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A. K. Topczak

A. K. Topczak appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

4 published item(s)

preprint2013arXiv

Probing exciton interaction with a spatially defined charge accumulation layer in the organic semiconductor Diindenoperylene

We present an investigation of the microscopic interplay between excitons and charge carriers by means of combined photoluminescence (PL) and charge carrier transport measurements on organic thin film transistors (OTFT). For this purpose, the prototypical organic semiconductor Diindenoperylene (DIP) was utilized as active material. The OTFT accumulation layer provides a spatially defined interaction zone for charges and photo-generated excitons leading to a PL intensity reduction of up to 4.5%. This effect correlates with the accumulated hole carrier density and provides a lower estimate of about 1.3E-10 cm3/s for the cross-section of non-radiative exciton-hole processes. It is rationalized that these processes are preferentially mediated by trapped holes.

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preprint2013arXiv

Probing the local structural order of C60 thin films by their exciton transport characteristics

We investigate effects of the local structure on the excitonic transport in C60 thin films by means of temperature-dependent photoluminescence quenching studies in a range of 5 to 300 K. Exciton motion in the X-ray amorphous layers indicates thermally activated transport initiated above 80 K accompanied by a thermalization of excitations into low lying states within the excitonic density of states. Discontinuities in the temperature-dependent photoluminescence behavior can be attributed to a continuous phase transition at 80 K and a first order phase transition at 180 K, thereby revealing structural information on the local film morphology in the C60 films.

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preprint2012arXiv

Investigation of exciton transport in crystalline thin-films of the organic semiconductor di-indeno-perylene using photoluminescence analyses

The exciton transport in the prototypical organic semiconductor Di-Indeno-Perylene (DIP) has been investigated by means of photoluminescence (PL) quenching and interpreted by an advanced exciton diffusion model including interference effects, quencher penetration as well as non-perfect exciton quenching. X-ray difraction revealed a correlation between the exciton diffusion length of about 90 nm and the structural coherence length of the DIP layers. Temperature dependent studies in a range of 5 - 300 K indicated an incoherent exciton transport above 80 K at activation energies of 10 - 20 meV related to the thickness dependent gradient of exciton density. Below 80 K a coherent exciton transport can be observed by the reduced phonon-interaction at cryogenic temperatures. This manuscript is a pre-final version.

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preprint2012arXiv

Thickness dependent effects of an intermediate molecular blocking layer on the optoelectronic characteristics of organic bilayer photovoltaic cells

In this work we address the microscopic effects related to the implementation of a Bathophenanthroline (BPhen) exciton blocking layer (EBL) sandwiched between Ag cathode and molecular Diindenoperylene (DIP)/C60 bilayer of a photovoltaic cell. Complementary studies of current density, external quantum efficiency, and photoluminescence quenching for EBL thicknesses up to 50 nm indicate that Ag atoms are able to penetrate through the whole 35 nm thick C60 film into the crystalline DIP layer underneath, thereby enhancing exciton quenching if no blocking layer is applied. In contrast, an optimal trade-off between exciton blocking, suppression of metal penetration and electron transport is achieved for a 5 nm thick BPhen layer yielding an improvement of power conversion efficiency by more than a factor of 2.

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