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W. Bao

W. Bao appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-concond-mat.str-elcond-mat.quant-gasquant-ph

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Published work

21 published item(s)

preprint2016arXiv

Nano-optical imaging of WSe2 waveguide modes revealing light-exciton interactions

We report on nano-optical imaging study of WSe2 thin flakes with the scanning near-field optical microscopy (NSOM). The NSOM technique allows us to visualize in real space various waveguide photon modes inside WSe2. By tuning the excitation laser energy, we are able to map the entire dispersion of these waveguide modes both above and below the A exciton energy of WSe2. We found that all the modes interact strongly with WSe2 excitons. The outcome of the interaction is that the observed waveguide modes shift to higher momenta right below the A exciton energy. At higher energies, on the other hand, these modes are strongly damped due to adjacent B excitons or band edge absorptions. The mode-shifting phenomena are consistent with polariton formation in WSe2.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Hubbard model for atomic impurities bound by the vortex lattice of a rotating BEC

We investigate cold bosonic impurity atoms trapped in a vortex lattice formed by condensed bosons of another species. We describe the dynamics of the impurities by a bosonic Hubbard model containing occupation-dependent parameters to capture the effects of strong impurity-impurity interactions. These include both a repulsive direct interaction and an attractive effective interaction mediated by the BEC. The occupation dependence of these two competing interactions drastically affects the Hubbard model phase diagram, including causing the disappearance of some Mott lobes

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Tunneling Plasmonics in Bilayer Graphene

We report experimental signatures of plasmonic effects due to electron tunneling between adjacent graphene layers. At sub-nanometer separation, such layers can form either a strongly coupled bilayer graphene with a Bernal stacking or a weakly coupled double-layer graphene with a random stacking order. Effects due to interlayer tunneling dominate in the former case but are negligible in the latter. We found through infrared nano-imaging that bilayer graphene supports plasmons with a higher degree of confinement compared to single- and double-layer graphene, a direct consequence of interlayer tunneling. Moreover, we were able to shut off plasmons in bilayer graphene through gating within a wide voltage range. Theoretical modeling indicates that such a plasmon-off region is directly linked to a gapped insulating state of bilayer graphene: yet another implication of interlayer tunneling. Our work uncovers essential plasmonic properties in bilayer graphene and suggests a possibility to achieve novel plasmonic functionalities in graphene few-layers.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Structure determination and coexistence of superconductivity and antiferromagnetic order in (Li0.8Fe0.2)OHFeSe

FeSe-derived superconductors show some unique behaviors relative to iron-pnictide superconductors, which are very helpful to understand the mechanism of superconductivity in high-Tc iron-based superconductors. The low-energy electronic structure of the heavily electron-doped AxFe2Se2 (A=K, Rb, Cs) demonstrates that interband scattering or Fermi surface nesting is not a necessary ingredient for the unconventional superconductivity in iron-based superconductors. The superconducting transition temperature (Tc) in the one-unit-cell FeSe on SrTiO3 substrate can reach as high as ~65 K, largely transcending the bulk Tc of all known iron-based superconductors. However, in the case of AxFe2Se2, the inter-grown antiferromagnetic insulating phase makes it difficult to study the underlying physics. Superconductors of alkali metal ions and NH3 molecules or organic-molecules intercalated FeSe and single layer or thin film FeSe on SrTiO3 substrate are extremely air-sensitive, which prevents the further investigation of their physical properties. Therefore, it is urgent to find a stable and accessible FeSe-derived superconductor for physical property measurements so as to study the underlying mechanism of superconductivity. Here, we report the air-stable superconductor (Li0.8Fe0.2)OHFeSe with high temperature superconductivity at ~40 K synthesized by a novel hydrothermal method. The crystal structure is unambiguously determined by the combination of X-ray and neutron powder diffraction and nuclear magnetic resonance. It is also found that an antiferromagnetic order coexists with superconductivity in such new FeSe-derived superconductor. This novel synthetic route opens a new avenue for exploring other superconductors in the related systems. The combination of different structure characterization techniques helps to complementarily determine and understand the details of the complicated structures.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Thin film barristor: a gate tunable vertical graphene-pentacene device

We fabricate a vertical thin-film barristor device consisting of highly doped silicon (gate), 300 nm SiO2 (gate dielectric), monolayer graphene, pentacene, and a gold top electrode. We show that the current across the device is modulated by the Fermi energy level of graphene, tuned with an external gate voltage. We interpret the device current within the thermionic emission theory, showing a modulation of the energy barrier between graphene and pentacene as large as 300meV.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Gate-tuning of graphene plasmons revealed by infrared nano-imaging

Surface plasmons are collective oscillations of electrons in metals or semiconductors enabling confinement and control of electromagnetic energy at subwavelength scales. Rapid progress in plasmonics has largely relied on advances in device nano-fabrication, whereas less attention has been paid to the tunable properties of plasmonic media. One such medium-graphene-is amenable to convenient tuning of its electronic and optical properties with gate voltage. Through infrared nano-imaging we explicitly show that common graphene/SiO2/Si back-gated structures support propagating surface plasmons. The wavelength of graphene plasmons is of the order of 200 nm at technologically relevant infrared frequencies, and they can propagate several times this distance. We have succeeded in altering both the amplitude and wavelength of these plasmons by gate voltage. We investigated losses in graphene using plasmon interferometry: by exploring real space profiles of plasmon standing waves formed between the tip of our nano-probe and edges of the samples. Plasmon dissipation quantified through this analysis is linked to the exotic electrodynamics of graphene. Standard plasmonic figures of merits of our tunable graphene devices surpass that of common metal-based structures.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Quantum transport in double-gated graphene devices

Double-gated graphene devices provide an important platform for understanding electrical and optical properties of graphene. Here we present transport measurements of single layer, bilayer and trilayer graphene devices with suspended top gates. In zero magnetic fields, we observe formation of pnp junctions with tunable polarity and charge densities, as well as a tunable band gap in bilayer graphene and a tunable band overlap in trilayer graphene. In high magnetic fields, the devices' conductance are quantized at integer and fractional values of conductance quantum, and the data are in good agreement with a model based on edge state equilibration at pn interfaces.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Stacking-Dependent Band Gap and Quantum Transport in Trilayer Graphene

In a multi-layer electronic system, stacking order provides a rarely-explored degree of freedom for tuning its electronic properties. Here we demonstrate the dramatically different transport properties in trilayer graphene (TLG) with different stacking orders. At the Dirac point, ABA-stacked TLG remains metallic while the ABC counterpart becomes insulating. The latter exhibits a gap-like dI/dV characteristics at low temperature and thermally activated conduction at higher temperatures, indicating an intrinsic gap ~6 meV. In magnetic fields, in addition to an insulating state at filling factor ν=0, ABC TLG exhibits quantum Hall plateaus at ν=-30, \pm 18, \pm 9, each of which splits into 3 branches at higher fields. Such splittings are signatures of the Lifshitz transition induced by trigonal warping, found only in ABC TLG, and in semi-quantitative agreement with theory. Our results underscore the rich interaction-induced phenomena in trilayer graphene with different stacking orders, and its potential towards electronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Breathing oscillations of a trapped impurity in a Bose gas

Motivated by a recent experiment [J. Catani et al., arXiv:1106.0828v1 preprint, 2011], we study breathing oscillations in the width of a harmonically trapped impurity interacting with a separately trapped Bose gas. We provide an intuitive physical picture of such dynamics at zero temperature, using a time-dependent variational approach. In the Gross-Pitaevskii regime we obtain breathing oscillations whose amplitudes are suppressed by self trapping, due to interactions with the Bose gas. Introducing phonons in the Bose gas leads to the damping of breathing oscillations and non-Markovian dynamics of the width of the impurity, the degree of which can be engineered through controllable parameters. Our results reproduce the main features of the impurity dynamics observed by Catani et al. despite experimental thermal effects, and are supported by simulations of the system in the Gross-Pitaevskii regime. Moreover, we predict novel effects at lower temperatures due to self-trapping and the inhomogeneity of the trapped Bose gas.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Friedel-like Oscillations from Interstitial Iron in Superconducting Fe1+yTe0.62Se0.38

Using polarized and unpolarized neutron scattering we show that interstitial Fe in superconducting Fe_{1+y}Te_{1-x}Se_x induces a magnetic Friedel-like oscillation that diffracts at Q_(in-plane)=(1/2,0) and involves >50 neighboring Fe sites. The interstitial >2 mu_B moment is surrounded by compensating ferromagnetic four spin clusters that may seed double stripe ordering in Fe_{1+y}Te. A semi-metallic 5-band model with (1/2,1/2) Fermi surface nesting and four fold symmetric super-exchange between interstitial Fe and two in-plane nearest neighbors largely accounts for the observed diffraction.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Transport Spectroscopy of Symmetry-Broken Insulating States in Bilayer Graphene

The flat bands in bilayer graphene(BLG) are sensitive to electric fields E\bot directed between the layers, and magnify the electron-electron interaction effects, thus making BLG an attractive platform for new two-dimensional (2D) electron physics[1-5]. Theories[6-16] have suggested the possibility of a variety of interesting broken symmetry states, some characterized by spontaneous mass gaps, when the electron-density is at the carrier neutrality point (CNP). The theoretically proposed gaps[6,7,10] in bilayer graphene are analogous[17,18] to the masses generated by broken symmetries in particle physics and give rise to large momentum-space Berry curvatures[8,19] accompanied by spontaneous quantum Hall effects[7-9]. Though recent experiments[20-23] have provided convincing evidence of strong electronic correlations near the CNP in BLG, the presence of gaps is difficult to establish because of the lack of direct spectroscopic measurements. Here we present transport measurements in ultra-clean double-gated BLG, using source-drain bias as a spectroscopic tool to resolve a gap of ~2 meV at the CNP. The gap can be closed by an electric field E\bot \sim13 mV/nm but increases monotonically with a magnetic field B, with an apparent particle-hole asymmetry above the gap, thus providing the first mapping of the ground states in BLG.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

From (pi, 0) magnetic order to superconductivity with (pi, pi) magnetic resonance in Fe1.02(Te1-xSex)

The iron chalcogenide Fe1+y(Te1-xSex) is structurally the simplest of the Fe-based superconductors. Although the Fermi surface is similar to iron pnictides, the parent compound Fe1+yTe exhibits antiferromagnetic order with in-plane magnetic wave-vector (pi, 0). This contrasts the pnictide parent compounds where the magnetic order has an in-plane magnetic wave-vector (pi, pi) that connects hole and electron parts of the Fermi surface. Despite these differences, both the pnictide and chalcogenide Fe-superconductors exhibit superconducting spin resonances around (pi, pi), suggesting a common symmetry for their superconducting order parameter. A central question in this burgeoning field is therefore how (pi, pi) superconductivity can emerge from a (pi, 0) magnetic instability. Here, we report that the magnetic soft mode evolving from the (pi, 0)-type magnetic long-range order is associated with weak charge carrier localization. Bulk superconductivity occurs only as the magnetic mode at (pi, pi) becomes dominant upon doping. Our results suggest a common magnetic origin for superconductivity in iron chalcogenide and pnictide superconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Imaging charge density fluctuations in graphene using Coulomb blockade spectroscopy

Using scanning tunneling microscopy, we have imaged local charge density fluctuations in monolayer graphene. By placing a small gold nanoparticle on the end of the STM tip, a charge sensor is created. By raster scanning the tip over the surface and using Coulomb blockade spectroscopy, we map the local charge on the graphene. We observe a series of electron and hole doped puddles with a characteristic length scale of about 20 nm. Theoretical calculations for the correlation length of the puddles based on the number of impurities are in agreement with our measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Lithography-free Fabrication of High Quality Substrate-supported and Freestanding Graphene devices

We present a lithography-free technique for fabrication of clean, high quality graphene devices. This technique is based on evaporation through hard Si shadow masks, and eliminates contaminants introduced by lithographical processes. We demonstrate that devices fabricated by this technique have significantly higher mobility values than those by standard electron beam lithography. To obtain ultra-high mobility devices, we extend this technique to fabricate suspended graphene samples with mobility as high as 120,000 cm^2/Vs.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

The Effect of Cluster Formation on Graphene Mobility

We investigate the effect of gold (Au) atoms in the form of both point-like charged impurities and clusters on the transport properties of graphene. Cryogenic deposition (18 K) of Au decreases the mobility and shifts the Dirac point in a manner that is consistent with scattering from point-like charged impurities. Increasing the temperature to room temperature promotes the formation of clusters, which is verified with atomic force microscopy. We find that for a fixed amount of Au impurities, the formation of clusters enhances the mobility and causes the Dirac point to shift back towards zero.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Electrical Detection of Spin Precession in Single Layer Graphene Spin Valves with Transparent Contacts

Spin accumulation and spin precession in single-layer graphene are studied by non-local spin valve measurements at room temperature. The dependence of the non-local magnetoresistance on electrode spacing is investigated and the results indicate a spin diffusion length of ~1.6 microns and a spin injection/detection efficiency of 0.013. Electrical detection of the spin precession confirms that the non-local signal originates from spin injection and transport. Fitting of the Hanle spin precession data yields a spin relaxation time of ~84 ps and a spin diffusion length of ~1.5 microns, which is consistent with the value obtained through the spacing dependence.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Electron-Hole Asymmetry of Spin Injection and Transport in Single-Layer Graphene

Spin-dependent properties of single-layer graphene (SLG) have been studied by non-local spin valve measurements at room temperature. Gate voltage dependence shows that the non-local magnetoresistance (MR) is proportional to the conductivity of the SLG, which is the predicted behavior for transparent ferromagnetic/nonmagnetic contacts. While the electron and hole bands in SLG are symmetric, gate voltage and bias dependence of the non-local MR reveal an electron-hole asymmetry in which the non-local MR is roughly independent of bias for electrons, but varies significantly with bias for holes.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Electronic Doping and Scattering by Transition Metals on Graphene

We investigate the effects of transition metals (TM) on the electronic doping and scattering in graphene using molecular beam epitaxy combined with in situ transport measurements. The room temperature deposition of TM onto graphene produces clusters that dope n-type for all TM investigated (Ti, Fe, Pt). We also find that the scattering by TM clusters exhibits different behavior compared to 1/r Coulomb scattering. At high coverage, Pt films are able to produce doping that is either n-type or weakly p-type, which provides experimental evidence for a strong interfacial dipole favoring n-type doping as predicted theoretically.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Incommensurate itinerant antiferromagnetic excitations and spin resonance in the FeTe$_{0.6}$Se$_{0.4}$ superconductor

We report on inelastic neutron scattering measurements that find incommensurate itinerant like magnetic excitations in the normal state of superconducting FeTe$_{0.6}$Se$_{0.4}$ (\Tc=14K) at wave-vector $\mathbf{Q}_{inc}=(1/2\pmε,1/2\mpε)$ with $ε$=0.09(1). In the superconducting state only the lower energy part of the spectrum shows significant changes by the formation of a gap and a magnetic resonance that follows the dispersion of the normal state excitations. We use a four band model to describe the Fermi surface topology of iron-based superconductors with the extended $s(\pm)$ symmetry and find that it qualitatively captures the salient features of these data.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Mapping the Dirac point in gated bilayer graphene

We have performed low temperature scanning tunneling spectroscopy measurements on exfoliated bilayer graphene on SiO2. By varying the back gate voltage we observed a linear shift of the Dirac point and an opening of a band gap due to the perpendicular electric field. In addition to observing a shift in the Dirac point, we also measured its spatial dependence using spatially resolved scanning tunneling spectroscopy. The spatial variation of the Dirac point was not correlated with topographic features and therefore we attribute its shift to random charged impurities.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Spatial mapping of the Dirac point in monolayer and bilayer graphene

We have mapped the Dirac point in exfoliated monolayer and bilayer graphene using spatially resolved scanning tunneling spectroscopy (STS) measurements at low temperature. The Dirac point shifts in energy at different locations in graphene. However, a cross correlation with the topography shows no correlation indicating that topographic features such as ripples are not the primary source of the variation. Rather, we attribute the shift of the Dirac point to random charged impurities located near the graphene. Our findings emphasize the need to advance exfoliated graphene sample preparation to minimize the effect of impurities.

0 citations0 reviewsNo code linkedOpen access