Researcher profile

W. Bao

W. Bao contributes to research discovery and scholarly infrastructure.

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Published work

9 published item(s)

preprint2010arXiv

From (pi, 0) magnetic order to superconductivity with (pi, pi) magnetic resonance in Fe1.02(Te1-xSex)

The iron chalcogenide Fe1+y(Te1-xSex) is structurally the simplest of the Fe-based superconductors. Although the Fermi surface is similar to iron pnictides, the parent compound Fe1+yTe exhibits antiferromagnetic order with in-plane magnetic wave-vector (pi, 0). This contrasts the pnictide parent compounds where the magnetic order has an in-plane magnetic wave-vector (pi, pi) that connects hole and electron parts of the Fermi surface. Despite these differences, both the pnictide and chalcogenide Fe-superconductors exhibit superconducting spin resonances around (pi, pi), suggesting a common symmetry for their superconducting order parameter. A central question in this burgeoning field is therefore how (pi, pi) superconductivity can emerge from a (pi, 0) magnetic instability. Here, we report that the magnetic soft mode evolving from the (pi, 0)-type magnetic long-range order is associated with weak charge carrier localization. Bulk superconductivity occurs only as the magnetic mode at (pi, pi) becomes dominant upon doping. Our results suggest a common magnetic origin for superconductivity in iron chalcogenide and pnictide superconductors.

preprint2010arXiv

Lithography-free Fabrication of High Quality Substrate-supported and Freestanding Graphene devices

We present a lithography-free technique for fabrication of clean, high quality graphene devices. This technique is based on evaporation through hard Si shadow masks, and eliminates contaminants introduced by lithographical processes. We demonstrate that devices fabricated by this technique have significantly higher mobility values than those by standard electron beam lithography. To obtain ultra-high mobility devices, we extend this technique to fabricate suspended graphene samples with mobility as high as 120,000 cm^2/Vs.

preprint2010arXiv

The Effect of Cluster Formation on Graphene Mobility

We investigate the effect of gold (Au) atoms in the form of both point-like charged impurities and clusters on the transport properties of graphene. Cryogenic deposition (18 K) of Au decreases the mobility and shifts the Dirac point in a manner that is consistent with scattering from point-like charged impurities. Increasing the temperature to room temperature promotes the formation of clusters, which is verified with atomic force microscopy. We find that for a fixed amount of Au impurities, the formation of clusters enhances the mobility and causes the Dirac point to shift back towards zero.

preprint2009arXiv

Electrical Detection of Spin Precession in Single Layer Graphene Spin Valves with Transparent Contacts

Spin accumulation and spin precession in single-layer graphene are studied by non-local spin valve measurements at room temperature. The dependence of the non-local magnetoresistance on electrode spacing is investigated and the results indicate a spin diffusion length of ~1.6 microns and a spin injection/detection efficiency of 0.013. Electrical detection of the spin precession confirms that the non-local signal originates from spin injection and transport. Fitting of the Hanle spin precession data yields a spin relaxation time of ~84 ps and a spin diffusion length of ~1.5 microns, which is consistent with the value obtained through the spacing dependence.

preprint2009arXiv

Electron-Hole Asymmetry of Spin Injection and Transport in Single-Layer Graphene

Spin-dependent properties of single-layer graphene (SLG) have been studied by non-local spin valve measurements at room temperature. Gate voltage dependence shows that the non-local magnetoresistance (MR) is proportional to the conductivity of the SLG, which is the predicted behavior for transparent ferromagnetic/nonmagnetic contacts. While the electron and hole bands in SLG are symmetric, gate voltage and bias dependence of the non-local MR reveal an electron-hole asymmetry in which the non-local MR is roughly independent of bias for electrons, but varies significantly with bias for holes.

preprint2009arXiv

Electronic Doping and Scattering by Transition Metals on Graphene

We investigate the effects of transition metals (TM) on the electronic doping and scattering in graphene using molecular beam epitaxy combined with in situ transport measurements. The room temperature deposition of TM onto graphene produces clusters that dope n-type for all TM investigated (Ti, Fe, Pt). We also find that the scattering by TM clusters exhibits different behavior compared to 1/r Coulomb scattering. At high coverage, Pt films are able to produce doping that is either n-type or weakly p-type, which provides experimental evidence for a strong interfacial dipole favoring n-type doping as predicted theoretically.

preprint2009arXiv

Incommensurate itinerant antiferromagnetic excitations and spin resonance in the FeTe$_{0.6}$Se$_{0.4}$ superconductor

We report on inelastic neutron scattering measurements that find incommensurate itinerant like magnetic excitations in the normal state of superconducting FeTe$_{0.6}$Se$_{0.4}$ (\Tc=14K) at wave-vector $\mathbf{Q}_{inc}=(1/2\pmε,1/2\mpε)$ with $ε$=0.09(1). In the superconducting state only the lower energy part of the spectrum shows significant changes by the formation of a gap and a magnetic resonance that follows the dispersion of the normal state excitations. We use a four band model to describe the Fermi surface topology of iron-based superconductors with the extended $s(\pm)$ symmetry and find that it qualitatively captures the salient features of these data.

preprint2009arXiv

Mapping the Dirac point in gated bilayer graphene

We have performed low temperature scanning tunneling spectroscopy measurements on exfoliated bilayer graphene on SiO2. By varying the back gate voltage we observed a linear shift of the Dirac point and an opening of a band gap due to the perpendicular electric field. In addition to observing a shift in the Dirac point, we also measured its spatial dependence using spatially resolved scanning tunneling spectroscopy. The spatial variation of the Dirac point was not correlated with topographic features and therefore we attribute its shift to random charged impurities.

preprint2009arXiv

Spatial mapping of the Dirac point in monolayer and bilayer graphene

We have mapped the Dirac point in exfoliated monolayer and bilayer graphene using spatially resolved scanning tunneling spectroscopy (STS) measurements at low temperature. The Dirac point shifts in energy at different locations in graphene. However, a cross correlation with the topography shows no correlation indicating that topographic features such as ripples are not the primary source of the variation. Rather, we attribute the shift of the Dirac point to random charged impurities located near the graphene. Our findings emphasize the need to advance exfoliated graphene sample preparation to minimize the effect of impurities.