Researcher profile

W. B. Wu

W. B. Wu contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2015arXiv

Raman and fluorescence characteristics of resonant inelastic X-ray scattering from doped superconducting cuprates

Measurements of spin excitations are essential for an understanding of spin-mediated pairing for superconductivity; and resonant inelastic X-ray scattering (RIXS) provides a considerable opportunity to probe high-energy spin excitations. However, whether RIXS correctly measures the collective spin excitations of doped superconducting cuprates remains under debate. Here we demonstrate distinct Raman- and fluorescence-like RIXS excitations of Bi$_{1.5}$Pb$_{0.6}$Sr$_{1.54}$CaCu$_{2}$O$_{8+δ}$ in the mid-infrared energy region. Combining photon-energy and momentum dependent RIXS measurements with theoretical calculations using exact diagonalization provides conclusive evidence that the Raman-like RIXS excitations correspond to collective spin excitations, which are magnons in the undoped Mott insulators and evolve into paramagnons in doped superconducting compounds. In contrast, the fluorescence-like shifts are due primarily to the continuum of particle-hole excitations in the charge channel. Our results show that under the proper experimental conditions RIXS indeed can be used to probe paramagnons in doped high-$T_c$ cuprate superconductors.

preprint2013arXiv

Heteroepitaxial Growth and Multiferroic Properties of Mn-doped BiFeO3 films on SrTiO3 buffered III-V Semiconductor GaAs

Epitaxial Mn-doped BiFeO3 (MBFO) thin films were grown on GaAs (001) substrate with SrTiO3 (STO) buffer layer by pulsed laser deposition. X-ray diffraction results demonstrate that the films show pure (00l) orientation, and MBFO(100)//STO(100), whereas STO (100)//GaAs (110). Piezoresponse force microscopy images and polarization versus electric field loops indicate that the MBFO films grown on GaAs have an effective ferroelectric switching. The MBFO films exhibit good ferroelectric behavior (2Pr ~ 92 μC/cm2 and 2EC ~ 372 kV/cm). Ferromagnetic property with saturated magnetization of 6.5 emu/cm3 and coercive field of about 123 Oe is also found in the heterostructure at room temperature.

preprint2013arXiv

Signatures of electronic phase separation in the Hall effect of anisotropically strained La0.67Ca0.33MnO3 films

Systematic transport measurements have been performed on a series of La0.67Ca0.33MnO3 (LCMO) thin films with varying degrees of anisotropic strain. The strain is induced via epitaxial growth on NdGaO3(001) substrates and varied by controlling the thermal annealing time. An antiferromagnetic insulating (AFI) state, possibly associated with charge ordering, emerges upon thermal annealing. The Hall effect in these materials exhibits features that are indicative of a percolative phase transition and correlate closely with the emergence of the AFI state. In the paramagnetic phase, the Hall resistivity takes on two slopes in all samples: a decreasing negative slope with increasing temperature at low fields, which is attributed to the carrier hopping motion, and an almost temperature independent positive slope at high fields due to diffusive transport of holes. Significantly, the crossover fields of the Hall resistivity slope at different temperatures correspond to the same magnetization, which is interpreted as the critical point of a magnetic field-driven percolative phase transition. At lower temperatures near the zero-field metal-insulator transition, pronounced enhancement of the Hall coefficient with the development of the AFI state is observed. The enhancement peaks near the magnetic field-driven percolation; its magnitude correlates with the strength of the AFI state and is suppressed with the melting of the AFI state by an in-plane magnetic field. The observations resemble many features of the enhancement of the Hall coefficient in granular metal films near the composition-driven percolation.

preprint2009arXiv

Interface Ferromagnetism in (110)-Oriented La0.7Sr0.3MnO3/SrTiO3 Ultrathin Superlattices

We explore manganite interface magnetism in epitaxially grown La0.7Sr0.3MnO3(LSMO)/SrTiO3 ultrathin superlattices (SL) along (110) orientation. we show that robust ferromagnetism persists down to four monolayers LSMO(MLs) (~1.1 nm in thickness), of which 50% Mn is at the interface state. Above eight MLs, the magnetic moment is nearly saturated to the theoretical value of 3.7u_B, with an estimated interface moment of 3.2u_B. In comparison to (100)-oriented SLs which were previously shown to have a spin canted ground state, (110)-oriented SLs exhibit stronger low-dimensional ferromagnetism and better metallicity, suggesting a ferromagnetic interface spin state well suited for all-oxide spintronic devices. The underlining mechanism is qualitatively discussed.