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Vyacheslav G. Storchak

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Published work

9 published item(s)

preprint2016arXiv

Band Structure of EuO/Si Spin Contact: Justification for Silicon Spintronics

Silicon spintronics requires injection of spin-polarized carriers into Si. An emerging approach is direct electrical injection from a ferromagnetic semiconductor - EuO being the prime choice. Functionality of the EuO/Si spin contact is determined by the interface band alignment. In particular, the band offset should fall within the 0.5-2 eV range. We employ soft-X-ray ARPES to probe the electronic structure of the buried EuO/Si interface with momentum resolution and chemical specificity. The band structure reveals a conduction band offset of 1.0 eV attesting the technological potential of the EuO/Si system.

preprint2016arXiv

Coupling of Magnetic Orders in La2CuO4+x

High transverse magnetic field and zero field muon spin rotation and relaxation measurements have been carried out in a lightly oxygen-doped high-Tc parent compound La2CuO4 in a temperature range from 2 K to 300 K. As in the stoichiometric compound, muon spin rotation spectra reveal, along with the antiferromagnetic local field, the presence of an additional source of magnetic field at the muon. The results indicate that this second magnetic order is driven by the antiferromagnetism at low temperature but the two magnetic orders decouple at higher temperature. The ability of muSR to detect this additional magnetism deteriorates with doping, thus rendering the technique impotent to reveal time-reversal symmetry breaking in superconductors.

preprint2015arXiv

High-Resolution X-Ray Studies of the Direct Spin Contact of EuO with Silicon

Ferromagnetic semiconductor europium monoxide (EuO) is believed to be an effective spin injector when directly integrated with silicon. Injection through spin-selective ohmic contact requires superb structural quality of the interface EuO/Si. Recent breakthrough in manufacturing free-of-buffer-layer EuO/Si junctions calls for structural studies of the interface between the semiconductors. Ex situ high-resolution X-ray diffraction and reflectivity accompanied by in situ reflection high-energy electron diffraction reveal direct coupling at the interface. A combined analysis of XRD and XRR data provides a common structural model. The structural quality of the EuO/Si spin contact by far exceeds that of previous reports and thus makes a step forward to the ultimate goals of spintronics.

preprint2014arXiv

Comment on "Understanding the $μ$SR spectra of MnSi without magnetic polarons"

Amato {\it et al.} have reported transverse field muon spin rotation experiments performed on single crystal of MnSi in a single magnetic field of 5200 Oe at a single temperature of 50 K. They present the angular dependence of the muon precession frequencies which they interpret in terms of dipolar magnetic field experienced by bare muons. Such interpretation comes from a rather mechanistic approach without plausible physical backing: the wealth of experimental data collected so far does not justify this oversimplification. %approach. No consideration is given to a fundamental feature of MnSi --- strong magnetic field inhomogeneities on the scale of a lattice spacing found by many different techniques. The computational procedure also raises a number of objections, in particular, applicability of Kohn-Sham DFT to strongly correlated systems like MnSi. We demonstrate that the conclusion of "Understanding the $μ$SR spectra of MnSi without magnetic polarons" is premature.

preprint2014arXiv

Direct epitaxial integration of the ferromagnetic semiconductor EuO with silicon for spintronic applications

Materials in which charge and spin degrees of freedom interact strongly offer applications known as spintronics. Following a remarkable success of metallic spintronics based on the giant-magnetoresistive effect, tremendous efforts have been invested into the less developed semiconductor spintronics, in particular, with the aim to produce three-terminal spintronic devices, e.g. spin transistors. One of the most important prerequisites for such a technology is an effective injection of spin-polarized carriers from a ferromagnetic semiconductor into a nonmagnetic semiconductor, preferably one of those currently used for industrial applications such as Si - a workhorse of modern electronics. Ferromagnetic semiconductor EuO is long believed to be the best candidate for integration of magnetic semiconductor with Si. Although EuO proved to offer optimal conditions for effective spin injection into silicon and in spite of considerable efforts, the direct epitaxial stabilization of stoichiometric EuO thin films on Si without any buffer layer has not been demonstrated to date. Here we report a new technique for control of EuO/Si interface on submonolayer level which may have general implications for the growth of functional oxides on Si. Using this technique we solve a long-standing problem of direct epitaxial growth on silicon of thin EuO films which exhibit structural and magnetic properties of EuO bulk material. This result opens up new possibilities in developing all-semiconductor spintronic devices.

preprint2014arXiv

Intra-unit-cell Magnetic Order in Stoichiometric La$_2$CuO$_4$

Muon spin rotation measurements supported by magnetization experiments have been carried out in a stoichiometric high-$T_c$ parent compound La$_2$CuO$_4$ in %the a temperature range from 2~K to 340~K and in transverse magnetic fields up to 5~T. Along with the antiferromagnetic local field, muon spin rotation spectra indicate presence of an additional source of magnetic field on the muon. The characteristic splitting of about 45~G coming from this additional magnetic field is consistent with spontaneous circulating currents model of Varma.

preprint2014arXiv

Spin-polaron band of heavy carriersin the heavy-fermion ferromagnetic superconductor UGe2

In strongly correlated materials, cooperative behavior of the electrons causes a variety of quantum ordered states that may, in some cases, coexist. It has long been believed, however, that such coexistence among ferromagnetic ordering, superconductivity and heavy-fermion behavior is impossible, as the first supports parallel spin alignment while the conventional understanding of the latter two phenomena assumes spin-singlet or anti-parallel spins. This understanding has recently been challenged by an increasing number of observations in uranium systems (UGe2, URhGe, UIr and UCoGe) in which superconductivity is found within a ferromagnetic state and, more fundamentally, both ordering phenomena are exhibited by the same set of heavy 5f electrons. Since the coexistence of superconductivity and ferromagnetism is at odds with the standard theory of phonon-mediated spin-singlet superconductivity, it requires an alternative pairing mechanism, in which electrons are bound into spin-triplet pairs by spin fluctuations. Within the heavy-fermion scenario, this alternative mechanism assumes that the magnetism has a band character and that said band forms from heavy quasiparticles composed of f electrons. This band is expected to be responsible for all three phenomena although its nature and the nature of those heavy quasiparticles still remains unclear. Here we report spectroscopic evidence for the formation in UGe2 of subnanometer-sized spin polarons whose dynamics we follow into the paramagnetic and ferromagnetic phases. These spin polarons behave as heavy carriers and thus may serve as heavy quasiparticles made of 5f electrons; once coherence is established, they form a narrow spin-polaron band which thus provides a natural reconciliation of itinerant ferromagnetism with spin-triplet superconductivity and heavy-fermion behavior.

preprint2013arXiv

Spin Gap in Heavy Fermion UBe$_{13}$

Muon spin rotation ($μ^+$SR) experiments have been carried out in the heavy fermion compound UBe$_{13}$ in the temperature range from 0.025 K to 300 K and in magnetic fields up to 7 T, supported by resistivity and magnetization measurements. The $μ^+$SR spectra are characteristic of formation of a spin polaron which persists to the lowest temperature. A gap in the spin excitation spectrum of f-electrons opens up at about 180 K, consistent with anomalies discovered in resistivity, heat capacity, NMR and optical conductivity measurements of UBe$_{13}$.

preprint2010arXiv

Bound Magnetic Polarons in the 3d-electron Ferromagnetic Spinel Semiconductor CdCr$_2$Se$_4$

Muon spin rotation/relaxation spectroscopy %(supported by magnetization measurements) has been employed to study electron localization around a donor center - the positive muon - in the 3d magnetic spinel semiconductor CdCr$_2$Se$_4$ at temperatures from 2 to 300 K in magnetic fields up to 7 T. A bound state of an electron around a positive muon - a magnetic polaron - is detected far above the ferromagnetic transition up to 300 K. Electron localization into a magnetic polaron occurs due to its strong exchange interaction with the magnetic 3d electrons of local Cr$^{3+}$ ions, which confines its wave function within R\approx 0.3 nm, allowing significant overlap with both the nearest and next nearest shells of Cr ions.