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Vsevolod Ivanov

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Published work

6 published item(s)

preprint2026arXiv

Measurements of electronic band structure in CeCoGe$_3$ by angle-resolved photoemission spectroscopy

We report a comprehensive study of the electronic structure of CeCoGe$_3$ throughout the entire Brillouin zone in the non-magnetic regime using angle-resolved photoemission spectroscopy (ARPES). The electronic structure agrees in large part with first principles calculations, including predicted topological nodal lines. Two new features in the band structure are also observed: a surface state and folded bands, the latter which is argued to originate from a unit cell reconstruction.

preprint2022arXiv

Defect engineering of silicon with ion pulses from laser acceleration

Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon single crystals with ion pulses from a laser accelerator with ion flux levels up to 10^22 ions/cm^2/s. Low energy ions from plasma expansion of the laser-foil target are implanted near the surface and then diffuse into silicon samples that were locally pre-heated by high energy ions. We observe low energy ion fluences of ~10^16 cm^-2, about four orders of magnitude higher than the fluence of high energy (MeV) ions. In the areas of highest energy deposition, silicon crystals exfoliate from single ion pulses. Color centers, predominantly W and G-centers, form directly in response to ion pulses without a subsequent annealing step. We find that the linewidth of G-centers increase in areas with high ion flux much more than the linewidth of W-centers, consistent with density functional theory calculations of their electronic structure. Laser ion acceleration generates aligned pulses of high and low energy ions that expand the parameter range for defect engineering and doping of semiconductors with tunable balances of ion flux, damage rates and local heating.

preprint2021arXiv

Calculated Exchange Interactions and Sensitivity of Ni Two-Hole Spin State to Hund's Coupling in Doped NdNiO2

Using density functional based LDA+U method and linear-response theory, we study the magnetic exchange interactions of the superconductor Nd{1-x}Sr{x}NiO2. Our calculated nearest-neighbor exchange constant J1=82 meV is large, weakly affected by doping and is only slightly smaller than that found in the sister compound CaCuO2. We however find that the hole doping significantly enhances the inter--layer exchange coupling as it affects the magnetic moment of the Ni-3d{3z2-r2} orbital. This can be understood in terms of small hybridization of Ni-3d{3z2-r2} within the NiO2 plane which results in a flat band near the Fermi level, and its large overlap along z direction. We also demonstrate that the Nd-5d states appearing at the Fermi level, do not affect the magnetic exchange interactions, and thus may not participate in the superconductivity of this compound. Whereas many previous works emphasize the importance of the Ni-3d{x2-y2} and Nd-5d orbitals, we instead analyze the solution of Ni-3d{x2-y2}/Ni-3d{3z2-r2} minimal model using Dynamical Mean Field Theory. It reveals an underlying Mott insulating state which, depending on precise values of the intra--atomic Hund's coupling less or larger than 0.83 eV, selects upon doping either S=0 or S=1 two--hole states at low energies leading to very different quasiparticle band structures. We propose that trends upon doping in spin excitational spectrum and quasiparticle density of state can be a way to probe Ni 3d8 configuration.

preprint2020arXiv

Renormalized quasiparticles, topological monopoles and superconducting line nodes in heavy fermion CeTX$_3$ compounds

Non-centrosymmetric superconductors have recently attracted much attention, since the lack of inversion symmetry mixes spin singlet and triplet pairing states, which may allow the realization of topological superconductivity. In this work, we study the electronic properties of the family of inversion-broken CeTX$_3$ heavy-fermion superconductors, finding topological nodal lines as well as Dirac and Weyl points, which are renormalized closer to the Fermi energy by correlations. We find that the Weyl nodal lines have a substantial effect on the Fermi surface spin structure of the normal state, and lead to line nodes in the superconducting phase.

preprint2016arXiv

Magnetoelectric effect and phase transitions in CuO in external magnetic fields

Apart from being so far the only known binary multiferroic compound, CuO has a much higher transition temperature into the multiferroic state, 230 K, than any other known material in which the electric polarization is induced by spontaneous magnetic order, typically lower than 100 K. Although the magnetically induced ferroelectricity of CuO is firmly established, no magnetoelectric effect has been observed so far as direct crosstalk between bulk magnetization and electric polarization counterparts. Here we demonstrate that high magnetic fields of about 50 T are able to suppress the helical modulation of the spins in the multiferroic phase and dramatically affect the electric polarization. Furthermore, just below the spontaneous transition from commensurate (paraelectric) to incommensurate (ferroelectric) structures at 213 K, even modest magnetic fields induce a transition into the incommensurate structure and then suppress it at higher field. Thus, remarkable hidden magnetoelectric features are uncovered, establishing CuO as prototype multiferroic with abundance of competitive magnetic interactions.

preprint2014arXiv

Loops, sign structures and emergent Fermi statistics in three-dimensional quantum dimer models

We introduce and study three-dimensional quantum dimer models with positive resonance terms. We demonstrate that their ground state wave functions exhibit a nonlocal sign structure that can be exactly formulated in terms of loops, and as a direct consequence, monomer excitations obey Fermi statistics. The sign structure and Fermi statistics in these "signful" quantum dimer models can be naturally described by a parton construction, which becomes exact at the solvable point.