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Vladimir Il'yaschenko

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preprint2022arXiv

Mg2_2Si is the new black: introducing a black silicide with >>95% average absorption at 200-1800 nm wavelengths

Textured silicon surface structures, in particular black silicon (b-Si), open up possibilities for Si-based solar cells and photodetectors to be extremely thin and highly sensitive owing to perfect light-trapping and anti-reflection properties. However, near-infrared (NIR) performance of bare b-Si is limited by Si band gap of 1.12 eV or 1100 nm. This work reports a simple method to increase NIR absorption of b-Si by inin vacuovacuo silicidation with magnesium. Obtained Mg2_2Si/b-Si heterostructure has a complex geometry where b-Si nanocones are covered by Mg2_2Si shells and crowned with flake-like Mg2_2Si hexagons. Mg2_2Si formation atop b-Si resulted in 5-fold lower reflectivity and optical absorption to be no lower than 88\% over 200-1800 nm spectral range. More importantly, Mg2_2Si/b-Si heterostructure is more adjusted to match AM-1.5 solar spectrum with theoretically higher photogenerated current density. The maximal advantage is demonstrated in the NIR region compared to bare b-Si in full accordance with one's expectations about NIR sensitive narrow band gap (∼\sim0.75 eV) semiconductor with high absorption coefficient, which is Mg2_2Si. Results of optical simulation confirmed the superiority of Mg2_2Si/b-Si NIR performance. Therefore, this new wide-band optical absorber called black silicide proved rather competitive alongside state-of-the-art approaches to extend b-Si spectral blackness.

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