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Vladimir Bulovic

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Published work

3 published item(s)

preprint2022arXiv

Processing Induced Distinct Charge Carrier Dynamics of Bulky Organic Halide Treated Perovskites

State-of-the-art metal halide perovskite-based photovoltaics often employ organic ammonium salts, AX, as a surface passivator, where A is a large organic cation and X is a halide. These surface treatments passivate the perovskite by forming layered perovskites (e.g., A2PbX4) or by AX itself serving as a surface passivation agent on the perovskite photoactive film. It remains unclear whether layered perovskites or AX is the ideal passivator due to an incomplete understanding of the interfacial impact and resulting photoexcited carrier dynamics of AX treatment. In the present study, we use TRPL measurements to selectively probe the different interfaces of glass/perovskite/AX to demonstrate the vastly distinct interfacial photoexcited state dynamics with the presence of A2PbX4 or AX. Coupling the TRPL results with X-ray diffraction and nanoscale microscopy measurements, we find that the presence of AX not only passivates the traps at the surface and the grain boundaries, but also induces an α/δ-FAPbI3 phase mixing that alters the carrier dynamics near the glass/perovskite interface and enhances the photoluminescence quantum yield. In contrast, the passivation with A2PbI4 is mostly localized to the surface and grain boundaries near the top surface where the availability of PbI2 directly determines the formation of A2PbI4. Such distinct mechanisms significantly impact the corresponding solar cell performance, and we find AX passivation that has not been converted to a layered perovskite allows for a much larger processing window (e.g., larger allowed variance of AX concentration which is critical for improving the eventual manufacturing yield) and more reproducible condition to realize device performance improvements, while A2PbI4 as a passivator yields a much narrower processing window. We expect these results to enable a more rational route for developing AX for perovskite.

preprint2021arXiv

Accurate Determination of Semiconductor Diffusion Coefficient Using Optical Microscopy

Energy carrier transport and recombination in emerging semiconductors can be directly monitored with optical microscopy, leading to the measurement of the diffusion coefficient (D), a critical property for design of efficient optoelectronic devices. D is often determined by fitting a time-resolved expanding carrier profile after optical excitation using a Mean Squared Displacement (MSD) Model. Although this approach has gained widespread adoption, its utilization can significantly overestimate D due to the non-linear recombination processes that artificially broaden the carrier distribution profile. Here, we simulate diffusive processes in both excitonic and free carrier semiconductors and present revised MSD Models that take into account second-order (i.e. bimolecular) and third-order (i.e. Auger) processes to accurately recover D for various types of materials. For perovskite thin films, utilization of these models can reduce fitting error by orders of magnitude, especially for commonly deployed excitation conditions where carrier densities are > 5x10$^1$$^6$ cm$^-$$^3$. In addition, we show that commonly-deployed MSD Models are not well-suited for the study of films with microstructure, especially when boundary behavior is unknown and feature sizes are comparable to the diffusion length. Finally, we find that photon recycling only impacts energy carrier profiles on ultrashort time scales or for materials with fast radiative decay times. We present clear strategies to investigate energy transport in disordered materials for more effective design and optimization of electronic and optoelectronic devices.

preprint2015arXiv

Plexcitons: Dirac points and topological modes

Plexcitons are polaritonic modes that result from the strong coupling between excitons and plasmons. We consider plexcitons emerging from the interaction of excitons in an organic molecular layer with surface plasmons in a metallic film. We predict the emergence of Dirac cones in the two-dimensional bandstructure of plexcitons due to the inherent alignment of the excitonic transitions in the organic layer. These Dirac cones may open up in energy by simultaneously interfacing the metal with a magneto-optical layer and subjecting the whole system to a perpendicular magnetic field. The resulting energy gap becomes populated with topologically protected one-way modes which travel at the interface of this plexcitonic system. Our theoretical proposal suggests that plexcitons are a convenient and simple platform for the exploration of exotic phases of matter as well as of novel ways to direct energy flow at the nanoscale.