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Researcher profile

Dane W. deQuilettes

Dane W. deQuilettes contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.app-phquant-ph

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Published work

3 published item(s)

preprint2024arXiv

Emulated nuclear spin gyroscope with $^{15}$NV centers in diamond

Nuclear spins in solid-state platforms are promising for building rotation sensors due to their long coherence times. Among these platforms, nitrogen-vacancy centers have attracted considerable attention with ambient operating conditions. However, the current performance of NV gyroscopes remains limited by the degraded coherence when operating with large spin ensembles. Protecting the coherence of these systems requires a systematic study of the coherence decay mechanism. Here we present the use of nitrogen-15 nuclear spins of NV centers in building gyroscopes, benefiting from its simpler energy structure and vanishing nuclear quadrupole term compared with nitrogen-14 nuclear spins, though suffering from different challenges in coherence protection. We systematically reveal the coherence decay mechanism of the nuclear spin in different NV electronic spin manifolds and further develop a robust coherence protection protocol based on controlling the NV electronic spin only, achieving a 15-fold dephasing time improvement. With the developed coherence protection, we demonstrate an emulated gyroscope by measuring a designed rotation rate pattern, showing an order-of-magnitude sensitivity improvement.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Processing Induced Distinct Charge Carrier Dynamics of Bulky Organic Halide Treated Perovskites

State-of-the-art metal halide perovskite-based photovoltaics often employ organic ammonium salts, AX, as a surface passivator, where A is a large organic cation and X is a halide. These surface treatments passivate the perovskite by forming layered perovskites (e.g., A2PbX4) or by AX itself serving as a surface passivation agent on the perovskite photoactive film. It remains unclear whether layered perovskites or AX is the ideal passivator due to an incomplete understanding of the interfacial impact and resulting photoexcited carrier dynamics of AX treatment. In the present study, we use TRPL measurements to selectively probe the different interfaces of glass/perovskite/AX to demonstrate the vastly distinct interfacial photoexcited state dynamics with the presence of A2PbX4 or AX. Coupling the TRPL results with X-ray diffraction and nanoscale microscopy measurements, we find that the presence of AX not only passivates the traps at the surface and the grain boundaries, but also induces an α/δ-FAPbI3 phase mixing that alters the carrier dynamics near the glass/perovskite interface and enhances the photoluminescence quantum yield. In contrast, the passivation with A2PbI4 is mostly localized to the surface and grain boundaries near the top surface where the availability of PbI2 directly determines the formation of A2PbI4. Such distinct mechanisms significantly impact the corresponding solar cell performance, and we find AX passivation that has not been converted to a layered perovskite allows for a much larger processing window (e.g., larger allowed variance of AX concentration which is critical for improving the eventual manufacturing yield) and more reproducible condition to realize device performance improvements, while A2PbI4 as a passivator yields a much narrower processing window. We expect these results to enable a more rational route for developing AX for perovskite.

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preprint2021arXiv

Accurate Determination of Semiconductor Diffusion Coefficient Using Optical Microscopy

Energy carrier transport and recombination in emerging semiconductors can be directly monitored with optical microscopy, leading to the measurement of the diffusion coefficient (D), a critical property for design of efficient optoelectronic devices. D is often determined by fitting a time-resolved expanding carrier profile after optical excitation using a Mean Squared Displacement (MSD) Model. Although this approach has gained widespread adoption, its utilization can significantly overestimate D due to the non-linear recombination processes that artificially broaden the carrier distribution profile. Here, we simulate diffusive processes in both excitonic and free carrier semiconductors and present revised MSD Models that take into account second-order (i.e. bimolecular) and third-order (i.e. Auger) processes to accurately recover D for various types of materials. For perovskite thin films, utilization of these models can reduce fitting error by orders of magnitude, especially for commonly deployed excitation conditions where carrier densities are > 5x10$^1$$^6$ cm$^-$$^3$. In addition, we show that commonly-deployed MSD Models are not well-suited for the study of films with microstructure, especially when boundary behavior is unknown and feature sizes are comparable to the diffusion length. Finally, we find that photon recycling only impacts energy carrier profiles on ultrashort time scales or for materials with fast radiative decay times. We present clear strategies to investigate energy transport in disordered materials for more effective design and optimization of electronic and optoelectronic devices.

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