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Researcher profile

Vivek Venkataraman

Vivek Venkataraman contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.opticscond-mat.mes-hallphysics.atom-ph

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Published work

6 published item(s)

preprint2015arXiv

On-Chip Diamond Raman Laser

Synthetic single-crystal diamond has recently emerged as a promising platform for Raman lasers at exotic wavelengths due to its giant Raman shift, large transparency window and excellent thermal properties yielding a greatly enhanced figure-of-merit compared to conventional materials. To date, diamond Raman lasers have been realized using bulk plates placed inside macroscopic cavities, requiring careful alignment and resulting in high threshold powers (~W-kW). Here we demonstrate an on-chip Raman laser based on fully-integrated, high quality-factor, diamond racetrack micro-resonators embedded in silica. Pumping at telecom wavelengths, we show Stokes output discretely tunable over a ~100nm bandwidth around 2-μm with output powers >250 μW, extending the functionality of diamond Raman lasers to an interesting wavelength range at the edge of the mid-infrared spectrum. Continuous-wave operation with only ~85 mW pump threshold power in the feeding waveguide is demonstrated along with continuous, mode-hop-free tuning over ~7.5 GHz in a compact, integrated-optics platform.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Waveguide-loaded silica fibers for coupling to high-index micro-resonators

Tapered silica fibers are often used to rapidly probe the optical properties of micro-resonators. However, their low refractive index precludes phase-matching when coupling to high-index micro-resonators, reducing efficiency. Here we demonstrate efficient optical coupling from tapered fibers to high-index micro-resonators by loading the fibers with an ancillary adiabatic waveguide-coupler fabricated via angled-etching. We demonstrate greatly enhanced coupling to a silicon multimode micro-resonator when compared to coupling via the bare fiber only. Signatures of resonator optical bistability are observed at high powers. This scheme can be applied to resonators of any size and material, increasing the functional scope of fiber coupling.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Integrated high quality factor lithium niobate microdisk resonators

Lithium Niobate (LN) is an important nonlinear optical material. Here we demonstrate LN microdisk resonators that feature optical quality factor ~ 100,000, realized using robust and scalable fabrication techniques, that operate over a wide wavelength range spanning visible and near infrared. Using our resonators, and leveraging LN's large second order optical nonlinearity, we demonstrate on-chip second harmonic generation with a conversion efficiency of 0.109 W-1.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Analytical Drain Current Model of Nanoscale Strained-Si/SiGe MOSFETs for Analog Circuit Simulation

For nanoscale CMOS applications, strained-silicon devices have been receiving considerable attention owing to their potential for achieving higher performance and compatibility with conventional silicon processing. In this work, an analytical model for the output current characteristics (I-V) of nanoscale bulk strained-Si/SiGe MOSFETs, suitable for analog circuit simulation, is developed. We demonstrate significant current enhancement due to strain, even in short channel devices, attributed to the velocity overshoot effect. The accuracy of the results obtained using our analytical model is verified using two-dimensional device simulations.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Compact Modeling of Parasitic Internal Fringe Capacitance Effects on the Threshold Voltage of High-K Gate Dielectric Nanoscale SOI MOSFETs

A compact model for the effect of parasitic internal fringe capacitance on threshold voltage in high-K gate dielectric SOI MOSFETs is developed. Our model includes the effects of the gate dielectric permittivity, spacer oxide permittivity, spacer width, gate length and width of MOS structure. A simple expression for parasitic internal fringe capacitance from the bottom edge of the gate electrode is obtained and the charges induced in the source and drain regions due to this capacitance are considered. We demonstrate an increase in surface potential along the channel due to these charges resulting in a decrease in the threshold voltage with increase in gate dielectric permittivity. The accuracy of the results obtained using our analytical model is verified using 2-D device simulations.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Enhanced Two-Photon Absorption in a Hollow-Core Photonic Bandgap Fiber

We show that two-photon absorption (TPA) in Rubidium atoms can be greatly enhanced by the use of a hollow-core photonic bandgap fiber. We investigate off-resonant, degenerate Doppler-free TPA on the 5S1/2 - 5D5/2 transition and observe 1% absorption of a pump beam with a total power of only 1 mW in the fiber. These results are verified by measuring the amount of emitted blue fluorescence and are consistent with the theoretical predictions which indicate that transit time effects play an important role in determining the two-photon absorption cross-section in a confined geometry.

0 citations0 reviewsNo code linkedOpen access