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Researcher profile

Vivek Saraswat

Vivek Saraswat contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.app-phcond-mat.mtrl-scicond-mat.mes-hallNeural and Evolutionary ComputingNeurons and Cognition

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Published work

6 published item(s)

preprint2022arXiv

Free-Standing Epitaxial SrTiO$_3$ Nanomembranes via Remote Epitaxy using Hybrid Molecular Beam Epitaxy

The epitaxial growth of functional materials using a substrate with a graphene layer is a highly desirable method for improving structural quality and obtaining free-standing epitaxial nano-membranes for scientific study, applications, and economical reuse of substrates. However, the aggressive oxidizing conditions typically employed to grow epitaxial perovskite oxides can damage graphene. Here, we demonstrate a technique based on hybrid molecular beam epitaxy that does not require an independent oxygen source to achieve epitaxial growth of complex oxides without damaging the underlying graphene. The technique produces films with self-regulating cation stoichiometry control and epitaxial orientation to the oxide substrate. Furthermore, the films can be exfoliated and transferred to foreign substrates while leaving the graphene on the original substrate. These results open the door to future studies of previously unattainable free-standing nano-membranes grown in an adsorption-controlled manner by hybrid molecular beam epitaxy, and has potentially important implications for the commercial application of perovskite oxides in flexible electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces

Remote epitaxy is a promising approach for synthesizing exfoliatable crystalline membranes and enabling epitaxy of materials with large lattice mismatch. However, the atomic scale mechanisms for remote epitaxy remain unclear. Here we experimentally demonstrate that GaSb films grow on graphene-terminated GaSb (001) via a seeded lateral epitaxy mechanism, in which pinhole defects in the graphene serve as selective nucleation sites, followed by lateral epitaxy and coalescence into a continuous film. Remote interactions are not necessary in order to explain the growth. Importantly, the small size of the pinholes permits exfoliation of continuous, free-standing GaSb membranes. Due to the chemical similarity between GaSb and other III-V materials, we anticipate this mechanism to apply more generally to other materials. By combining molecular beam epitaxy with \textit{in-situ} electron diffraction and photoemission, plus \textit{ex-situ} atomic force microscopy and Raman spectroscopy, we track the graphene defect generation and GaSb growth evolution a few monolayers at a time. Our results show that the controlled introduction of nanoscale openings in graphene provides a powerful route towards tuning the growth and properties of epitaxial films and membranes on 2D materials.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Selective area epitaxy of GaAs films using patterned graphene on Ge

We demonstrate selective area epitaxy of GaAs films using patterned graphene masks on a Ge (001) substrate. The GaAs selectively grows on exposed regions of the Ge substrate, for graphene spacings as large as 10 microns. The selectivity is highly dependent on the growth temperature and annealing time, which we explain in terms of temperature dependent sticking coefficients and surface diffusion. The high nucleation selectivity over several microns sets constraints on experimental realizations of remote epitaxy.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Adaptive Chemotaxis for improved Contour Tracking using Spiking Neural Networks

In this paper we present a Spiking Neural Network (SNN) for autonomous navigation, inspired by the chemotaxis network of the worm Caenorhabditis elegans. In particular, we focus on the problem of contour tracking, wherein the bot must reach and subsequently follow a desired concentration setpoint. Past schemes that used only klinokinesis can follow the contour efficiently but take excessive time to reach the setpoint. We address this shortcoming by proposing a novel adaptive klinotaxis mechanism that builds upon a previously proposed gradient climbing circuit. We demonstrate how our klinotaxis circuit can autonomously be configured to perform gradient ascent, gradient descent and subsequently be disabled to seamlessly integrate with the aforementioned klinokinesis circuit. We also incorporate speed regulation (orthokinesis) to further improve contour tracking performance. Thus for the first time, we present a model that successfully integrates klinokinesis, klinotaxis and orthokinesis. We demonstrate via contour tracking simulations that our proposed scheme achieves an 2.4x reduction in the time to reach the setpoint, along with a simultaneous 8.7x reduction in average deviation from the setpoint.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Reaction-Drift Model for Switching Transients in Pr$_{0.7}$Ca$_{0.3}$MnO$_3$-Based Resistive RAM

Pr$_{0.7}$Ca$_{0.3}$MnO$_3$ (PCMO) based RRAM shows promising memory properties like non-volatility, low variability, multiple resistance states and scalability. From a modeling perspective, the charge carrier DC current modeling of PCMO RRAM by drift diffusion (DD) in the presence of fixed oxygen ion vacancy traps and self-heating (SH) in Technology Computer Aided Design (TCAD) (but without oxygen ionic transport) was able to explain the experimentally observed space charge limited conduction (SCLC) characteristics, prior to resistive switching. Further, transient analysis using DD+SH model was able to reproduce the experimentally observed fast current increase at ~100 ns timescale, prior to resistive switching. However, a complete quantitative transient current transport plus resistive switching model requires the inclusion of ionic transport. We propose a Reaction-Drift (RD) model for oxygen ion vacancy related trap density variation, which is combined with the DD+SH model. Earlier we have shown that the Set transient consists of 3 stages and Reset transient consists of 4 stages experimentally. In this work, the DD+SH+RD model is able to reproduce the entire transient behavior over 10 ns - 1 s range in timescale for both the Set and Reset operations for different applied biases and ambient temperatures. Remarkably, a universal Reset experimental behavior, log(I) is proportional to (m X log(t)) where m~-1/10 is reproduced in simulations. This model is the first model for PCMO RRAMs to significantly reproduce transient Set/Reset behavior. This model establishes the presence of self-heating and ionic-drift limited resistive switching as primary physical phenomena in these RRAMs.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Scalable near-infrared graphene plasmonic resonators exhibiting strong non-local and electron quantization effects

Graphene plasmonic resonators have been broadly studied in the terahertz and mid-infrared ranges because of their electrical tunability and large confinement factors which can enable dramatic enhancement of light-matter coupling. In this work, we demonstrate that the characteristic scaling laws of graphene plasmons change for smaller (< 40 nm) plasmonic wavelengths, expanding the operational frequencies of graphene plasmonic resonators into the near-infrared (NIR) and modifying their optical confinement properties. We utilize a novel bottom-up block copolymer lithography method that substantially improves upon top-down methods to create resonators as narrow as 12 nm over centimeter-scale areas. Measurements of these structures reveal that their plasmonic resonances are strongly influenced by non-local and quantum effects, which push their resonant frequency into the NIR (2.2 um), almost double the frequency of previous experimental works. The confinement factors of these resonators, meanwhile, reach 137 +/- 25, amongst the largest reported in literature for an optical cavity. While our findings indicate that the enhancement of some &#39;forbidden&#39; transitions are an order of magnitude weaker than predicted, the combined NIR response and large confinement of these structures make them an attractive platform to explore ultra-strongly enhanced spontaneous emission.

0 citations0 reviewsNo code linkedOpen access