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Researcher profile

Michael S. Arnold

Michael S. Arnold contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sciphysics.app-phcond-mat.mes-hall

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Published work

4 published item(s)

preprint2022arXiv

Free-Standing Epitaxial SrTiO$_3$ Nanomembranes via Remote Epitaxy using Hybrid Molecular Beam Epitaxy

The epitaxial growth of functional materials using a substrate with a graphene layer is a highly desirable method for improving structural quality and obtaining free-standing epitaxial nano-membranes for scientific study, applications, and economical reuse of substrates. However, the aggressive oxidizing conditions typically employed to grow epitaxial perovskite oxides can damage graphene. Here, we demonstrate a technique based on hybrid molecular beam epitaxy that does not require an independent oxygen source to achieve epitaxial growth of complex oxides without damaging the underlying graphene. The technique produces films with self-regulating cation stoichiometry control and epitaxial orientation to the oxide substrate. Furthermore, the films can be exfoliated and transferred to foreign substrates while leaving the graphene on the original substrate. These results open the door to future studies of previously unattainable free-standing nano-membranes grown in an adsorption-controlled manner by hybrid molecular beam epitaxy, and has potentially important implications for the commercial application of perovskite oxides in flexible electronics.

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preprint2022arXiv

Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces

Remote epitaxy is a promising approach for synthesizing exfoliatable crystalline membranes and enabling epitaxy of materials with large lattice mismatch. However, the atomic scale mechanisms for remote epitaxy remain unclear. Here we experimentally demonstrate that GaSb films grow on graphene-terminated GaSb (001) via a seeded lateral epitaxy mechanism, in which pinhole defects in the graphene serve as selective nucleation sites, followed by lateral epitaxy and coalescence into a continuous film. Remote interactions are not necessary in order to explain the growth. Importantly, the small size of the pinholes permits exfoliation of continuous, free-standing GaSb membranes. Due to the chemical similarity between GaSb and other III-V materials, we anticipate this mechanism to apply more generally to other materials. By combining molecular beam epitaxy with \textit{in-situ} electron diffraction and photoemission, plus \textit{ex-situ} atomic force microscopy and Raman spectroscopy, we track the graphene defect generation and GaSb growth evolution a few monolayers at a time. Our results show that the controlled introduction of nanoscale openings in graphene provides a powerful route towards tuning the growth and properties of epitaxial films and membranes on 2D materials.

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preprint2021arXiv

Selective area epitaxy of GaAs films using patterned graphene on Ge

We demonstrate selective area epitaxy of GaAs films using patterned graphene masks on a Ge (001) substrate. The GaAs selectively grows on exposed regions of the Ge substrate, for graphene spacings as large as 10 microns. The selectivity is highly dependent on the growth temperature and annealing time, which we explain in terms of temperature dependent sticking coefficients and surface diffusion. The high nucleation selectivity over several microns sets constraints on experimental realizations of remote epitaxy.

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preprint2020arXiv

Scalable near-infrared graphene plasmonic resonators exhibiting strong non-local and electron quantization effects

Graphene plasmonic resonators have been broadly studied in the terahertz and mid-infrared ranges because of their electrical tunability and large confinement factors which can enable dramatic enhancement of light-matter coupling. In this work, we demonstrate that the characteristic scaling laws of graphene plasmons change for smaller (< 40 nm) plasmonic wavelengths, expanding the operational frequencies of graphene plasmonic resonators into the near-infrared (NIR) and modifying their optical confinement properties. We utilize a novel bottom-up block copolymer lithography method that substantially improves upon top-down methods to create resonators as narrow as 12 nm over centimeter-scale areas. Measurements of these structures reveal that their plasmonic resonances are strongly influenced by non-local and quantum effects, which push their resonant frequency into the NIR (2.2 um), almost double the frequency of previous experimental works. The confinement factors of these resonators, meanwhile, reach 137 +/- 25, amongst the largest reported in literature for an optical cavity. While our findings indicate that the enhancement of some &#39;forbidden&#39; transitions are an order of magnitude weaker than predicted, the combined NIR response and large confinement of these structures make them an attractive platform to explore ultra-strongly enhanced spontaneous emission.

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