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Researcher profile

Vivek Mishra

Vivek Mishra contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.supr-conApplicationsmath.CVq-fin.CP

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Published work

3 published item(s)

preprint2023arXiv

Integration of Fractional Order Black-Scholes Merton with Neural Network

This study enhances option pricing by presenting unique pricing model fractional order Black-Scholes-Merton (FOBSM) which is based on the Black-Scholes-Merton (BSM) model. The main goal is to improve the precision and authenticity of option pricing, matching them more closely with the financial landscape. The approach integrates the strengths of both the BSM and neural network (NN) with complex diffusion dynamics. This study emphasizes the need to take fractional derivatives into account when analyzing financial market dynamics. Since FOBSM captures memory characteristics in sequential data, it is better at simulating real-world systems than integer-order models. Findings reveals that in complex diffusion dynamics, this hybridization approach in option pricing improves the accuracy of price predictions. the key contribution of this work lies in the development of a novel option pricing model (FOBSM) that leverages fractional calculus and neural networks to enhance accuracy in capturing complex diffusion dynamics and memory effects in financial data.

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preprint2022arXiv

Enhanced two-component superconductivity in CoSi2/TiSi2 heterojunctions

We report enhanced two-component superconductivity in (CoSi2/Si)/TiSi2 superconductor/normal-metal (S/N) heterojunctions. An enhanced superconducting transition temperature about twice that of CoSi2 and an upper critical field about 20 times bigger than that of epitaxial CoSi2/Si films were found. The tunneling spectra of three-terminal S/N junctions show pronounced zero-bias conductance peaks (ZBCPs) that signify penetration of odd-frequency, spin-triplet and even-parity Cooper pairs in TiSi2 from triplet dominant pairing in CoSi2/Si driven by symmetry reduction at the CoSi2/Si interface. Both the enhancement of the superconducting transition temperature and the ZBCPs are found to be more pronounced if TiSi2 is made more diffusive.

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preprint2021arXiv

Intermediate scattering potential strength in electron-irradiated $\text{YBa}_{2}\text{Cu}_{3}\text{O}_{7-δ}$ from London penetration depth measurements

Temperature-dependent London penetration depth, $λ(T)$, of a high quality optimally-doped $\text{YBa}_{2}\text{Cu}_{3}\text{O}_{7-δ}$ single crystal was measured using tunnel-diode resonator. Controlled artificial disorder was induced at low-temperature of 20~K by 2.5 MeV electron irradiation at accumulating large doses of $3.8\times10^{19}$ and $5.3\times10^{19}$ electrons per $\textrm{cm}^{2}$. The irradiation caused significant suppression of the superconductor's critical temperature, $T_{c}$, from 94.6 K to 90.0 K, and then to 78.7 K, respectively. The low-temperature behavior of $λ\left(T\right)$ evolves from a $T-$linear in pristine state to a $T^{2}-$behavior after the irradiation, expected for a line-nodal $d-$wave superconductor. However, the original theory that explained such behavior had assumed a unitary limit of the scattering potential, whereas usually in normal metals and semiconductors, Born scattering is sufficient to describe the experiment. To estimate the scattering potential strength, we calculated the normalized superfluid density, $ρ_{s}\left(t=T/T_{c}\right)=λ^{2}\left(0\right)/λ^{2}\left(t\right)$, varying the amount and the strength of non-magnetic scattering using a self-consistent $t-$matrix theory. Fitting the obtained curves to a power-law, $ρ_{s}=1-Rt^{n}$, and to a polynomial, $ρ_{s}=1-At-Bt^{2}$, and comparing the coefficients $n$ in one set, and $A$ and $B$ in another with the experimental values, we estimate the phase shift to be around 70$^{\circ}$ and 65$^{\circ}$, respectively. We correlate this result with the evolution of the density of states with non-magnetic disorder.

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