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Vinh Ta Phuoc

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Published work

2 published item(s)

preprint2020arXiv

Structural, magnetic and insulator-to-metal transitions under pressure in the GaV4S8 Mott insulator: A rich phase diagram up to 14.7 GPa

In addition to its promising potential for applications, GaV4S8 shows very interesting physical properties with temperature and magnetic field. These properties can be tuned by applying hydrostatic pressure in order to reveal and understand the physics of these materials. Not only pressure induces an insulator-to-metal transition in GaV4S8 but it also has an interesting effect on the structural and magnetic transitions. Using a combination of AC calorimetry, capacitance, and resistivity measurements under pressure, we determine the evolution of the structural and magnetic transitions with pressure and thus establish the T-P phase diagram of GaV4S8. To detect the insulator-to-metal transition, we use optical conductivity and DC resistivity measurements and we follow the evolution of the Mott gap under pressure. The structural transition temperature increases with pressure and a second transition appears above 6 GPa indicating a possible new phase with a very small gap. Pressure has surprisingly a very weak effect on the ferromagnetic transition that persists even very close to the IMT that occurs at around 14 GPa, implying that the metallic state may also be magnetic.

preprint2013arXiv

Resistive switching induced by electronic avalanche breakdown in GaTa$_4$Se$_{8-x}$Te$_x$ narrow gap Mott Insulators

Mott transitions induced by strong electric fields are receiving a growing interest. Recent theoretical proposals have focused on the Zener dielectric breakdown in Mott insulators, however experimental studies are still too scarce to conclude about the mechanism. Here we report a study of the dielectric breakdown in the narrow gap Mott insulators GaTa$_4$Se$_{8-x}$Te$_x$. We find that the I-V characteristics and the magnitude of the threshold electric field (E$_{th}$) do not correspond to a Zener breakdown, but rather to an avalanche breakdown. E$_{th}$ increases as a power law of the Mott Hubbard gap (E$_g$), in surprising agreement with the universal law E$_{th}$ $\propto$E$_g$$^{2.5}$ reported for avalanche breakdown in semiconductors. However, the delay time for the avalanche that we observe in Mott insulators is over three orders of magnitude longer than in conventional semiconductors. Our results suggest that the electric field induces local insulator-to-metal Mott transitions that create conductive domains which grow to form filamentary paths across the sample.