BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Vincent Thomas Francois Renard

Vincent Thomas Francois Renard contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

Trust snapshot

Quick read

Trust 17 - UnverifiedVerification L1Unclaimed author
4works
0followers
2topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

4 published item(s)

preprint2011arXiv

Few Graphene layer/Carbon-Nanotube composite Grown at CMOS-compatible Temperature

We investigate the growth of the recently demonstrated composite material composed of vertically aligned carbon nanotubes capped by few graphene layers. We show that the carbon nanotubes grow epitaxially under the few graphene layers. By using a catalyst and gaseous carbon precursor different from those used originally we establish that such unconventional growth mode is not specific to a precise choice of catalyst-precursor couple. Furthermore, the composite can be grown using catalyst and temperatures compatible with CMOS processing (T < 450\degree C).

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Boundary-mediated electron-electron interactions in quantum point contacts

An unusual increase of the conductance with temperature is observed in clean quantum point contacts for conductances larger than 2e^2/h. At the same time a positive magnetoresistance arises at high temperatures. A model accounting for electron-electron interactions mediated by bound- aries (scattering on Friedel oscillations) qualitatively describes the observation. It is supported by numerical simulation at zero magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Electron transport through antidot superlattices in $Si/SiGe$ heterostructures: new magnetoresistance resonances in lattices with large diameter antidots

In the present work we have investigated the transport properties in a number of Si/SiGe samples with square antidot lattices of different periods. In samples with lattice periods equal to 700 nm and 850 nm we have observed the conventional low-field commensurability magnetoresistance peaks consistent with the previous observations in GaAs/AlGaAs and Si/SiGe samples with antidot lattices. In samples with a 600 nm lattice period a new series of well-developed magnetoresistance oscillations has been found beyond the last commensurability peak which are supposed to originate from periodic skipping orbits encircling an antidot with a particular number of bounds.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Quantum corrections to the conductivity and Hall coefficient of a 2D electron gas in a dirty AlGaAs/GaAs/AlGaAs quantum well: transition from diffusive to ballistic regime

We report an experimental study of the quantum corrections to the longitudinal conductivity and the Hall coefficient of a low mobility, high density two-dimensional two-dimensional electron gas in a AlGaAs/GaAs/AlGaAs quantum well in a wide temperature range (1.5 K - 110 K). This temperature range covers both the diffusive and the ballistic interaction regimes for our samples. It was therefore possible to study the crossover region for the longitudinal conductivity and the Hall effect.

0 citations0 reviewsNo code linkedOpen access