Researcher profile

Vincent Sacksteder IV

Vincent Sacksteder IV contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 17 - Baseline
4works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

4 published item(s)

preprint2018arXiv

Multi-valuedness of the Luttinger-Ward functional in the Fermionic and Bosonic System with Replicas

We study the properties of the Luttinger-Ward functional (LWF) in a simplified Hubbard-type model without time or spatial dimensions, but with $N$ identical replicas located on a single site. The simplicity of this $(0+0)d$ model permits an exact solution for all $N$ and for both bosonic and fermionic statistics. We show that fermionic statistics are directly linked to the fact that multiple values of the noninteracting Green function $G_0$ map to the same value of the interacting Green function $G$, i.e. the mapping $G_0 \mapsto G$ is non-injective. This implies that with fermionic statistics the $(0+0)d$ model has a multiply-valued LWF. The number of LWF values in the fermionic model increases proportionally to the number of replicas $N$, while in the bosonic model the LWF has a single value regardless of $N$. We also discuss the formal connection between the $(0+0)d$ model and the $(0+1)d$ model which was used in previous studies of LWF multivaluedness.

preprint2015arXiv

Spin Response to Localized Pumps: Exciton Polaritons Versus Electrons and Holes

Polariton polarization can be described in terms of a pseudospin which can be oriented along the $x,\,y,$ or $z$ axis, similarly to electron and hole spin. Unlike electrons and holes where time-reversal symmetry requires that the spin-orbit interaction be odd in the momentum, the analogue of the spin-orbit interaction for polaritons, the so-called TE-TM splitting, is even in the momentum. We calculate and compare spin transport of polariton, electron, and hole systems, in the diffusive regime of many scatterings. After dimensional rescaling diffusive systems with spatially uniform particle densities have identical dynamics, regardless of the particle type. Differences between the three particles appear in spatially non-uniform systems, with pumps at a specific localized point. We consider both oscillating pumps and transient (delta-function) pumps. In such systems each particle type produces distinctive spin patterns. The particles can be distinguished by their differing spatial multipole character, their response and resonances in a perpendicular magnetic field, and their relative magnitude which is largest for electrons and weakest for holes. These patterns are manifested both in response to unpolarized pumps which produce in-plane and perpendicular spin signals, and to polarized pumps where the spin precesses from in-plane to out-of-plane and vice versa. These results will be useful for designing systems with large spin polarization signals, for identifying the dominant spin-orbit interaction and measuring subdominant terms in experimental devices, and for measuring the scattering time and the spin-orbit coupling's magnitude.

preprint2013arXiv

Disorder induced field effect transistor in bilayer and trilayer graphene

We propose use of disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the disorder's effects are confined to only one of the graphene layers. This effect is based on the bias voltage's ability to select which of the graphene layers carries current, and is not tied to the presence of a gap in the density of states. In particular, we demonstrate this effect in models of gapless ABA-stacked trilayer graphene, gapped ABC-stacked trilayer graphene, and gapped bilayer graphene.

preprint2012arXiv

Phase Structure of the Topological Anderson Insulator

We study the disordered topological Anderson insulator in a 2-D (square not strip) geometry. We first report the phase diagram of finite systems and then study the evolution of phase boundaries when the system size is increased to a very large $1120 \times 1120$ area. We establish that conductance quantization can occur without a bulk band gap, and that there are two distinct scaling regions with quantized conductance: TAI-I with a bulk band gap, and TAI-II with localized bulk states. We show that there is no intervening insulating phase between the bulk conduction phase and the TAI-I and TAI-II scaling regions, and that there is no metallic phase at the transition between the quantized and insulating phases. Centered near the quantized-insulating transition there are very broad peaks in the eigenstate size and fractal dimension $d_2$; in a large portion of the conductance plateau eigenstates grow when the disorder strength is increased. The fractal dimension at the peak maximum is $d_2 \approx 1.5$. Effective medium theory (CPA, SCBA) predicts well the boundaries and interior of the gapped TAI-I scaling region, but fails to predict all boundaries save one of the ungapped TAI-II scaling region. We report conductance distributions near several phase transitions and compare them with critical conductance distributions for well-known models.