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Researcher profile

Viktor Krueckl

Viktor Krueckl contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallnlin.CD

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Published work

7 published item(s)

preprint2012arXiv

Bloch-Zener Oscillations in Graphene and Topological Insulators

We show that superlattices based on zero-gap semiconductors such as graphene and mercury telluride exhibit characteristic Bloch--Zener oscillations that emerge from the coherent superposition of Bloch oscillations and multiple Zener tunneling between the electron and hole branch. We demonstrate this mechanism by means of wave packet dynamics in various spatially periodically modulated nanoribbons subject to an external bias field. The associated Bloch frequencies exhibit a peculiar periodic bias dependence which we explain within a two-band model. Supported by extensive numerical transport calculations, we show that this effect gives rise to distinct current oscillations observable in the I-V characteristics of graphene and mercury telluride superlattices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Probing the Band Topology of Mercury Telluride through Weak Localization and Antilocalization

We analyze the effect of weak localization (WL) and weak antilocalization (WAL) in the electronic transport through HgTe/CdTe quantum wells. We show that for increasing Fermi energy the magnetoconductance of a diffusive system with inverted band ordering features a transition from WL to WAL and back, if spin-orbit interactions from bulk and structure inversion asymmetry can be neglected. This, and an additional splitting in the magnetoconductance profile, is a signature of the Berry phase arising for inverted band ordering and not present in heterostructures with conventional ordering. In presence of spin-orbit interaction both band topologies exhibit WAL, which is distinctly energy dependent solely for quantum wells with inverted band ordering. This can be explained by an energy-dependent decomposition of the Hamiltonian into two blocks.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Switching spin and charge between edge states in topological insulator constrictions

Since the prediction of a new topological state of matter in graphene, materials acting as topological insulators have attracted wide attention. Shortly after the theoretical proposal for a mercury telluride (HgTe)-based two-dimensional topological insulator, the observation of the quantum spin Hall effect and non-local edge transport brought compelling experimental evidence for quantized conductance due to edges states. The spin orientation and propagation direction of such helical edge states are inherently connected, providing protection against backscattering. However, these features conversely render controlled spin operations such as spin switching difficult. Here we therefore propose constrictions as connectors between opposite edge (and spin) states in HgTe. We demonstrate how the coupling between edge states, which overlap in the constriction, can be employed both for steering the charge flow into different edge modes and for controlled spin switching. This gives rise to a three-state charge and spin transistor function. Unlike in a conventional spin transistor, the switching does not rely on a tunable Rashba spin-orbit interaction, but on the energy dependence of the edge state wavefunctions. Based on this mechanism, and supported by numerical transport calculations, we present two different ways to control spin- and charge-currents depending on the gating of the constriction.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Self-consistent calculation of electric potentials in Hall devices

Using a first-principles classical many-body simulation of a Hall bar, we study the necessary conditions for the formation of the Hall potential: (i) Ohmic contacts with metallic reservoirs, (ii) electron-electron interactions, and (iii) confinement to a finite system. By propagating thousands of interacting electrons over million time-steps we capture the build-up of the self-consistent potential, which resembles results obtained by conformal-mapping methods. As shown by a microscopic model of the current injection, the Hall effect is linked to specific boundary conditions at the particle reservoirs.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Wave packet approach to transport in mesoscopic systems

Wave packets provide a well established and versatile tool for studying time-dependent effects in molecular physics. Here, we demonstrate the application of wave packets to mesoscopic nanodevices at low temperatures. The electronic transport in the devices is expressed in terms of scattering and transmission coefficients, which are efficiently obtained by solving an initial value problem (IVP) using the time-dependent Schroedinger equation. The formulation as an IVP makes non-trivial device topologies accessible and by tuning the wave packet parameters one can extract the scattering properties for a large range of energies.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Weak localization in mesoscopic hole transport: Berry phases and classical correlations

We consider phase-coherent transport through ballistic and diffusive two-dimensional hole systems based on the Kohn-Luttinger Hamiltonian. We show that intrinsic heavy-hole light-hole coupling gives rise to clear-cut signatures of an associated Berry phase in the weak localization which renders the magneto-conductance profile distinctly different from electron transport. Non-universal classical correlations determine the strength of these Berry phase effects and the effective symmetry class, leading even to antilocalization-type features for circular quantum dots and Aharonov-Bohm rings in the absence of additional spin-orbit interaction. Our semiclassical predictions are quantitatively confirmed by numerical transport calculations.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Theory of the quantum Hall effect in graphene

We study the quantum Hall effect (QHE) in graphene based on the current injection model. In our model, the presence of disorder, the edge-state picture, extended states and localized states, which are believed to be indispensable ingredients in describing the QHE, do not play an important role. Instead the boundary conditions during the injection into the graphene sheet, which are enforced by the presence of the Ohmic contacts, determine the current-voltage characteristics.

0 citations0 reviewsNo code linkedOpen access