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Vikram V. Deshpande

Vikram V. Deshpande appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

10 published item(s)

preprint2022arXiv

Nanomechanical Characterization of an Antiferromagnetic Topological Insulator

The antiferromagnetic topological insulator MnBi2Te4 (MBT) exhibits an ideal platform to study exotic topological phenomena and magnetic properties. The transport signatures of magnetic phase transitions in the MBT family materials have been well-studied. However, their mechanical properties and magneto-mechanical coupling have not been well-explored. We use nanoelectromechanical systems to study the intrinsic magnetism in MBT thin flakes via their magnetostrictive coupling. We investigate mechanical resonance signatures of magnetic phase transitions from antiferromagnetic (AFM) to canted antiferromagnetic (cAFM) to ferromagnetic (FM) phases versus magnetic field at different temperatures. The spin-flop transitions in MBT are revealed by frequency shifts of mechanical resonance. With temperatures going above TN, the transitions disappear in the resonance frequency map, consistent with transport measurements. We use a magnetostrictive model to correlate the frequency shifts with the spin-canting states. Our work demonstrates a technique to study magnetic phase transitions, magnetization and magnetoelastic properties of the magnetic topological insulator.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Landau Levels of Topologically-Protected Surface States Probed by Dual-Gated Quantum Capacitance

Spectroscopy of discrete Landau levels (LLs) in bulk-insulating three-dimensional topological insulators (3D TIs) in perpendicular magnetic field characterizes the Dirac nature of their surface states. Despite a number of studies demonstrating the quantum Hall effect (QHE) of topological surface states, quantitative evaluation of the LL energies, which serve as fundamental electronic quantities for study of the quantum states, is still limited. In this work, we explore the density of states of LLs by measuring quantum capacitance (CQ) in a truly bulk insulating 3D TI via a van der Waals heterostructure configuration. By applying dual gate voltages, we access the individual surface states' LLs and extract their chemical potentials to quantify the LL spacings of each surface. We evaluate the LLs' energies at two distinguished QH states, namely dissipationless (ν= +/-1) and dissipative (ν= 0) states in the 3D TI.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Topological Phase Transitions in a Hybridized Three-Dimensional Topological Insulator

As the thickness of a three-dimensional (3D) topological insulator (TI) becomes comparable to the penetration depth of the surface states, quantum tunneling between surfaces turns their gapless Dirac electronic structure into a gapped surface state. Analytical formulation suggests that the hybridization gap scales exponentially with decrease in number of layers while the system oscillates between topologically trivial and non-trivial insulators. This work explores the transport properties of a 3D TI in the inter-surface hybridization regime. By experimentally probing the hybridization gap as a function of BiSbTeSe2 thickness using three different methods, we map the crossover from the 3D to 2D state. In the 2D topological state, we observe a finite longitudinal conductance at ~2e2/h when the Fermi level is aligned within the surface gap, indicating a quantum spin Hall (QSH) state. Additionally, we study the response of trivial and non-trivial hybridization gapped states modulated by external out-of-plane magnetic and electric fields. Our revelations of surface gap-closing and/or reopening features are strongly indicative of topological phase transitions (TPTs) in the hybridization gap regime, realizing magnetic/electric field switching between band insulating and QSH states with immense potential for practical applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Tunable Coupling between Surface States of a Three-Dimensional Topological Insulator in the Quantum Hall Regime

The paired top and bottom Dirac surface states, each associated with a half-integer quantum Hall (QH) effect, and a resultant integer QH conductance (νe2/h), are hallmarks of a three-dimensional (3D) topological insulator (TI). In a dual-gated system, chemical potentials of the paired surface states are controlled through separate gates. In this work, we establish tunable capacitive coupling between the surface states of a bulk-insulating TI BiSbTeSe2 and study the effect of this coupling on QH plateaus and Landau level (LL) fan diagram via dual-gate control. We observe non-linear QH transitions at low charge density in strongly-coupled surface states, which are related to the charge-density-dependent coupling strength. A splitting of the N= 0 LL at the charge neutrality point for thin devices (but thicker than the 2D limit) indicates inter-surface hybridization possibly beyond single-particle effects. By applying capacitor charging models to the surface states, we explore their chemical potential as a function of charge density and extract the fundamental electronic quantity of LL energy gaps from dual-gated transport and capacitance measurements. These studies are essential for the realization of exotic quantum effects such as topological exciton condensation.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Graphene mechanical oscillators with tunable frequency

Oscillators, which produce continuous periodic signals from direct current power, are central to modern communications systems, with versatile applications such as timing references and frequency modulators. However, conventional oscillators typically consist of macroscopic mechanical resonators such as quartz crystals, which require excessive off-chip space. Here we report oscillators built on micron-size, atomically-thin graphene nanomechanical resonators, whose frequencies can be electrostatically tuned by as much as 14\%. The self-sustaining mechanical motion of the oscillators is generated and transduced at room temperature by simple electrical circuitry. The prototype graphene voltage controlled oscillators exhibit frequency stability and modulation bandwidth sufficient for modulation of radio-frequency carrier signals. As a demonstration, we employ a graphene oscillator as the active element for frequency modulated signal generation, and achieve efficient audio signal transmission.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Modulation of mechanical resonance by chemical potential oscillation in graphene

The classical picture of the force on a capacitor assumes a large density of electronic states, such that the electrochemical potential of charges added to the capacitor is given by the external electrostatic potential and the capacitance is determined purely by geometry. Here we consider capacitively driven motion of a nano-mechanical resonator with a low density of states, in which these assumptions can break down. We find three leading-order corrections to the classical picture: the first of is a modulation in the static force due to variation in the internal chemical potential, the second and third are change in static force and dynamic spring constant due to the rate of change of chemical potential, expressed as the quantum (density of states) capacitance. As a demonstration, we study a capacitively driven graphene mechanical resonators, where the chemical potential is modulated independently of the gate voltage using an applied magnetic field to manipulate the energy of electrons residing in discrete Landau levels. In these devices, we observe large periodic frequency shifts consistent with the three corrections to the classical picture. In devices with extremely low strain and disorder, the first correction term dominates and the resonant frequency closely follows the chemical potential. The theoretical model fits the data with only one adjustable parameter representing disorder-broadening of the Landau levels. The underlying electromechanical coupling mechanism is not limited the particular choice of material, geometry, or mechanism for variation in chemical potential, and can thus be extended to other low-dimensional systems.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

SU-8 clamped CVD graphene drum resonators

Graphene mechanical resonators are the ultimate two-dimensional nanoelectromechanical systems (NEMS) with applications in sensing and signal processing. While initial devices have shown promising results, an ideal graphene NEMS resonator should be strain engineered, clamped at the edge without trapping gas underneath, and electrically integratable. In this letter, we demonstrate fabrication and direct electrical measurement of circular SU-8 polymer-clamped chemical vapor deposition (CVD) graphene drum resonators. The clamping increases device yield and responsivity, while providing a cleaner resonance spectrum from eliminated edge modes. Furthermore, this resonator is highly strained, indicating its potential in strain engineering for performance enhancement.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Tunable electronic correlation effects in nanotube-light interactions

Electronic many-body correlation effects in one-dimensional (1D) systems such as carbon nanotubes have been predicted to modify strongly the nature of photoexcited states. Here we directly probe this effect using broadband elastic light scattering from individual suspended carbon nanotubes under electrostatic gating conditions. We observe significant shifts in optical transition energies, as well as line broadening, as the carrier density is increased. The results demonstrate the differing role of screening of many-body electronic interactions on the macroscopic and microscopic length scales, a feature inherent to quasi-1D systems. Our findings further demonstrate the possibility of electrical tuning of optical transitions and provide a basis for understanding of various optical phenomena in carbon nanotubes and other quasi-1D systems in the presence of charge carrier doping.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Radio frequency electrical transduction of graphene mechanical resonators

We report radio frequency (rf) electrical readout of graphene mechanical resonators. The mechanical motion is actuated and detected directly by using a vector network analyzer, employing a local gate to minimize parasitic capacitance. A resist-free doubly clamped sample with resonant frequency ~ 34 MHz, quality factor ~ 10000 at 77 K, and signal-to-background ratio of over 20 dB is demonstrated. In addition to being over two orders of magnitude faster than the electrical rf mixing method, this technique paves the way for use of graphene in rf devices such as filters and oscillators.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Direct Observation of Born-Oppenheimer Approximation Breakdown in Carbon Nanotubes

Raman spectra and electrical conductance of individual, pristine, suspended, metallic single-walled carbon nanotubes are measured under applied gate potentials. The G- band is observed to downshift with small applied gate voltages, with the minima occurring at EF = +/- 1/2 Ephonon, contrary to adiabatic predictions. A subsequent upshift in the Raman frequency at higher gate voltages results in a 'W'-shaped Raman shift profile that agrees well with a non-adiabatic phonon renormalization model. This behavior constitutes the first experimental confirmation of the theoretically predicted breakdown of the Born-Oppenheimer approximation in individual single walled carbon nanotubes.

0 citations0 reviewsNo code linkedOpen access