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Vikram Tripathi

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Published work

14 published item(s)

preprint2022arXiv

Quasiparticle metamorphosis in the random t-J model

Motivated by the pseudogap-Fermi liquid transition in doped Mott insulators, we examine the excitations of a $t$-$J$ model with random and all-to-all hopping and exchange. The stability of quasiparticles such as spin-1/2 fermions, spin-1 magnons, and emergent Jordan-Wigner (JW) spinless fermions is cast as a problem of localization in the many-body Hilbert space, which is studied by the FEAST eigensolver algorithm. At low dopings, magnons and JW fermions are better defined than spin-1/2 fermions, which are unstable. Upon crossing a critical value of doping around $p_c$ = 1/3, their stabilities are interchanged. Near the critical doping, these quasiparticles are all found to be ill-defined. The critical point is thus associated with a localization transition in the many-body Hilbert space

preprint2020arXiv

Kitaev quasiparticles in a proximate spin liquid: A many-body localization perspective

We study the stability of Kitaev quasiparticles in the presence of a perturbing Heisenberg interaction as a Fock space localization phenomenon. We identify parameter regimes where Kitaev states are localized, fractal or delocalized in the Fock space of exact eigenstates, with the first two implying quasiparticle stability. Finite temperature calculations show that a vison gap, and a nonzero plaquette Wilson loop at low temperatures, both characteristic of the deconfined Kitaev spin liquid phase, persist far into the neighboring phase that has a concomitant stripy spin-density wave (SDW) order. The key experimental implication for Kitaev materials is that below a characteristic energy scale, unrelated to the SDW ordering, Kitaev quasiparticles are stable.

preprint2020arXiv

Superconductor-like effects in an AC driven normal Mott-insulating quantum dot array

We study the current response of an AC driven dissipative Mott insulator system, a normal quantum dot array, using an analytical Keldysh field theory approach. Deep in the Mott insulator regime, the nonequilibrium steady state (NESS) response resembles a resistively shunted Josephson array, with a nonequilibrium Mott insulating to conductor transition as the drive frequency Ω is increased. The diamagnetic component of the NESS in the conducting phase is anomalous, implying negative inductance, strikingly reminiscent of the η-pairing phase of a Josephson array with negative phase stiffness. However in the presence of an additional DC field the signature of supercurrent - Shapiro steps - is completely absent. We interpret these properties as number-phase fluctuation effects shared with Josephson systems rather than superconductivity.

preprint2015arXiv

Parity-time symmetry-breaking mechanism of dynamic Mott transitions in dissipative systems

We describe the critical behavior of electric field-driven (dynamic) Mott insulator-to-metal transitions in dissipative Fermi and Bose systems in terms of non-Hermitian Hamiltonians invariant under simultaneous parity (P) and time-reversal (T) operations. The dynamic Mott transition is identified as a PT symmetry-breaking phase transition, with the Mott insulating state corresponding to the regime of unbroken PT symmetry with a real energy spectrum. We establish that the imaginary part of the Hamiltonian arises from the combined effects of the driving field and inherent dissipation. We derive the renormalization and collapse of the Mott gap at the dielectric breakdown and describe the resulting critical behavior of transport characteristics. The obtained critical exponent is in an excellent agreement with experimental findings.

preprint2013arXiv

Tunable Superlattice in Graphene To Control the Number of Dirac Points

Superlattice in graphene generates extra Dirac points in the band structure and their number depends on the superlattice potential strength. Here, we have created a lateral superlattice in a graphene device with a tunable barrier height using a combination of two gates. In this Letter, we demonstrate the use of lateral superlattice to modify the band structure of graphene leading to the emergence of new Dirac cones. This controlled modification of the band structure persists up to 100 K.

preprint2012arXiv

Colossal non-saturating linear magnetoresistance in two-dimensional electron systems at a GaAs/AlGaAs heterointerface

Engineering devices with a large electrical response to magnetic field is of fundamental importance for a range of applications such as magnetic field sensing and magnetic read-heads. We show that a colossal non-saturating linear magnetoresistance (NLMR) arises in two-dimensional electron systems hosted in a GaAs/AlGaAs heterostructure in the strongly insulating regime. When operated at high source-drain bias, the magnetoresistance of our devices increases almost linearly with magnetic field reaching nearly 10,000% at 8 Tesla, thus surpassing many known non-magnetic materials that exhibit giant NLMR. The temperature dependence and mobility analysis indicate that the NLMR has a purely classical origin, driven by nanoscale inhomogeneities. A large NLMR combined with small device dimensions makes these systems a new and attractive candidate for on-chip magnetic field sensing.

preprint2012arXiv

Plasmon mode modifies the elastic response of a nanoscale charge density wave system

The elastic response of suspended NbSe3 nanowires is studied across the charge density wave phase transition. The nanoscale dimensions of the resonator lead to a large resonant frequency (10-100 MHz), bringing the excited phonon frequency in close proximity of the plasmon mode of the electronic condensate - a parameter window not accessible in bulk systems. The interaction between the phonon and plasmon modes strongly modifies the elastic properties at high frequencies. This is manifested in the nanomechanics of the system as a sharp peak in the temperature dependence of the elastic modulus (relative change of 12.8%) in the charge density wave phase.

preprint2011arXiv

Phase diagram of a strongly disordered s-wave superconductor, NbN, close to the metal-insulator transition

We present a phase diagram as a function of disorder in three-dimensional NbN thin films, as the system enters the critical disorder for the destruction of the superconducting state. The superconducting state is investigated using a combination of magnetotransport and tunneling spectroscopy measurements. Our studies reveal 3 different disorder regimes. At low disorder the (k_{F}l~10-4), the system follows the mean field Bardeen-Cooper-Schrieffer behavior where the superconducting energy gap vanishes at the temperature where electrical resistance appears. For stronger disorder (k_{F}l<4) a "pseudogap" state emerges where a gap in the electronic spectrum persists up to temperatures much higher than Tc, suggesting that Cooper pairs continue to exist in the system even after the zero resistance state is destroyed. Finally, very strongly disordered samples (k_{F}l<1) exhibit a pronounced magnetoresistance peak at low temperatures, suggesting that localized Cooper pairs continue to survive in the system even after the global superconducting ground state is completely destroyed.

preprint2011arXiv

Phase transitions in the distribution of the Andreev conductance of superconductor-metal junctions with multiple transverse modes

We compute analytically the full distribution of Andreev conductance $G_{\mathrm{NS}}$ of a metal-superconductor interface with a large number $N_c$ of transverse modes, using a random matrix approach. The probability distribution $\mathcal{P}(G_{\mathrm{NS}},N_c)$ in the limit of large $N_c$ displays a Gaussian behavior near the average value $<G_{\mathrm{NS}}>= (2-\sqrt{2}) N_c$ and asymmetric power-law tails in the two limits of very small and very large $G_{\mathrm{NS}}$. In addition, we find a novel third regime sandwiched between the central Gaussian peak and the power law tail for large $G_{\mathrm{NS}}$. Weakly non-analytic points separate these four regimes---these are shown to be consequences of three phase transitions in an associated Coulomb gas problem.

preprint2010arXiv

Charge inhomogeneities and transport in semiconductor heterostructures with a manganese $δ$-layer

We study experimentally and theoretically the effects of disorder, nonlinear screening, and magnetism in semiconductor heterostructures containing a $δ$-layer of Mn, where the charge carriers are confined within a quantum well and hence both ferromagnetism and transport are two-dimensional (2D) and differ qualitatively from their bulk counterparts. Anomalies in the electrical resistance observed in both metallic and insulating structures can be interpreted as a signature of significant ferromagnetic correlations. The insulating samples turn out to be the most interesting as they can give us valuable insights into the mechanisms of ferromagnetism in these heterostructures. At low charge carrier densities, we show how the interplay of disorder and nonlinear screening can result in the organization of the carriers in the 2D transport channel into charge droplets separated by insulating barriers. Based on such a droplet picture and including the effect of magnetic correlations, we analyze the transport properties of this set of droplets, compare it with experimental data, and find a good agreement between the model calculations and experiment. Our analysis shows that the peak or shoulder-like features observed in temperature dependence of resistance of 2D heterostructures $δ$-doped by Mn lie significantly below the Curie temperature $T_{C}$ unlike the three-dimensional case, where it lies above and close to $T_{C}$. We also discuss the consequences of our description for understanding the mechanisms of ferromagnetism in the heterostructures under study.

preprint2010arXiv

Effect of Phase Fluctuations on the Superconducting Properties of Strongly Disordered 3D NbN Thin Films

We present transport, Hall effect, electronic tunnelling and penetration depth studies in 3D homogeneously disordered epitaxial NbN thin films with disorder ranging from the moderately clean limit (k_Fl~10.12) to the very dirty limit (k_Fl~1.24). The superconducting transition temperature (T_c) decreases from ~17K to less than 350mK with increasing disorder. The T_c and conductivity at the lowest temperature both asymptotically approach zero as k_Fl tends to 1, indicating a coincidence of the metal-insulator transition (MIT) and the superconductor-insulator transition. Close to critical disorder there is spatial inhomogeneity in the superconducting density of states (DOS) and the superconducting state is governed by quantum phase fluctuations. This results in suppression of the superfluid density (n_s) and a pseudogap state where the resistance is no longer zero but the energy gap remains finite

preprint2010arXiv

Penetration depth and tunneling studies in very thin epitaxial NbN films

We investigate evolution of the magnetic penetration depth and superconducting energy gap in epitaxial NbN films using a low frequency mutual inductance technique and tunneling spectroscopy using a low temperature scanning tunneling microscope (STM). The superconducting transition temperature (Tc) for films grown under optimal growth conditions decreases monotonically from 15.87K to 9.16K as the film thickness is decreased from 50nm to 3nm. With decrease in film thickness delta(0) monotonically decreases, whereas lambda(0) monotonically increases. We observe that Tc, lambda(o) and delta(0) are well described by Bardeen-Cooper-Schrieffer (BCS) theory in all films other than the two thinnest ones where we see evidence of the Kosterlitz-Thouless-Berezinski (KTB) transition close to Tc.

preprint2010arXiv

Phase diagram and upper critical field of homogenously disordered epitaxial 3-dimensional NbN films

We report the evolution of superconducting properties with disorder, in 3-dimensional homogeneously disordered epitaxial NbN thin films. The effective disorder in NbN is controlled from moderately clean limit down to Anderson metal-insulator transition by changing the deposition conditions. We propose a phase diagram for NbN in temperature-disorder plane. With increasing disorder we observe that as kFl-->1 the superconducting transition temperature (Tc) and minimum conductivity (sigma_0) go to zero. The phase diagram shows that in homogeneously disordered 3-D NbN films, the metal-insulator transition and the superconductor-insulator transition occur at a single quantum critical point at kFl~1.

preprint2010arXiv

Phase fluctuations in a strongly disordered s-wave superconductor close to the metal-insulator transition

We explore the role of phase fluctuations in a 3-dimensional s-wave superconductor, NbN, as we approach the critical disorder for the destruction of the superconducting state. Scanning tunneling spectroscopy measurements reveal that in the presence of strong disorder, a finite gap in the electronic spectrum continues to persist at temperatures above Tc. With increase in disorder, the superfluid density is strongly suppressed at low temperatures and evolves towards a linear-T variation at higher temperatures. These observations provide strong evidence that phase fluctuation leads to the formation of a pseudogap state in a disordered conventional superconductor.