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Source author record

Viet Hung Nguyen

Viet Hung Nguyen appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallCryptography and Securitycond-mat.mtrl-sciData Structures and AlgorithmsDiscrete Mathematicsmath-phmath.APmath.MPmath.OCmath.PR

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Published work

14 published item(s)

preprint2016arXiv

Comment on arXiv:0709.3700 "Orientation dependence of the optical spectra in graphene at high frequencies"

Zhang et al. reported in [Phys. Rev. B 77, 241402(R) (2008)] a theoretical study of the optical spectra of monolayer graphene employing the Kubo formula within a tight-binding model. Their calculations predicted that at high frequencies the optical conductivity of graphene becomes strongly anisotropic. In particular, at frequencies comparable to the energy separation of the upper and lower bands at the $Γ$-point, the optical conductivity is strongly suppressed if the field polarization is along the zigzag direction while it is significantly high for the armchair one. We find that, unfortunately, this result is just a consequence of the incorrect determination of the current operator in k-space. Here, we present the standard scheme to obtain this operator correctly. As a result, we show that the optical conductivity of monolayer graphene is indeed isotropic, which is consistent with the results of other (both theoretical and experimental) studies in the literature.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Transport properties through graphene grain boundaries: strain effects versus lattice symmetry

As most materials available in macroscopic quantities, graphene appears in a polycrystalline form and thus contains grain boundaries. In the present work, the effect of uniaxial strain on the electronic transport properties through graphene grain boundaries is investigated using atomistic simulations. A systematic picture of the transport properties with respect to the strain and the lattice symmetry of graphene domains on both sides of the boundary is provided. In particular, it is shown that the strain engineering can be used to open a finite transport gap in all graphene systems where two domains exhibit different orientations. This gap value is found to depend on the strain magnitude, on the strain direction and on the lattice symmetry of graphene domains. By choosing appropriately the strain direction, a large transport gap of a few hundred meV can be achieved when applying a small strain of only a few percents. For a specific class of graphene grain boundary systems, the strain engineering can also be used to reduce the scattering on defects and hence to significantly enhance the conductance. With a large strain-induced gap, these graphene heterostructures are proposed to be possible candidates for highly sensitive strain sensors, flexible transistors and p-n junctions with a strong non-linear I-V characteristics.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Valley filtering and electronic optics using polycrystalline graphene

In this Letter, both the manipulation of valley-polarized currents and the optical-like behaviors of Dirac fermions are theoretically explored in polycrystalline graphene. When strain is applied, the misorientation between two graphene domains separated by a grain boundary can result in a mismatch of their electronic structures. Such a discrepancy manifests itself in a strong breaking of the inversion symmetry, leading to perfect valley polarization in a wide range of transmission directions. In addition, these graphene domains act as different media for electron waves, offering the possibility to modulate and obtain negative refraction indexes.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Enhanced Seebeck effect in graphene devices by strain and doping engineering

In this work, we investigate the possibility of enhancing the thermoelectric power (Seebeck coefficient) in graphene devices by strain and doping engineering. While a local strain can result in the misalignment of Dirac cones of different graphene sections in the k-space, doping engineering leads to their displacement in energy. By combining these two effects, we demonstrate that a conduction gap as large as a few hundreds meV can be achieved and hence the enhanced Seebeck coefficient can reach a value higher than 1.4 mV/K in graphene doped heterojunctions with a locally strained area. Such hetero-channels appear to be very promising for enlarging the applications of graphene devices as in strain and thermal sensors.

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preprint2015arXiv

Transport gap in vertical devices made of incommensurately misoriented graphene layers

By means of atomistic tight-binding calculations, we investigate the transport properties of vertical devices made of two incommensurately misoriented graphene layers. With a chosen transport direction (Ox-axis), we define two classes of rotated graphene lattice distinguished by the different properties of their lattice symmetry and, hence, Brillouin zone, i.e., the two Dirac cones are located either at the same $k_y$-point ($K_y' = K_y = 0$) or at different $k_y$-points ($K_y' = -K_y = 2π/3L_y$, where $L_y$ is the periodic length along the Oy axis). As a consequence, a misalignment of Dirac cones of two layers occurs and a significant energy-gap ($\sim$ a few hundreds of meV) of transmission is achieved in devices made of two layers of different lattice classes. We also shown that strain engineering can be used to strongly enlarge the gap in this type of device.

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preprint2014arXiv

Conduction gap in graphene strain junctions: direction dependence

It has been shown in a recent study [Nguyen et al., Nanotechnol. \textbf{25}, 165201 (2014)] that unstrained/strained graphene junctions are promising candidates to improve the performance of graphene transistors that is usually hindered by the gapless nature of graphene. Although the energy bandgap of strained graphene still remains zero, the shift of Dirac points in the \textbf{\emph{k}}-space due to strain-induced deformation of graphene lattice can lead to the appearance of a finite conduction gap of several hundreds meV in strained junctions with a strain of only a few percent. However, since it depends essentially on the magnitude of Dirac point shift, this conduction gap strongly depends on the direction of applied strain and the transport direction. In this work, a systematic study of conduction gap properties with respect to these quantities is presented and the results are carefully analyzed. Our study provides useful information for further investigations to exploit graphene strained junctions in electronic applications.

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preprint2014arXiv

Strain-induced conduction gap in vertical devices made of twisted graphene layers

We investigate the effects of uniaxial strain on the transport properties of vertical devices made of two twisted graphene layers, which partially overlap each other. We find that because of the different orientations of the two graphene lattices, their Dirac points can be displaced and separated in the $k-$space by the effects of strain. Hence, a finite conduction gap as large as a few hundred meV can be obtained in the device with a small strain of only a few percent. The dependence of this conduction gap on the strain strength, strain direction, transport direction and twist angle are clarified and presented. On this basis, the strong modulation of conductance and significant improvement of Seebeck coefficient are shown. The suggested devices therefore may be very promising for improving applications of graphene, e.g., as transistors or strain and thermal sensors.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Strain-induced modulation of Dirac cones and van Hove singularities in twisted graphene bilayer

By means of atomistic tight-binding calculations, we investigate the effects of uniaxial strain on the electronic bandstructure of twisted graphene bilayer. We find that the bandstructure is dramatically deformed and the degeneracy of the bands is broken by strain. As a conseqence, the number of Dirac cones can double and the van Hove singularity points are separated in energy. The dependence of these effects on the strength of strain, its applied direction and the twist angle is carefully clarified. As an important result, we demonstrate that the position of van Hove singularities can be modulated by strain, suggesting the possibility of observing this phenomenon at low energy in a large range of twist angle (i.e., larger than $10^\circ$). Unfortunately, these interesting/important phenomena have not been clarified in the previous works based on the continuum approximation. While they are in good agreement with available experiments, our results provide a detailed understanding of the strain effects on the electronic properties and may motivate other investigations of electronic transport in this type of graphene lattice.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Improved performance of graphene transistors by strain engineering

By means of numerical simulation, we study in this work the effects of uniaxial strain on transport properties of strained graphene heterojunctions and explore the possibility to achieve good performance of graphene transistors using these hetero-channels. It is shown that a finite conduction-gap can open in the strain junctions due to the strain-induced deformation of graphene bandstructure. These hetero-channels are then demonstrated to improve significantly the operation of graphene field-effect-transistors (FETs). In particular, ON/OFF current ratio can reach a value of over 10$^5$. In graphene normal FETs, transconductance, though reduced compared to the case of unstrained devices, is still high while good saturation of current can be obtained. This results in high voltage gain and high transition frequency of a few hundreds of GHz for a gate length of 80 nm. In graphene tunneling FETs, subthreshold swing lower than 30 mV/dec, strong non-linear effects such as gate controllable negative differential conductance, and current rectification are observed.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

The (Un)Reliability of NVD Vulnerable Versions Data: an Empirical Experiment on Google Chrome Vulnerabilities

NVD is one of the most popular databases used by researchers to conduct empirical research on data sets of vulnerabilities. Our recent analysis on Chrome vulnerability data reported by NVD has revealed an abnormally phenomenon in the data where almost vulnerabilities were originated from the first versions. This inspires our experiment to validate the reliability of the NVD vulnerable version data. In this experiment, we verify for each version of Chrome that NVD claims vulnerable is actually vulnerable. The experiment revealed several errors in the vulnerability data of Chrome. Furthermore, we have also analyzed how these errors might impact the conclusions of an empirical study on foundational vulnerability. Our results show that different conclusions could be obtained due to the data errors.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

An Independent Validation of Vulnerability Discovery Models

Having a precise vulnerability discovery model (VDM) would provide a useful quantitative insight to assess software security. Thus far, several models have been proposed with some evidence supporting their goodness-of-fit. In this work we describe an independent validation of the applicability of six existing VDMs in seventeen releases of the three popular browsers Firefox, Google Chrome and Internet Explorer. We have collected five different kinds of data sets based on different definitions of a vulnerability. We introduce two quantitative metrics, goodness-of-fit entropy and goodness-of-fit quality, to analyze the impact of vulnerability data sets to the stability as well as quality of VDMs in the software life cycles. The experiment result shows that the "confirmed-by-vendors' advisories" data sets apparently yields more stable and better results for VDMs. And the performance of the s-shape logistic model (AML) seems to be superior performance in overall. Meanwhile, Anderson thermodynamic model (AT) is indeed not suitable for modeling the vulnerability discovery process. This means that the discovery process of vulnerabilities and normal bugs are different because the interests of people in finding security vulnerabilities are more than finding normal programming bugs.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Disorder effects on energy bandgap and electronic transport in graphene-nanomesh-based structures

Using atomistic quantum simulation based on a tight binding model, we investigate the formation of energy gap Eg of graphene nanomesh (GNM) lattices and the transport characteristics of GNM-based electronic devices (single potential barrier structure and p-n junction) taking into account the atomic edge disorder of holes. We find that the sensitivity of Eg to the lattice symmetry (i.e., the lattice orientation and the hole shape) is significantly suppressed in the presence of the disorder. In the case of strong disorder, the dependence of Eg on the neck width is fitted well with the scaling rule observed in experiments [Liang et al., Nano Lett. 10, 2454 (2010)]. Considering the transport characteristics of GNM-based structures, we demonstrate that the use of finite GNM sections in the devices can efficiently improve their electrical performance (i.e., high ON/OFF current ratio, good current saturation and negative differential conductance behaviors). Additionally, if the length of GNM sections is appropriately limited, the detrimental effects of disorder on transport can be avoided to a large extent. Our study provides a good explanation of the available experimental data on GNM energy gap and should be helpful for further investigations of GNM-based devices.

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preprint2010arXiv

Approximating the minimum directed tree cover

Given a directed graph $G$ with non negative cost on the arcs, a directed tree cover of $G$ is a rooted directed tree such that either head or tail (or both of them) of every arc in $G$ is touched by $T$. The minimum directed tree cover problem (DTCP) is to find a directed tree cover of minimum cost. The problem is known to be $NP$-hard. In this paper, we show that the weighted Set Cover Problem (SCP) is a special case of DTCP. Hence, one can expect at best to approximate DTCP with the same ratio as for SCP. We show that this expectation can be satisfied in some way by designing a purely combinatorial approximation algorithm for the DTCP and proving that the approximation ratio of the algorithm is $\max\{2, \ln(D^+)\}$ with $D^+$ is the maximum outgoing degree of the nodes in $G$.

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