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Huy-Viet Nguyen

Huy-Viet Nguyen appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

5 published item(s)

preprint2016arXiv

Comment on arXiv:0709.3700 "Orientation dependence of the optical spectra in graphene at high frequencies"

Zhang et al. reported in [Phys. Rev. B 77, 241402(R) (2008)] a theoretical study of the optical spectra of monolayer graphene employing the Kubo formula within a tight-binding model. Their calculations predicted that at high frequencies the optical conductivity of graphene becomes strongly anisotropic. In particular, at frequencies comparable to the energy separation of the upper and lower bands at the $Γ$-point, the optical conductivity is strongly suppressed if the field polarization is along the zigzag direction while it is significantly high for the armchair one. We find that, unfortunately, this result is just a consequence of the incorrect determination of the current operator in k-space. Here, we present the standard scheme to obtain this operator correctly. As a result, we show that the optical conductivity of monolayer graphene is indeed isotropic, which is consistent with the results of other (both theoretical and experimental) studies in the literature.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Enhanced Seebeck effect in graphene devices by strain and doping engineering

In this work, we investigate the possibility of enhancing the thermoelectric power (Seebeck coefficient) in graphene devices by strain and doping engineering. While a local strain can result in the misalignment of Dirac cones of different graphene sections in the k-space, doping engineering leads to their displacement in energy. By combining these two effects, we demonstrate that a conduction gap as large as a few hundreds meV can be achieved and hence the enhanced Seebeck coefficient can reach a value higher than 1.4 mV/K in graphene doped heterojunctions with a locally strained area. Such hetero-channels appear to be very promising for enlarging the applications of graphene devices as in strain and thermal sensors.

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preprint2014arXiv

Conduction gap in graphene strain junctions: direction dependence

It has been shown in a recent study [Nguyen et al., Nanotechnol. \textbf{25}, 165201 (2014)] that unstrained/strained graphene junctions are promising candidates to improve the performance of graphene transistors that is usually hindered by the gapless nature of graphene. Although the energy bandgap of strained graphene still remains zero, the shift of Dirac points in the \textbf{\emph{k}}-space due to strain-induced deformation of graphene lattice can lead to the appearance of a finite conduction gap of several hundreds meV in strained junctions with a strain of only a few percent. However, since it depends essentially on the magnitude of Dirac point shift, this conduction gap strongly depends on the direction of applied strain and the transport direction. In this work, a systematic study of conduction gap properties with respect to these quantities is presented and the results are carefully analyzed. Our study provides useful information for further investigations to exploit graphene strained junctions in electronic applications.

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preprint2014arXiv

Enhanced thermoelectric figure of merit in vertical graphene junctions

In this work, we investigate thermoelectric properties of junctions consisting of two partially overlapped graphene sheets coupled to each other in the cross-plane direction. It is shown that because of the weak van-der Waals interactions between graphene layers, the phonon conductance in these junctions is strongly reduced, compared to that of single graphene layer structures, while their electrical performance is weakly affected. By exploiting this effect, we demonstrate that the thermoelectric figure of merit can reach values higher than 1 at room temperature in junctions made of gapped graphene materials, for instance, graphene nanoribbons and graphene nanomeshes. The dependence of thermoelectric properties on the junction length is also discussed. This theoretical study hence suggests an efficient way to enhance thermoelectric efficiency of graphene devices.

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preprint2014arXiv

Strain-induced conduction gap in vertical devices made of twisted graphene layers

We investigate the effects of uniaxial strain on the transport properties of vertical devices made of two twisted graphene layers, which partially overlap each other. We find that because of the different orientations of the two graphene lattices, their Dirac points can be displaced and separated in the $k-$space by the effects of strain. Hence, a finite conduction gap as large as a few hundred meV can be obtained in the device with a small strain of only a few percent. The dependence of this conduction gap on the strain strength, strain direction, transport direction and twist angle are clarified and presented. On this basis, the strong modulation of conductance and significant improvement of Seebeck coefficient are shown. The suggested devices therefore may be very promising for improving applications of graphene, e.g., as transistors or strain and thermal sensors.

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