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Researcher profile

Viera Skakalova

Viera Skakalova contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.app-ph

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Published work

6 published item(s)

preprint2022arXiv

Picometer-precision few-tilt ptychotomography of 2D materials

From ripples to defects, edges and grain boundaries, the 3D atomic structure of 2D materials is critical to their properties. However the damage inflicted by conventional 3D analysis precludes its use with fragile 2D materials, particularly for the analysis of local defects. Here we dramatically increase the potential for precise local 3D atomic structure analysis of 2D materials, with both greatly improved dose efficiency and sensitivity to light elements. We demonstrate light atoms can now be located in complex 2D materials with picometer precision at doses 30 times lower than previously possible. Moreover we demonstrate this using a material, WS$_2$, in which the light S atoms are in fact practically invisible to conventional methods. The key advance is combining the concept of few tilt tomography with highly dose efficient ptychography in scanning transmission electron microscopy. We further demonstrate the method experimentally with the even more challenging and newly discovered 2D CuI, leveraging a new extremely high temporal resolution camera.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electronic Transport in Composites of Graphite Oxide with Carbon Nanotubes

We show that the presence of electrically insulating graphite oxide (GO) within a single wall carbon nanotube network strongly enhances electrical conductivity, whereas reduced graphite oxide, even though electrically conductive, suppresses electrical conductivity within a composite network with single wall carbon nanotubes. Measurements of Young modulus and of Raman spectra strongly support our interpretation of the indirect role of the oxide groups, present in graphite oxide within the single wall carbon nanotubes/graphite oxide composite, through electronic doping of metallic single wall carbon nanotubes.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Transconductance fluctuations as a probe for interaction induced quantum Hall states in graphene

Transport measurements normally provide a macroscopic, averaged view of the sample, so that disorder prevents the observation of fragile interaction induced states. Here, we demonstrate that transconductance fluctuations in a graphene field effect transistor reflect charge localization phenomena on the nanometer scale due to the formation of a dot network which forms near incompressible quantum states. These fluctuations give access to fragile broken-symmetry and fractional quantum Hall states even though these states remain hidden in conventional magnetotransport quantities.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Raman Scattering at Pure Graphene Zigzag Edges

Theory has predicted rich and very distinct physics for graphene devices with boundaries that follow either the armchair or zigzag crystallographic directions. A prerequisite to disclose this physics in experiment is to be able to produce devices with boundaries of pure chirality. Exfoliated flakes frequently exhibit corners with an odd multiple of 30°, which raised expectations that their boundaries follow pure zigzag and armchair directions. The predicted Raman behavior at such crystallographic edges however failed to confirm pure edge chirality. Here, we perform confocal Raman spectroscopy on hexagonal holes obtained after the anisotropic etching of prepatterned pits using carbothermal decomposition of SiO2. The boundaries of the hexagonal holes are aligned along the zigzag crystallographic direction and leave hardly any signature in the Raman map indicating unprecedented purity of the edge chirality. This work offers the first opportunity to experimentally confirm the validity of the Raman theory for graphene edges.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Correlation between resistance fluctuations and temperature dependence of conductivity in graphene

The weak temperature dependence of the resistance R(T) of monolayer graphene1-3 indicates an extraordinarily high intrinsic mobility of the charge carriers. Important complications are the presence of mobile scattering centres that strongly modify charge transport, and the presence of strong mesoscopic conductance fluctuations that, in graphene, persist to relatively high temperatures4,5. In this Letter, we investigate the surprisingly varied changes in resistance that we find in graphene flakes as temperature is lowered below 70 K. We propose that these changes in R(T) arise from the temperature dependence of the scattered electron wave interference that causes the resistance fluctuations. Using the field effect transistor configuration, we verify this explanation in detail from measurements of R(T) by tuning to different gate voltages corresponding to particular features of the resistance fluctuations. We propose simple expressions that model R(T) at both low and high charge carrier densities.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Growth and properties of few-layer graphene prepared by chemical vapor deposition

The structure, and electrical, mechanical and optical properties of few-layer graphene (FLG) synthesized by chemical vapor deposition (CVD) on a Ni coated substrate were studied. Atomic resolution transmission electron microscope (TEM) images show highly crystalline single layer parts of the sample changing to multilayer domains where crystal boundaries are connected by chemical bonds. This suggests two different growth mechanisms. CVD and carbon segregation participate in the growth process and are responsible for the different structural formations found. Measurements of the electrical and mechanical properties on the centimeter scale provide evidence of a large scale structural continuity: 1) in the temperature dependence of the electrical conductivity, a non-zero value near 0 K indicates the metallic character of electronic transport; 2) the Young's modulus of a pristine polycarbonate film (1.37 GPa) improves significantly when covered with FLG (1.85 GPa). The latter indicates an extraordinary Young modulus value of the FLG-coating of TPa orders of magnitude. Raman and optical spectroscopy support the previous conclusions. The sample can be used as a flexible and transparent electrode and is suitable for special membranes to detect and study individual molecules in high resolution TEM.

0 citations0 reviewsNo code linkedOpen access