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Researcher profile

Klaus von Klitzing

Klaus von Klitzing contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

5 published item(s)

preprint2021arXiv

Competing correlated states around the zero field Wigner crystallization transition of electrons in two-dimensions

The competition between kinetic energy and Coulomb interactions in electronic systems can lead to complex many-body ground states with competing superconducting, charge density wave, and magnetic orders. Here we study the low temperature phases of a strongly interacting zinc-oxide-based high mobility two dimensional electron system that displays a tunable metal-insulator transition. Through a comprehensive analysis of the dependence of electronic transport on temperature, carrier density, in-plane and perpendicular magnetic fields, and voltage bias, we provide evidence for the existence of competing correlated metallic and insulating states with varying degrees of spin polarization. Our system features an unprecedented level of agreement with the state-of-the-art Quantum Monte Carlo phase diagram of the ideal jellium model, including a Wigner crystallization transition at a value of the interaction parameter $r_s\sim 30$ and the absence of a pure Stoner transition. In-plane field dependence of transport reveals a new low temperature state with partial spin polarization separating the spin unpolarized metal and the Wigner crystal, which we examine against possible theoretical scenarios such as an anti-ferromagnetic crystal, Coulomb induced micro-emulsions, and disorder driven puddle formation.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Acousto-electric study of microwave-induced current domains

Surface Acoustic Waves (SAW) have been utilized to investigate the properties of a two-dimensional electron system, subjected to a perpendicular magnetic field and monochromatic microwave radiation, in the regime where the so-called microwave-induced zero-resistance states form. Contrary to conventional magneto-transport in Hall bar and van der Pauw geometries, the collimated SAW beam probes only the bulk of the electronic system exposed to this wave. Clear signatures appear in the SAW propagation velocity corroborating that neither contacts, nor sample edges are a root source for their emergence. By virtue of the directional nature of this probing method and with the assistance of theoretical modelling, we were also able to demonstrate that the SAW response depends on the angle between its propagation vector and the orientation of domains which spontaneously form when zero-resistance is observed in transport. This confirms in unprecedented manner the formation of an inhomogeneous phase under these non-equilibrium conditions.

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preprint2011arXiv

Taking stock of the quantum Hall effects: Thirty years on

The quantum Hall effects, discovered about thirty years ago have remained one of the most spectacular discoveries in condensed matter physics in the past century. Those discoveries triggered huge expansion in the field of low-dimensional electronic systems, the area grew at an unprecedented rate and continues to expand. Novel and challenging observations, be it theoretical or experimental, have been reported since then on a regular basis. Additionally, the effects have inspired physicists to find analogous situations in far-flung fields as disparate as string theory or black hole physics.

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preprint2010arXiv

Band structure engineering of epitaxial graphene on SiC by molecular doping

Epitaxial graphene on SiC(0001) suffers from strong intrinsic n-type doping. We demonstrate that the excess negative charge can be fully compensated by non-covalently functionalizing graphene with the strong electron acceptor tetrafluorotetracyanoquinodimethane (F4-TCNQ). Charge neutrality can be reached in monolayer graphene as shown in electron dispersion spectra from angular resolved photoemission spectroscopy (ARPES). In bilayer graphene the band gap that originates from the SiC/graphene interface dipole increases with increasing F4-TCNQ deposition and, as a consequence of the molecular doping, the Fermi level is shifted into the band gap. The reduction of the charge carrier density upon molecular deposition is quantified using electronic Fermi surfaces and Raman spectroscopy. The structural and electronic characteristics of the graphene/F4-TCNQ charge transfer complex are investigated by X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). The doping effect on graphene is preserved in air and is temperature resistant up to 200\degree C. Furthermore, graphene non-covalent functionalization with F4-TCNQ can be implemented not only via evaporation in ultra-high vacuum but also by wet chemistry.

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preprint2010arXiv

Hot Phonons in an Electrically Biased Graphene Constriction

Phonon carrier interactions can have significant impact on device performance. They can be probed by measuring the phonon lifetime, which reflects the interaction strength of a phonon with other quasi-particles in particular charge carriers as well as its companion phonons. The carrier phonon and phonon-phonon contributions to the phonon lifetime can be disentangled from temperature dependent studies. Here, we address the importance of phonon carrier interactions in Joule-heated graphene constrictions in order to contribute to the understanding of energy dissipation in graphene based electronic devices. We demonstrate that gapless graphene grants electron phonon interactions uncommon significance in particular at low carrier density. In conventional semiconductors, the bandgap usually prevents the decay of phonons through electron-hole generation and also in metals or other semimetals the Fermi temperature is excessively large to enter the regime where electron phonon coupling plays such a dominant role as in graphene in the investigated phonon temperature regime from 300 to 1600 K.

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