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Source author record

Klaus von Klitzing

Klaus von Klitzing appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

11 published item(s)

preprint2021arXiv

Competing correlated states around the zero field Wigner crystallization transition of electrons in two-dimensions

The competition between kinetic energy and Coulomb interactions in electronic systems can lead to complex many-body ground states with competing superconducting, charge density wave, and magnetic orders. Here we study the low temperature phases of a strongly interacting zinc-oxide-based high mobility two dimensional electron system that displays a tunable metal-insulator transition. Through a comprehensive analysis of the dependence of electronic transport on temperature, carrier density, in-plane and perpendicular magnetic fields, and voltage bias, we provide evidence for the existence of competing correlated metallic and insulating states with varying degrees of spin polarization. Our system features an unprecedented level of agreement with the state-of-the-art Quantum Monte Carlo phase diagram of the ideal jellium model, including a Wigner crystallization transition at a value of the interaction parameter $r_s\sim 30$ and the absence of a pure Stoner transition. In-plane field dependence of transport reveals a new low temperature state with partial spin polarization separating the spin unpolarized metal and the Wigner crystal, which we examine against possible theoretical scenarios such as an anti-ferromagnetic crystal, Coulomb induced micro-emulsions, and disorder driven puddle formation.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Acousto-electric study of microwave-induced current domains

Surface Acoustic Waves (SAW) have been utilized to investigate the properties of a two-dimensional electron system, subjected to a perpendicular magnetic field and monochromatic microwave radiation, in the regime where the so-called microwave-induced zero-resistance states form. Contrary to conventional magneto-transport in Hall bar and van der Pauw geometries, the collimated SAW beam probes only the bulk of the electronic system exposed to this wave. Clear signatures appear in the SAW propagation velocity corroborating that neither contacts, nor sample edges are a root source for their emergence. By virtue of the directional nature of this probing method and with the assistance of theoretical modelling, we were also able to demonstrate that the SAW response depends on the angle between its propagation vector and the orientation of domains which spontaneously form when zero-resistance is observed in transport. This confirms in unprecedented manner the formation of an inhomogeneous phase under these non-equilibrium conditions.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Negative permittivity attests to local attractive interactions in bubble and stripe phases

The physics of itinerant electrons in condensed matter is by and large governed by repulsive Coulomb forces. However, rare cases exist where local attractive interactions emerge and prevail in determining the ground state of the system despite the dominant Coulomb repulsion. The most notable example is no doubt electron pairing, which leads to superconductivity and is mediated by electron phonon coupling or more intricate mechanisms such as antiferromagnetic spin order in high-temperature superconductors. The interplay of attractive and repulsive interaction components may also instigate spontaneous symmetry lowering and clustering of charges in geometric patterns such as bubbles and stripes, provided these interactions act on different length scales. In high-temperature superconductors, for instance, fluctuating stripe or nematic ordering is intertwined with superconductivity itself. Both types of attractive interaction based physics, pairing and charge ordering, are also at play in high-quality two-dimensional electron systems exposed to a quantizing perpendicular magnetic field for electrons describing larger orbits. This has been concluded indirectly from the transport behaviour when such phases form. An unambiguous manifestation of an underlying attractive interaction between the electrons has however remained elusive. Here we report the observation of a negative permittivity as an immediate consequence of local attractive interaction rather than repulsion among the electrons when bubble and stripe phases form. The implemented technique based on surface acoustic waves offers directionality and confirms the stripe phase to be a strongly anisotropic medium.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Disorder Enhanced Nuclear Spin Relaxation at Landau Level Filling Factor One

The nuclear spin relaxation rate (1/$T_1$) is measured for GaAs two-dimensional electron systems in the quantum Hall regime with an all-electrical technique for agitating and probing the nuclear spins. A "tilted plateau" feature is observed near the Landau level filling factor $ν=1$ in 1/$T_1$ versus $ν$. Both width and magnitude of the plateau increase with decreasing electron density. At low temperatures, 1/$T_1$ exhibits an Arrhenius temperature dependence within the tilted plateau regime. The extracted energy gaps are up to two orders of magnitude smaller than the corresponding charge transport gaps. These results point to a nontrivial mechanism for the disorder enhanced nuclear spin relaxation, in which microscopic inhomogeneities play a key role for the low energy spin excitations related to skyrmions.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Interplay between the coherent and incoherent transport in quantum Hall bilayers

We systematically study the coherent transport (Josephson tunneling and counterflow current) and its breakdown which leads to incoherent charge flow in in the excitonic BCS condensate formed in GaAs bilayers at $ν_{tot}=1/2+1/2$. The Josephson currents in samples with three different interlayer distances vary by four orders of magnitude. In contrast, the breakdown thresholds for the $ν_{tot}=1$ quantum Hall state are comparable. Furthermore, Coulomb drag in a Corbino ring reveals that the coherent counterflow current coexists with the dissipative charge transport.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Transconductance fluctuations as a probe for interaction induced quantum Hall states in graphene

Transport measurements normally provide a macroscopic, averaged view of the sample, so that disorder prevents the observation of fragile interaction induced states. Here, we demonstrate that transconductance fluctuations in a graphene field effect transistor reflect charge localization phenomena on the nanometer scale due to the formation of a dot network which forms near incompressible quantum states. These fluctuations give access to fragile broken-symmetry and fractional quantum Hall states even though these states remain hidden in conventional magnetotransport quantities.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Taking stock of the quantum Hall effects: Thirty years on

The quantum Hall effects, discovered about thirty years ago have remained one of the most spectacular discoveries in condensed matter physics in the past century. Those discoveries triggered huge expansion in the field of low-dimensional electronic systems, the area grew at an unprecedented rate and continues to expand. Novel and challenging observations, be it theoretical or experimental, have been reported since then on a regular basis. Additionally, the effects have inspired physicists to find analogous situations in far-flung fields as disparate as string theory or black hole physics.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Band structure engineering of epitaxial graphene on SiC by molecular doping

Epitaxial graphene on SiC(0001) suffers from strong intrinsic n-type doping. We demonstrate that the excess negative charge can be fully compensated by non-covalently functionalizing graphene with the strong electron acceptor tetrafluorotetracyanoquinodimethane (F4-TCNQ). Charge neutrality can be reached in monolayer graphene as shown in electron dispersion spectra from angular resolved photoemission spectroscopy (ARPES). In bilayer graphene the band gap that originates from the SiC/graphene interface dipole increases with increasing F4-TCNQ deposition and, as a consequence of the molecular doping, the Fermi level is shifted into the band gap. The reduction of the charge carrier density upon molecular deposition is quantified using electronic Fermi surfaces and Raman spectroscopy. The structural and electronic characteristics of the graphene/F4-TCNQ charge transfer complex are investigated by X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). The doping effect on graphene is preserved in air and is temperature resistant up to 200\degree C. Furthermore, graphene non-covalent functionalization with F4-TCNQ can be implemented not only via evaporation in ultra-high vacuum but also by wet chemistry.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Hot Phonons in an Electrically Biased Graphene Constriction

Phonon carrier interactions can have significant impact on device performance. They can be probed by measuring the phonon lifetime, which reflects the interaction strength of a phonon with other quasi-particles in particular charge carriers as well as its companion phonons. The carrier phonon and phonon-phonon contributions to the phonon lifetime can be disentangled from temperature dependent studies. Here, we address the importance of phonon carrier interactions in Joule-heated graphene constrictions in order to contribute to the understanding of energy dissipation in graphene based electronic devices. We demonstrate that gapless graphene grants electron phonon interactions uncommon significance in particular at low carrier density. In conventional semiconductors, the bandgap usually prevents the decay of phonons through electron-hole generation and also in metals or other semimetals the Fermi temperature is excessively large to enter the regime where electron phonon coupling plays such a dominant role as in graphene in the investigated phonon temperature regime from 300 to 1600 K.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Raman Scattering at Pure Graphene Zigzag Edges

Theory has predicted rich and very distinct physics for graphene devices with boundaries that follow either the armchair or zigzag crystallographic directions. A prerequisite to disclose this physics in experiment is to be able to produce devices with boundaries of pure chirality. Exfoliated flakes frequently exhibit corners with an odd multiple of 30°, which raised expectations that their boundaries follow pure zigzag and armchair directions. The predicted Raman behavior at such crystallographic edges however failed to confirm pure edge chirality. Here, we perform confocal Raman spectroscopy on hexagonal holes obtained after the anisotropic etching of prepatterned pits using carbothermal decomposition of SiO2. The boundaries of the hexagonal holes are aligned along the zigzag crystallographic direction and leave hardly any signature in the Raman map indicating unprecedented purity of the edge chirality. This work offers the first opportunity to experimentally confirm the validity of the Raman theory for graphene edges.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Raman spectra of epitaxial graphene on SiC and of epitaxial graphene transferred to SiO2

Raman spectra were measured for mono-, bi- and trilayer graphene grown on SiC by solid state graphitization, whereby the number of layers was pre-assigned by angle-resolved ultraviolet photoemission spectroscopy. It was found that the only unambiguous fingerprint in Raman spectroscopy to identify the number of layers for graphene on SiC(0001) is the linewidth of the 2D (or D*) peak. The Raman spectra of epitaxial graphene show significant differences as compared to micromechanically cleaved graphene obtained from highly oriented pyrolytic graphite crystals. The G peak is found to be blue-shifted. The 2D peak does not exhibit any obvious shoulder structures but it is much broader and almost resembles a single-peak even for multilayers. Flakes of epitaxial graphene were transferred from SiC onto SiO2 for further Raman studies. A comparison of the Raman data obtained for graphene on SiC with data for epitaxial graphene transferred to SiO2 reveals that the G peak blue-shift is clearly due to the SiC substrate. The broadened 2D peak however stems from the graphene structure itself and not from the substrate.

0 citations0 reviewsNo code linkedOpen access