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Victor Pardo

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21works
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21 publications

preprint2022arXiv

Antiferromagnetic insulating state in layered nickelates at half-filling

We provide a set of computational experiments based on \textit{ab initio} calculations to elucidate whether a cuprate-like antiferromagnetic insulating state can be present in the phase diagram of the low-valence layered nickelate family (Rn+1_{n+1}Nin_nO2n+2_{2n+2}, R= rare-earth, n=1−∞n=1-\infty) in proximity to half-filling. It is well established that at d9d^9 filling the infinite-layer (n=∞n=\infty) nickelate is metallic, in contrast to cuprates wherein an antiferromagnetic insulator is expected. We show that for the Ruddlesden-Popper (RP) reduced phases of the series (finite nn) an antiferromagnetic insulating ground state can naturally be obtained instead at d9d^9 filling, due to the spacer RO2_2 fluorite slabs present in their structure that block the cc-axis dispersion. In the n=∞n=\infty nickelate, the same type of solution can be derived if the off-plane R-Ni coupling is suppressed. We show how this can be achieved if a structural element that cuts off the cc-axis dispersion is introduced (i.e. vacuum in a monolayer of RNiO2_2, or a blocking layer in multilayers formed by (RNiO2_2)1_1/(RNaO2_2)1_1).

preprint2022arXiv

Low Valence Nickelates: Launching the Nickel Age of Superconductivity

The discovery of superconductivity in thin films (∼\sim10 nm) of infinite-layer hole-doped NdNiO2_2 has invigorated the field of high-temperature superconductivity research, reviving the debate over contrasting views that nickelates that are isostructural with cuprates are either (1) sisters of the high-temperature superconductors, or (2) that differences between nickel and copper at equal band filling should be the focus of attention. Each viewpoint has its merits, and each has its limitations, suggesting that such a simple picture must be superseded by a more holistic comparison of the two classes. Several recent studies have begun this generalization, raising a number of questions without suggesting any consensus. In this paper, we organize the findings of the electronic structures of nn-layered NiO2_2 materials (nn= 1 to ∞\infty) to outline (ir)regularities and to make comparisons with cuprates, with the hope that important directions of future research will emerge.

preprint2020arXiv

Absence of ferromagnetism in VSe2_2 caused by its charge density wave phase

How magnetism emerges in low-dimensional materials such as transition metal dichalcogenides at the monolayer limit is still an open question. Herein, we present a comprehensive study of the magnetic properties of single crystal and monolayer VSe2_{2}, both experimentally and \emph{ab initio}. Magnetometry, X-ray magnetic circular dichrosim (XMCD) and \emph{ab initio} calculations demonstrate that the charge density wave in bulk stoichiometric VSe2.0_{2.0} causes a structural distortion with a strong reduction in the density of sates at the Fermi level, prompting the system towards a non-magnetic state but on the verge of a ferromagnetic instability. In the monolayer limit, the structural rearrangement induces a Peierls distortion with the opening of an energy gap at the Fermi level and the absence of magnetic order. Control experiments on defect-induced VSe2−δ_{2-δ} single crystals show a breakdown of magnetism, discarding vacancies as a possible origin of magnetic order in VSe2_{2}.

preprint2020arXiv

Effects of Sr-doping on the electronic and spin-state properties of infinite-layer nickelates

The recent discovery of high-Tc_{c} superconductivity (HTS) in Sr-doped NdNiO2_2 has sparked a renewed interest in investigating nickelates as cuprate counterparts. Parent cuprates [Cu2+^{2+}: d9^9] are antiferromagnetic charge-transfer insulators with the involvement of a single dx2−y2_{x^2-y^2} band around the Fermi level and strong p−dp-d hybridization. In contrast, isoelectronic NdNiO2_2 [Ni+^+: d9^9] is metallic with a dx2−y2_{x^2-y^2} band self-doped by Nd-d states. Using first-principles calculations, we study the effect of Sr-doping in the electronic and magnetic properties of infinite-layer nickelates as well as the nature of the holes. We find that hole doping tends to make the material more cuprate-like as it minimizes the self-doping effect, it enhances the p−dp-d hybridization, and it produces low-spin (S=0, non-magnetic) Ni2+^{2+} dopants in analogy with the S=0 Zhang-Rice singlets that appear in cuprates.

preprint2020arXiv

Electronic structure and magnetic exchange interactions of Cr-based van der Waals ferromagnets. A comparative study between CrBr3 and Cr2Ge2Te6

Low dimensional magnetism has been powerfully boosted as a promising candidate for numerous applications. The stability of the long-range magnetic order is directly dependent on the electronic structure and the relative strength of the competing magnetic exchange constants. Here, we report a comparative pressure-dependent theoretical and experimental study of the electronic structure and exchange interactions of two-dimensional ferromagnets CrBr3 and Cr2Ge2Te6 . While CrBr3 is found to be a Mott-Hubbard-like insulator, Cr2Ge2Te6 shows a charge-transfer character due to the broader character of the Te 5p bands at the Fermi level. This different electronic behaviour is responsible of the robust insulating state of CrBr3 , in which the magnetic exchange constants evolve monotonically with pressure, and the proximity to a metal-insulator transition predicted for Cr2Ge2Te6 , which causes a non-monotonic evolution of its magnetic ordering temperature. We provide a microscopic understanding for the pressure evolution of the magnetic properties of the two systems.

preprint2020arXiv

Understanding the lattice thermal conductivity of SrTiO3 from an ab initio perspective

We present a detailed analysis of the structure dependence of the lattice thermal conductivity of SrTiO3. We have used both ab initio Molecular Dynamic simulations and Density Functional Theory calculations to decouple the effect of different structural distortions on the thermal conductivity. We have identified two main mechanisms for tuning the thermal conductivity when a distortion is applied. First, the modification of the acoustic-modes energy dispersion when a change in the lattice parameters is imposed and second, the low energy polar modes. In particular and counterintuitively, we have found that an increase in the angle of the oxygen octahedral rotations increases the thermal conductivity due to its coupling to these polar modes.

preprint2016arXiv

Efficient thermoelectric materials using nonmagnetic double perovskites with d0d^0/d6d^6 band filling

Efficient thermoelectric materials should present large Seebeck coefficient, high electrical conductivity and low thermal conductivity. An enhanced Seebeck coefficient can be obtained from materials where the Fermi level can be aligned with a large and narrow peak of the density of states, particularly when a substantial band valley degeneracy occurs. A high electrical conductivity comes as a consequence of large conductive hopping paths between the atoms of the material. Both physical quantities can be decoupled and optimized independently if their origins can be ascribed to different sets of bands. Based on these assumptions, double perovskites A2_2BB'O6_6 with d0/d6d^0/d^6 filling for the B and B' metal cations, respectively, have been considered. They provide a desirable band structure with degenerate B-t2gt_{2g} / B'-ege_g bands above the Fermi level together with a low thermal conductivity. We have carried out first-principles simulations for various of these nonmagnetic double perovskites and showed that all of them present a large Seebeck coefficient (consequence of the localized and empty t2gt_{2g} states of the B-cation), and large electrical conductivity due to the more spread unoccupied ege_{g} band of the B' cation. We have seen that if they can be optimally doped, they could show a figure of merit comparable or even higher than the best nn-type thermoelectric oxides, such as SrTiO3_{3}. Different mechanisms to tune the band structure and enhance the thermoelectric figure of merit are explored, including epitaxial strain, hydrostatic pressure, chemical pressure, and external doping. A fully relaxed structure has also been studied, showing that a realistic calculation is necessary to make accurate predictions, but also proving that the main trends shown throughout the paper remain unchanged.

preprint2016arXiv

Nitride Multilayers as a Platform for Parallel Two-Dimensional Electron-Hole Gases: MgO/ScN(111)

At interfaces between insulating oxides LaAlO3_3 and SrTiO3_3, a two dimensional electron gas (2DEG) has been observed and well studied, while the predicted hole gas (2DHG) has not been realized due to the strong tendency of holes in oxygen 2p2p orbitals to localize. Here we propose, via ab initio calculations, an unexplored class of materials for the realization of parallel two dimensional (2D), two carrier (electron+hole) gases: nitride-oxide heterostructures, with (111)-oriented ScN and MgO as the specific example. Beyond a critical thickness of five ScN layers, this interface hosts spatially separated conducting Sc-3d3d electrons and N-2p2p holes, each confined to ∼\simtwo atomic layers -- the transition metal nitride provides both gases. A guiding concept is that the N3−^{3-} anion should promote robust two carrier 2D hole conduction compared to that of O2−^{2-}; metal mononitrides are mostly metallic and even superconducting while most metal monoxides are insulating. A second positive factor is that the density of transition metal ions, hence of a resulting 2DG, is about three times larger for a rocksalt (111) interface than for a perovskite(001) interface. Our results, including calculation of Hall coefficient and thermopower for each conducting layer separately, provide guidance for new exploration, both experimental and theoretical, on nitride-based conducting gases that should promote study of long sought exotic states viz. new excitonic phases and distinct, nanoscale parallel superconducting nanolayers.

preprint2015arXiv

Ab initio study of nontrivial topological phases in corundum structured ((M2_2O3)/(_3)/(Al2_2O3)5_3)_5 multilayers

\textit{Ab initio} calculations have been performed on hexagonal layers of M2_2O3_3 (M being several transition metals of the 5d5d series) sandwiched by a band insulator such as Al2_2O3_3 that provides the honeycomb lattice where the 5d5d electrons reside. This corundum-structure-based superlattice is the most obvious way to design a honeycomb lattice with transition metal cations avoiding the use of largely polar surfaces. We obtain that this system supports the presence of Dirac cones at the Fermi level that open up with the introduction of spin-orbit coupling at various fillings of the 5d5d band. The DFT calculations performed in this work show that the 5d55d^5 situation is always a trivial insulator, whereas the 5d85d^8 filling presents topological insulating configurations which evolve into a trivial state with increasing tensile strain or on-site Coulomb potential U. However, LDA+U calculations show a stable antiferromagnetic solution for the 5d85d^8 case at every U value, which would break time reversal symmetry and could affect the topological properties of the system. We also discuss the similarities with the buckled honeycomb lattice obtained using perovskite (111) bilayers previously studied in literature, in particular for the 5d55d^5 and 5d85d^8 configurations. This work provides some clues on the stability of topological phases using metal oxides in general.

preprint2014arXiv

Charge ordering at the interface in (LaMnO3_3)2n_{2n}/(SrMnO3_3)n_n superlattices as the origin of their insulating state

We have performed ab initio calculations within the LDA+U method in the multilayered system (LaMnO3_3)2n_{2n} / (SrMnO3_3)n_n. Our results suggest a charge-ordered state that alternates Mn3+^{3+} and Mn4+^{4+} cations in a checkerboard in-plane pattern is developed at the interfacial layer, leading to a gap opening. Such an interfacial charge-ordered situation would be the energetically favored reconstruction between LaMnO3_3 and SrMnO3_3. This helps understanding the insulating behavior observed experimentally in these multilayers at intermediate values of nn, whose origin is known to be due to some interfacial mechanism.

preprint2013arXiv

Strain effects to optimize the thermoelectric properties of hole-doped La2_2NiO4+δ_{4+δ} via ab initio calculations

Thermoelectric properties of the system La2_2NiO4+δ_{4+δ} have been recently discussed [Phys. Rev. B 86, 165114 (2012)] via ab initio calculations. An optimum hole-doping value was obtained with reasonable thermopower and thermoelectric figure of merit being calculated. Here, a large increase in the thermoelectric performance through lattice strain and the corresponding atomic relaxations is predicted. This increase would be experimentally attainable via growth in thin films of the material on top of different substrates. A small tensile strain would produce large thermoelectric figures of merit at high temperatures, zTzT ∼\sim 1 in the range of oxygen excess δδ ∼\sim 0.05 - 0.10 and in-plane lattice parameter in the range 3.95 - 4.05 Å. In that relatively wide range of parameters, thermopower values close to 200 μμV/K are obtained. The best performance of this compound is expected to occur in the high temperature limit.

preprint2012arXiv

Enhanced thermoelectric response of hole-doped La2_2NiO4+δ_{4+δ} by ab initio calculations

Thermoelectric properties of the system La2_2NiO4+δ_{4+δ} have been studied ab initio. Large Seebeck coefficient values are predicted for the parent compound, and to some extent remain in the hole-doped metallic phase, accompanied of an increase in the conductivity. This system, due to its layered structure would be a suitable candidate for an improvement of its thermoelectric figure of merit by nanostructurization in thin films, that has already been shown to increase the electrical conductivity (σσ). Our calculations show that in the region around La2_2NiO4.05_{4.05} the system has a large thermopower at high temperatures and also a substantially increased σσ. Films grown with this low-doping concentration will show an optimal relationship between thermopower and σσ. This result is obtained for various exchange-correlation schemes (correlated, uncorrelated and parameter-free) that we use to analyze the electronic structure of the hole-doped compound.

preprint2012arXiv

Formal Valence, dd Occupation, and Charge-Order Transitions

While the formal valence and charge state concepts have been tremendously important in materials physics and chemistry, their very loose connection to actual charge leads to uncertainties in modeling behavior and interpreting data. We point out, taking several transition metal oxides (La2_2VCuO6_6, YNiO3_3, CaFeO3_3, AgNiO2_2, V4_4O7_7) as examples, that while dividing the crystal charge into atomic contributions is an ill-posed activity, the 3d occupation of a cation (and more particularly, differences) is readily available in first principles calculations. We discuss these examples, which include distinct charge states and charge-order (or disproportionation) systems, where different "charge states" of cations have identical 3d orbital occupation. Implications for theoretical modeling of such charge states and charge-ordering mechanisms are discussed.

preprint2011arXiv

Evaluation of Compensated Magnetism in La2_2VCuO6_6: Exploration of Charge States

We present an ab initio study of double perovskite La2_2VCuO6_6, which was one of the earliest compounds suggested as a potential compensated half-metal. Two charge and spin configurations close in energy have been identified. (i) The originally envisioned spin-compensated V4+^{4+}:d1^1/Cu2+^{2+}:d1^1 configuration is comprised of antialigned S=1/2 cations. This state is a spin-compensated half-metal for moderate values of U (the on-site Coulomb repulsion strength on the metal ions) and is insulating for larger values of U. (ii) An unanticipated non-magnetic solution V5+^{5+}:d0^0/Cu+^{+}:d10^{10} consists of an empty- and a full-shell ion, both spherically symmetric, that leads to a band insulator. This ionic band insulator is calculated to be the ground state at small and moderate values of U. The different distortions of the perovskite structure that occur for each state are central in determining the energy differences. Treating the Cu2+^{2+} Jahn-Teller distortion self-consistently is particularly important for the magnetic solution.

preprint2011arXiv

Metal-insulator transition in layered nickelates La3_3Ni2_2O7−δ_{7-δ} (δδ=0.0, 0.5, 1)

Three low-valence layered nickelates with general formula La3_3Ni2_2O7−δ_{7-δ} (δδ=0.0, 0.5, 1) are studied by ab initio techniques. Both the insulating and metallic limits are analyzed, together with the compound at the Mott transition (δδ= 0.5; Ni2+^{2+}), that shows insulating behavior, with all Ni atoms in a S=1 high-spin state. The compound in the δδ= 1 limit (La3_3Ni2_2O6_6), with mean formal valence Ni1.5+^{1.5+} and hence nominally metallic, nevertheless shows a correlated {\it molecular} insulating state, produced by the quantum confinement of the NiO2_2 bilayers and the presence of mainly dz2_{z^2} bands (bonding-antibonding split) around the gap. The metallic compound shows a larger bandwidth of the eg_g states that can sustain the experimentally observed paramagnetic metallic properties. The evolution of the in-plane antiferromagnetic coupling with the oxygen content is discussed, and also the similarities of this series of compounds with the layered superconducting cuprates.

preprint2011arXiv

Pressure-induced metal-insulator and spin-state transition in low-valence layered nickelates

Ab initio calculations predict a metal-insulator transition at zero temperature to occur in La4_4Ni3_3O8_8 at moderate pressures as a result of a pressure-induced spin-state transition. The spin-state transition that is seen at 105 K at ambient pressure from a low-temperature high-spin state to a high-temperature low-spin state has been observed to be shifted to lower temperatures as pressure is applied. From our calculations we find that a smaller unit cell volume favors the metallic low-spin state, which becomes more stable at 5 GPa. Similar physics should take place in the related compound La3_3Ni2_2O6_6, but on a different energy scale, which may account for why the transition has not been observed in this material.

preprint2010arXiv

Electron Confinement, Orbital Ordering, and Orbital Moments in d0d^0-d1d^1 Oxide Heterostructures

The (SrTiO3_3)m_m/(SrVO3_3)n_n d0−d1d^0-d^1 multilayer system is studied with first principles methods through the observed insulator-to-metal transition with increasing thickness of the SrVO3_3 layer. When correlation effects with reasonable magnitude are included, crystal field splittings from the structural relaxations together with spin-orbit coupling (SOC) determines the behavior of the electronic and magnetic structures. These confined slabs of SrVO3_3 prefer QorbQ_{orb}=(π,ππ,π) orbital ordering of ℓz=0\ell_z = 0 and ℓz=−1\ell_z = -1 (jz=−1/2j_z=-1/2) orbitals within the plane, accompanied by QspinQ_{spin}=(0,0) spin order (ferromagnetic alignment). The result is a SOC-driven ferromagnetic Mott insulator. The orbital moment of 0.75 μBμ_B strongly compensates the spin moment on the ℓz=−1\ell_z = -1 sublattice. The insulator-metal transition for n=1→5n = 1 \to 5 (occurring between nn=4 and nn=5) is reproduced. Unlike in the isoelectronic d0−d1d^0-d^1 TiO2_2/VO2_2 (rutile structure) system and in spite of some similarities in orbital ordering, no semi-Dirac point [{\it Phys. Rev. Lett.} {\bf 102}, 166803 (2009)] is encountered, but the insulator-to-metal transition occurs through a different type of unusual phase. For n=5 this system is very near (or at) a unique semimetallic state in which the Fermi energy is topologically determined and the Fermi surface consists of identical electron and hole Fermi circles centered at kk=0. The dispersion consists of what can be regarded as a continuum of radially-directed Dirac points, forming a "Dirac circle".

preprint2010arXiv

Quantum Confinement Induced Molecular Mott Insulating State in La4_4Ni3_3O8_8

The recently synthesized layered nickelate La4_4Ni3_3O8_8, with its cuprate-like NiO2_2 layers, seemingly requires a Ni1 (d8d^8)+2Ni2 (d9d^9) charge order, together with strong correlation effects, to account for its insulating behavior. Using density functional methods including strong intra-atomic repulsion (Hubbard U), we obtain an insulating state via a new mechanism: {\it without charge order}, Mott insulating behavior arises based on quantum coupled, spin-aligned Ni2-Ni1-Ni2 dz2d_{z^2} states across the trilayer (rather than based on atomic states), with antiferromagnetic ordering within layers. The weak and frustrated magnetic coupling between cells may account for the small spin entropy that is removed at the Néel transition at 105 K and the lack of any diffraction peak at the Néel point.

preprint2009arXiv

Compensated magnetism by design in double perovskite oxides

Taking into account Goodenough's superexchange rules, including both full structural relaxation and spin-orbit coupling, and checking strong correlation effects, we look for compensated half metals within the class of oxide double perovskites materials. Identifying likely half metallic (or half semimetallic) antiferromagnets, the full complications including orbital magnetism are included in order to arrive at realistic predictions of designed magnetic compounds with (near) vanishing net moment. After sorting through several candidates that have not been considered previously, two materials, K2_2MnRhO6_6 and La2_2CrWO6_6, remain as viable candidates. An important factor is obtaining compounds either with very small induced orbital moment (helped by closed subshells) or with an orbital moment that compensates the spin-orbit driven degradation of half metallic character. While thermodynamic stability of these materials cannot be ensured, the development of layer-by-layer oxide deposition techniques does not require that materials be thermodynamically stable to be synthesized.

preprint2009arXiv

Half-metallic semiDirac point generated by quantum confinement in TiO2_2/VO2_2 nanostructures

Multilayer VO2_2/TiO2_2 nanostructures (d1d^1 - d0d^0 interfaces with no polar discontinuity) are studied with first principles density functional methods including structural relaxation. Quantum confinement of the {\it half metallic} VO2_2 slab within insulating TiO2_2 produces an unexpected and unprecendented two-dimensional new state, with a {\it semiDirac} point Fermi surface: spinless charge carriers are effective-mass like along one principal axis, but are massless along the other. Effects of interface imperfection are addressed.

preprint2009arXiv

Metal-insulator transition through a semi-Dirac point in oxide nanostructures: VO2_2 (001) layers confined within TiO2_2

Multilayer (TiO2_2)m_m/(VO2_2)n_n nanostructures (d1d^1 - d0d^0 interfaces with no polar discontinuity) show a metal-insulator transition with respect to the VO2_2 layer thickness in first principles calculations. For nn ≥\geq 5 layers, the system becomes metallic, while being insulating for nn = 1 and 2. The metal-insulator transition occurs through a semi-Dirac point phase for nn = 3 and 4, in which the Fermi surface is point-like and the electrons behave as massless along the zone diagonal in k-space and as massive fermions along the perpendicular direction. We provide an analysis of the evolution of the electronic structure through this unprecedented insulator-to-metal transition, and identify it as resulting from quantum confinement producing a non-intuitive orbital ordering on the V d1d^1 ions, rather than being a specific oxide interface effect. Spin-orbit coupling does not destroy the semi-Dirac point for the calculated ground state, where the spins are aligned along the rutile c-axis, but it does open a substantial gap if the spins lie in the basal plane.

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