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Victor Erokhin

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Emerging Technologies physics.chem-ph cond-mat.mtrl-sci Hardware Architecture

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preprint2022arXiv

Neuropunk Revolution. Hacking Cognitive Systems towards Cyborgs 3.0

This work is dedicated to the review and perspective of the new direction that we call "Neuropunk revolution" resembling the cultural phenomenon of cyberpunk. This new phenomenon has its foundations in advances in neuromorphic technologies including memristive and bio-plausible simulations, BCI, and neurointerfaces as well as unconventional approaches to AI and computing in general. We present the review of the current state-of-the-art and our vision of near future development of scientific approaches and future technologies. We call the "Neuropunk revolution" the set of trends that in our view provide the necessary background for the new generation of approaches technologies to integrate the cybernetic objects with biological tissues in close loop system as well as robotic systems inspired by the biological processes again integrated with biological objects. We see bio-plausible simulations implemented by digital computers or spiking networks memristive hardware as promising bridge or middleware between digital and (neuro)biological domains.

preprint2014arXiv

The Short-term Memory (D.C. Response) of the Memristor Demonstrates the Causes of the Memristor Frequency Effect

A memristor is often identified by showing its distinctive pinched hysteresis curve and testing for the effect of frequency. The hysteresis size should relate to frequency and shrink to zero as the frequency approaches infinity. Although mathematically understood, the material causes for this are not well known. The d.c. response of the memristor is a decaying curve with its own timescale. We show via mathematical reasoning that this decaying curve when transformed to a.c. leads to the frequency effect by considering a descretized curve. We then demonstrate the validity of this approach with experimental data from two different types of memristors.

preprint2012arXiv

Organic Memristor Devices for Logic Elements with Memory

Memristors are promising next-generation memory candidates that are nonvolatile, possess low power requirements and are capable of nanoscale fabrication. In this article we physically realise and describe the use of organic memristors in designing statefull boolean logic gates for the AND OR and NOT operations. The output of these gates is analog and dependent on the length of time that suitable charge is applied to the inputs, displaying a learning property. Results may be also interpreted in a traditional binary manner through use of a suitable thresholding function at the output. The memristive property of the gate allows the for the production of analog outputs that vary based on the charge-dependent nonvolatile state of the memristor. We provide experimental results of physical fabrication of three types of logic gate. A simulation of a one-bit full adder comprised of memristive logic gates is also included, displaying varying response to two distinct input patterns.