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Verónica Vildosola

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cond-mat.mtrl-sci cond-mat.str-el

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preprint2019arXiv

Magnetic couplings and magnetocaloric effect in the GdTX (T=Sc, Ti, Co, Fe; X=Si, Ge) compounds

We compute the magnetocaloric effect (MCE) in the GdTX (T=Sc, Ti, Co, Fe; X=Si, Ge) compounds as a function of the temperature and the external magnetic field. To this end we use a density functional theory approach to calculate the exchange-coupling interactions between Gd$^{3+}$ ions on each compound. We consider a simplified magnetic Hamiltonian and analyze the dependence of the exchange couplings on the transition metal T, the p-block element X, and the crystal structure (CeFeSi-type or CeScSi-type). The most significant effects are observed for the replacements Ti $\to$ Sc or Fe $\to$ Co which have an associated change in the parity of the electron number in the 3d level. These replacements lead to an antiferromagnetic contribution to the magnetic couplings that reduces the Curie temperature and can even lead to an antiferromagnetic ground state. We solve the magnetic models through mean field and Monte Carlo calculations and find large variations among compounds in the magnetic transition temperature and in the magnetocaloric effect, in agreement with the available experimental data. The magnetocaloric effect shows a universal behavior as a function of temperature and magnetic field in the ferromagnetic compounds after a scaling of the relevant energy scales by the Curie temperature $T_C$.

preprint2019arXiv

Minimal model for the magnetic phase diagram of CeTi$_{1-x}$Sc$_{x}$Ge, GdFe$_{1-x}$Co$_{x}$Si, and related materials

We present a theoretical analysis of the magnetic phase diagram of CeTi$_{1-x}$Sc$_{x}$Ge and GdFe$_{1-x}$Co$_{x}$Si as a function of the temperature and the Sc and Co concentration $x$, respectively. CeScGe and GdCoSi, as many other RTX (R=rare earth, T=transition metal, X=p-block element) compounds, present a tetragonal crystal structure where bilayers of R are separated by layers of T and X. While GdFeSi and CeTi$_{0.75}$Sc$_{0.25}$Ge are ferromagnetic, CeScGe and GdCoSi order antiferromagnetically with the R 4f magnetic moments on the same bilayer aligned ferromagnetically and magnetic moments in nearest neighbouring bilayers aligned antiferromagnetically. The antiferromagnetic transition temperature $T_N$ decreases with decreasing concentration $x$ in both compounds and for low enough values of $x$ the compounds show a ferromagnetic behavior. Based on these observations we construct a simplified model Hamiltonian that we solve numerically for the specific heat and the magnetization. We find a good qualitative agreement between the model and the experimental data. Our results show that the main magnetic effect of the Sc $\to$ Ti and Co $\to$ Fe substitution in these compounds is consistent with a change in the sign of the exchange coupling between magnetic moments in neighbouring bilayers. We expect a similar phenomenology for other magnetic RTX compounds with the same type of crystal structure.

preprint2016arXiv

Tuning the electronic properties at the surface of BaBiO3 thin films

The presence of 2D electron gases at surfaces or interfaces in oxide thin films remains a hot topic in condensed matter physics. In particular, BaBiO3 appears as a very interesting system as it was theoretically proposed that its (001) surface should become metallic if a Bi-termination is achieved (Vildosola et al., PRL 110, 206805 (2013)). Here we report on the preparation by pulsed laser deposition and characterization of BaBiO3 thin films on silicon. We show that the texture of the films can be tuned by controlling the growth conditions, being possible to stabilize strongly (100)-textured films. We find significant differences on the spectroscopic and transport properties between (100)-textured and non-textured films. We rationalize these experimental results by performing first principles calculations, which indicate the existence of electron doping at the (100) surface. This stabilizes Bi ions in a 3+ state, shortens Bi-O bonds and reduces the electronic band gap, increasing the surface conductivity. Our results emphasize the importance of surface effects on the electronic properties of perovskites, and provide strategies to design novel oxide heterostructures with potential interface-related 2D electron gases.

preprint2013arXiv

Mechanism to Generate a Two-Dimensional Electron Gas at the Surface of the Charge-Ordered Semiconductor BaBiO3

In this work, we find by means of first principle calculations a new physical mechanism to generate a two dimensional electron gas, namely, the breaking of charge ordering at the surface of a charge ordered semiconductor due to the incomplete oxygen environment of the surface ions. The emergence of the 2D gas is independent of the presence of oxygen vacancies or polar discontinuities; this is a self-doping effect. This mechanism might apply to many charge ordered systems, in particular, we study the case of BaBiO3(001). In bulk, this material is a prototype of a "forbidden valence" compound in which the formal "metallic" Bi4+ state is skipped exhibiting a charge disproportionated Bi3+ - Bi5+ ordered structure. At room temperature, this charge disproportionation together with the breathing distortions gives rise to a Peierls semiconductor with monoclinic crystal structure. At higher temperature (T > 750 K) or upon doping, it turns cubic and metallic. Interestingly, doped BaBiO3 was one of the first non-cuprate high-Tc superconductors discovered. The outer layer of the Bi-terminated simulated surface turns more cubic- like and metallic while the inner layers remain in the insulating monoclinic state. On the other hand, the metallization does not occur for the Ba termination, a fact that makes this system appealing for nanostructuring. Finally, this finding sets another possible route for future exploration: the potential scenario of 2D superconductivity at the BaBiO3 surface.