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Venkata Sai Praneeth Karempudi

Venkata Sai Praneeth Karempudi contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

PROTEUS: Rule-Based Self-Adaptation in Photonic NoCs for Loss-Aware Co-Management of Laser Power and Performance

The performance of on-chip communication in the state-of-the-art multi-core processors that use the traditional electron-ic NoCs has already become severely energy-constrained. To that end, emerging photonic NoCs (PNoC) are seen as a po-tential solution to improve the energy-efficiency (performance per watt) of on-chip communication. However, existing PNoC designs cannot realize their full potential due to their exces-sive laser power consumption. Prior works that attempt to improve laser power efficiency in PNoCs do not consider all key factors that affect the laser power requirement of PNoCs. Therefore, they cannot yield the desired balance between the reduction in laser power, achieved performance and energy-efficiency in PNoCs. In this paper, we present PROTEUS framework that employs rule-based self-adaptation in PNoCs. Our approach not only reduces the laser power consumption, but also minimizes the average packet latency by opportunis-tically increasing the communication data rate in PNoCs, and thus, yields the desired balance between the laser power re-duction, performance, and energy-efficiency in PNoCs. Our evaluation with PARSEC benchmarks shows that our PROTEUS framework can achieve up to 24.5% less laser power consumption, up to 31% less average packet latency, and up to 20% less energy-per-bit, compared to another laser power management technique from prior work.

preprint2020arXiv

Redesigning Photonic Interconnects with Silicon-on-Sapphire Device Platform for Ultra-Low-Energy On-Chip Communication

Traditional silicon-on-insulator (SOI) platform based on-chip photonic interconnects have limited energy-bandwidth scalability due to the optical non-linearity induced power constraints of the constituent photonic devices. In this paper, we propose to break this scalability barrier using a new silicon-on-sapphire (SOS) based photonic device platform. Our physical-layer characterization results show that SOS-based photonic devices have negligible optical non-linearity effects in the mid-infrared region near 4μm, which drastically alleviates their power constraints. Our link-level analysis shows that SOS-based photonic devices can be used to realize photonic links with aggregated data rate of more than 1 Tb/s, which recently has been deemed unattainable for the SOI-based photonic on-chip links. We also show that such high-throughput SOS-based photonic links can significantly improve the energy-efficiency of on-chip photonic communication architectures. Our system-level analysis results position SOS-based photonic interconnects to pave the way for realizing ultra-low-energy (< 1 pJ/bit) on-chip data transfers.