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Valérie Santonacci

Valérie Santonacci appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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2 published item(s)

preprint2010arXiv

Perpendicular anisotropy of ultrathin epitaxial cobalt films on graphene

Graphene is attractive for spintronics due to its long spin life time and high mobility. So far only thick and polycrystalline slabs have been used as ferromagnetic electrodes. We report the growth of flat, epitaxial ultrathin Co films on graphene. These display perpendicular magnetic anisotropy in the thickness range 0.5-1nm, which is confirmed by theory. PMA, epitaxy and ultrathin thickness bring new perspectives for graphene-based spintronic devices such as the zero-field control of an arbitrary magnetization direction, band matching between electrodes and graphene, and interface effects such as Rashba and electric field control of magnetism.

preprint2006arXiv

Growth modes of Fe(110) revisited: a contribution of self-assembly to magnetic materials

We have revisited the epitaxial growth modes of Fe on W(110) and Mo(110), and propose an overview or our contribution to the field. We show that the Stranski-Krastanov growth mode, recognized for a long time in these systems, is in fact characterized by a bimodal distribution of islands for growth temperature in the range 250-700°C. We observe firstly compact islands whose shape is determined by Wulff-Kaischev's theorem, secondly thin and flat islands that display a preferred height, ie independant from nominal thickness and deposition procedure (1.4nm for Mo, and 5.5nm for W on the average). We used this effect to fabricate self-organized arrays of nanometers-thick stripes by step decoration. Self-assembled nano-ties are also obtained for nucleation of the flat islands on Mo at fairly high temperature, ie 800°C. Finally, using interfacial layers and solid solutions we separate two effects on the preferred height, first that of the interfacial energy, second that of the continuously-varying lattice parameter of the growth surface.