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Bogdana Borca

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Published work

2 published item(s)

preprint2010arXiv

Electronic and Geometric Corrugation of Periodically Rippled, Self-nanostructured Graphene Epitaxially Grown on Ru(0001)

Graphene epitaxially grown on Ru(0001) displays a remarkably ordered pattern of hills and valleys in Scanning Tunneling Microscopy (STM) images. To which extent the observed "ripples" are structural or electronic in origin have been much disputed recently. A combination of ultrahigh resolution STM images and Helium Atom diffraction data shows that i) the graphene lattice is rotated with respect to the lattice of Ru and ii) the structural corrugation as determined from He diffraction is substantially smaller (0.015 nm) than predicted (0.15 nm) or reported from X-Ray Diffraction or Low Energy Electron Diffraction. The electronic corrugation, on the contrary, is strong enough to invert the contrast between hills and valleys above +2.6 V as new, spatially localized electronic states enter the energy window of the STM. The large electronic corrugation results in a nanostructured periodic landscape of electron and holes pockets.

preprint2006arXiv

Growth modes of Fe(110) revisited: a contribution of self-assembly to magnetic materials

We have revisited the epitaxial growth modes of Fe on W(110) and Mo(110), and propose an overview or our contribution to the field. We show that the Stranski-Krastanov growth mode, recognized for a long time in these systems, is in fact characterized by a bimodal distribution of islands for growth temperature in the range 250-700°C. We observe firstly compact islands whose shape is determined by Wulff-Kaischev's theorem, secondly thin and flat islands that display a preferred height, ie independant from nominal thickness and deposition procedure (1.4nm for Mo, and 5.5nm for W on the average). We used this effect to fabricate self-organized arrays of nanometers-thick stripes by step decoration. Self-assembled nano-ties are also obtained for nucleation of the flat islands on Mo at fairly high temperature, ie 800°C. Finally, using interfacial layers and solid solutions we separate two effects on the preferred height, first that of the interfacial energy, second that of the continuously-varying lattice parameter of the growth surface.