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Source author record

Valentyn S. Volkov

Valentyn S. Volkov appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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physics.opticscond-mat.mtrl-sci

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Published work

5 published item(s)

preprint2022arXiv

Twisted polaritonic crystals in thin van der Waals slabs

Polaritons - hybrid light-mater excitations - are very appealing for the confinement of light at the nanoscale. Recently, different kinds of polaritons have been observed in thin slabs of van der Waals (vdW) materials, with particular interest focused on phonon polaritons (PhPs) - lattice vibrations coupled to electromagnetic fields in the mid-infrared spectral range with - in biaxial crystals, such as e.g. MoO3. In particular, hyperbolic PhPs - having hyperbola-like shape of their isofrequency curves - in MoO3 can exhibit ultra-high momenta and strongly directional in-plane propagation, promising novel applications in imaging, sensing or thermal management at the nanoscale and in a planar geometry. However, the excitation and manipulation of in-plane hyperbolic PhPs have not yet been well studied and understood. Here we propose a technological platform for the effective excitation and control of in-plane hyperbolic PhPs based on polaritonic crystals (PCs) - lattices formed by elements separated by distances comparable to the PhPs wavelength -, twisted with respect to the natural vdW crystal axes. In particular, we develop a general analytical theory valid for an arbitrary PC made in a thin biaxial slab. As a practical example, we consider a twisted PC formed by rectangular hole arrays made in MoO3 slab and demonstrate the excitation of Bragg resonances tunable by the twisting angle. Our findings open novel avenues for both fundamental studies of PCs in vdW crystals and the development of mid-infrared sensing and photodetection applications

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Peculiarities and evolution of Raman spectra of multilayer Ge/Si(001) heterostructures containing arrays of low-temperature MBE-grown Ge quantum dots of different size and number density: Experimental studies and numerical simulations

Ge/Si(001) multilayer heterostructures containing arrays of low-temperature self-assembled Ge quantum dots and very thin Si$_x$Ge$_{1-x}$ layers of varying composition and complex geometry have been studied using Raman spectroscopy and scanning tunneling microscopy. The dependence of Raman spectra on the effective thickness of deposited Ge layers has been investigated in detail in the range from 4 to 18 Å. The position and shape of both Ge and SiGe vibrational modes are of great interest since they are closely related to the strain and composition of the material that plays a role of active component in perspective optoelectronic devices based on such structures. In this work, we present an explanation for some peculiar features of Raman spectra, which makes it possible to control the quality of the grown heterostructures more effectively. A dramatic increase of intensity of both the Ge$-$Ge and Si$-$Ge bands for the structure containing Ge layers of 10 Å and anomalous shift and broadening of the Si$-$Ge band for structures comprising Ge layers of 8 and 9 Å thick were observed. In our model, the anomalous behavior of the Raman spectra with the change of thickness of deposited Ge is connected with the flatness of Ge layers as well as transitional SiGe domains formed via the stress-induced diffusion from {105} facets of quantum dots. The conclusions are supported by the STM studies and the numerical calculations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

The formation of intermediate layers in covered Ge/Si heterostructures with low-temperature quantum dots: a study using high-resolution transmission electron microscopy and Raman spectroscopy

The method of software analysis of high-resolution TEM images using the peak pairs algorithm in combination with Raman spectroscopy was employed to study lattice deformations in Ge/Si(001) structures with low-temperature Ge quantum dots. It was found that the stresses do not spread in a thick Si layer above quantum dots, but completely relax via the formation of a thin boundary layer of mixed composition. However, intermixing of Ge and Si is absent beneath the Ge layer in samples with a Ge coverage of 10 Å. Besides intermixing was not observed at all, both beneath and above the Ge layer, in samples with a Ge coverage of 6 Å or less. This may be due to the predominance of Ge diffusion into the Si matrix from the {105} facets of Ge huts, not from the Ge wetting layer, at low temperatures of the Ge/Si structure deposition. The critical thickness of Si coverage at which the intense stress-induced diffusion takes place is determined to lie in the range from 5 to 8 nm.

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preprint2016arXiv

Boosting local field enhancement by on-chip nanofocusing and impedance-matched plasmonic antennas

Strongly confined surface plasmon-polariton modes can be used for efficiently delivering the electromagnetic energy to nano-sized volumes by reducing the cross sections of propagating modes far beyond the diffraction limit, i.e., by nanofocusing. This process results in significant local-field enhancement that can advantageously be exploited in modern optical nanotechnologies, including signal processing, biochemical sensing, imaging and spectroscopy. Here, we propose, analyze, and experimentally demonstrate on-chip nanofocusing followed by impedance-matched nanowire antenna excitation in the end-fire geometry at telecom wavelengths. Numerical and experimental evidences of the efficient excitation of dipole and quadrupole (dark) antenna modes are provided, revealing underlying physical mechanisms and analogies with the operation of plane-wave Fabry-Pérot interferometers. The unique combination of efficient nanofocusing and nanoantenna resonant excitation realized in our experiments offers a major boost to the field intensity enhancement up to $\sim 12000$, with the enhanced field being evenly distributed over the gap volume of $30\times 30\times 10\ {\rm nm}^3$, and promises thereby a variety of useful on-chip functionalities within sensing, nonlinear spectroscopy and signal processing.

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preprint2016arXiv

Direct characterization of plasmonic slot waveguides and nanocouplers

We demonstrate the use of amplitude- and phase-resolved near-field mapping for direct characterization of plasmonic slot waveguide mode propagation and excitation with nanocouplers in the telecom wavelength range. We measure mode's propagation length, effective index and field distribution and directly evaluate the relative coupling efficiencies for various couplers configurations. We report 26- and 15-fold improvements in the coupling efficiency with two serially connected dipole and modified bow-tie antennas, respectively, as compared to that of the short-circuited waveguide termination.

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