Researcher profile

Vaibhav Ostwal

Vaibhav Ostwal contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Hardware implementation of Bayesian network building blocks with stochastic spintronic devices

Bayesian networks are powerful statistical models to understand causal relationships in real-world probabilistic problems such as diagnosis, forecasting, computer vision, etc. For systems that involve complex causal dependencies among many variables, the complexity of the associated Bayesian networks become computationally intractable. As a result, direct hardware implementation of these networks is one promising approach to reducing power consumption and execution time. However, the few hardware implementations of Bayesian networks presented in literature rely on deterministic CMOS devices that are not efficient in representing the inherently stochastic variables in a Bayesian network. This work presents an experimental demonstration of a Bayesian network building block implemented with naturally stochastic spintronic devices. These devices are based on nanomagnets with perpendicular magnetic anisotropy, initialized to their hard axes by the spin orbit torque from a heavy metal under-layer utilizing the giant spin Hall effect, enabling stochastic behavior. We construct an electrically interconnected network of two stochastic devices and manipulate the correlations between their states by changing connection weights and biases. By mapping given conditional probability tables to the circuit hardware, we demonstrate that any two node Bayesian networks can be implemented by our stochastic network. We then present the stochastic simulation of an example case of a four node Bayesian network using our proposed device, with parameters taken from the experiment. We view this work as a first step towards the large scale hardware implementation of Bayesian networks.

preprint2019arXiv

Demonstration of a strain-mediated magnetoelectric write and read unit in a Co60Fe20B20/ Pb(Mg1/3Nb2/3)0.7Ti0.3O3 heterostructure

Taking advantage of the Magnetoelectric (ME) and its inverse effect, this article demonstrates strain-mediated magnetoelectric write and read operations simultaneously in Co60Fe20B20/ Pb(Mg1/3Nb2/3)0.7Ti0.3O3 heterostructures without using any symmetry breaking magnetic field at room temperature. By applying an external DC-voltage across a (011)-cut PMN-PT substrate, the ferroelectric polarization is re-oriented, which results in an anisotropic in-plane strain that transfers to the CoFeB thin film and changes its magnetic anisotropy Hk. The change in Hk in-turn results in a 90o rotation of the magnetic easy axis for sufficiently high voltages. Simultaneously, the inverse effect is employed to read changes of the magnetic properties. Because the Piezoelectric (PE)/FerroMagnetic (FM) system is fully coupled, the change of magnetization in FM induces an elastic stress in the PE layer, which generates a piezoelectric potential in the system that can be used to readout the magnetic state of the FM layer. Our experimental results are in excellent qualitative agreement with a recently proposed, experimentally benchmarked equivalent circuit model that considers how magnetic properties are electrically controlled in such ME/PE heterostructure and how a back-voltage is generated due to changing magnetic properties in a self-consistent model.