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Researcher profile

Vadim M. Apalkov

Vadim M. Apalkov contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

8 published item(s)

preprint2012arXiv

Superluminal Tachyonlike Excitations of Dirac Fermions in a Topological Insulator Junction

We have considered a system of two topological insulators and have determined the properties of the surface states at the junction. Here we report that these states, under certain conditions exhibit superluminous (tachyonic) dispersion of the Dirac fermions. Although superluminal excitations are known to exist in optical systems, this is the first demonstration of possible tachyonic excitations in a purely electronic system. The first ever signature of tachyons could therefore be found experimentally in a topological insulator junction.

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preprint2012arXiv

The Fractional Quantum Hall Effect of Tachyons in a Topological Insulator Junction

We have studied the tachyonic excitations in the junction of two topological insulators in the presence of an external magnetic field. The Landau levels, evaluated from an effective two-dimensional model for tachyons, and from the junction states of two topological insulators, show some unique properties not seen in conventional electrons systems or in graphene. The $ν=1/3$ fractional quantum Hall effect has also a strong presence in the tachyon system.

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preprint2011arXiv

A Stable Pfaffian State in Bilayer Graphene

Here we show that the Pfaffian state proposed for the $\frac52$ fractional quantum Hall states in conventional two-dimensional electron systems can be readily realized in a bilayer graphene at one of the Landau levels. The properties and stability of the Pfaffian state at this special Landau level strongly depend on the magnetic field strength. The graphene system shows a transition from the incompressible to a compressible state with increasing magnetic field. At a finite magnetic field of ~10 Tesla, the Pfaffian state in bilayer graphene becomes more stable than its counterpart in conventional electron systems.

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preprint2011arXiv

Electrically tunable charge and spin transitions in Landau levels of interacting Dirac fermions in trilayer graphene

Trilayer graphene in the fractional Quantum Hall Effect regime displays a set of unique interaction-induced transitions that can be tuned entirely by the applied bias voltage. These transitions occur near the anti-crossing points of two Landau levels. In a large magnetic field ($> 8$ T) the electron-electron interactions close the anti-crossing gap, resulting in some unusual transitions between different Landau levels. For the filling factor $ν=\frac23$, these transitions are accompanied by a change of spin polarization of the ground state. For a small Zeeman energy, this provides an unique opportunity to control the spin polarization of the ground state by fine tuning the bias voltage.

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preprint2011arXiv

Interacting Dirac Fermions on a Topological Insulator in a Magnetic Field

We have studied the fractional quantum Hall states on the surface of a topological insulator thin film in an external magnetic field, where the Dirac fermion nature of the charge carriers have been experimentally established only recently. Our studies indicate that the fractional quantum Hall states should indeed be observable in the surface Landau levels of a topological insulator. The strength of the effect will however be different, compared to that in graphene, due to the finite thickness of the topological insulator film and due to the admixture of Landau levels of the two surfaces of the film. At a small film thickness, that mixture results in a strongly non-monotonic dependence of the excitation gap on the film thickness. At a large enough thickness of the film, the excitation gap in the lowest two Landau levels are comparable in strength.

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preprint2011arXiv

Misoriented bilayer graphene in a magnetic field: Optical transitions at commensurate angles

Misoriented bilayer graphene with commensurate angles shows unique magneto-optical properties. The optical absorption spectra of such a system strongly depend on the angle of rotation. For a general commensurate twist angle the absorption spectra has a simple single-peak structure. However, our studies indicate that there are special angles at which the absorption spectra of the rotated bilayer exhibit well developed multi-peak structures. These angles correspond to even symmetry of the rotated graphene with respect to the sublattice exchange. Magneto-spectroscopy can therefore be a potentially useful scheme to determine the twist angles.

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preprint2010arXiv

Controllable, driven phase transitions in the Fractional quantum Hall states in bilayer graphene

Here we report from our theoretical studies that in biased bilayer graphene, one can induce phase transitions from an incompressible fractional quantum Hall state to a compressible state by tuning the bandgap at a given electron density. The nature of such phase transitions is different for weak and strong inter-layer coupling. Although for strong coupling more levels interact there are lesser number of transitions than for the weak coupling case. The intriguing scenario of tunable phase transitions in the fractional quantum Hall states is unique to bilayer graphene and never before existed in conventional semiconductor systems.

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preprint2010arXiv

Reentrant fractional quantum Hall states in bilayer graphene: Controllable, driven phase transitions

Here we report from our theoretical studies that in biased bilayer graphene, one can induce phase transitions from an incompressible state to a compressible state by tuning the bandgap at a given electron density. Likewise, variation of the density with a fixed bandgap results in a transition from the FQHE states at lower Landau levels to compressible states at intermediate Landau levels and finally to FQHE states at higher Landau levels. This intriguing scenario of tunable phase transitions in the fractional quantum Hall states is unique to bilayer graphene and never before existed in conventional semiconductor systems.

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