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Vadim Dyadkin

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cond-mat.mtrl-sci

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preprint2020arXiv

Crystal structure, Chemical Bonding, Electrical and Thermal Transport in Sc5Rh6Sn18

Single crystals of Sc5Rh6Sn18 were grown from Sn-flux. The crystal structure (SG: I41/acd, a = 13.5529(2) Å, c = 27.0976(7) Å) was studied by high-resolution X-ray diffraction on powder and single crystal material as well as by TEM. All methods confirm it to crystallize with Sc5Ir6Sn18 (space group I41/acd) type of structure. The performed structural studies suggest also the presence of local domains with broken average translational symmetry. Analysis of the chemical bonding situation reveal highly polar Sc2-Sn1, Sn-Rh and Sc2-Rh bonds, two- and three-center bonds involving Sn-atoms as well as ionic nature of Sc1 bonding. The thermopower of Sc5Rh6Sn18 is isotropic, small and negative (i.e. dominance of electron-like charge carriers). Due to structural disorder, the thermal conductivity is lowered in comparison with regular metallic systems.

preprint2013arXiv

Thin films MnGe grown on Si(111)

MnGe has been grown as a thin film on Si(111) substrates by molecular beam epitaxy. A 10 Å layer of MnSi was used as seedlayer in order to establish the B20 crystal structure. Films of a thickness between 45 and 135 Å have been prepared and structually characterized by RHEED, AFM and XRD. These techniques give evidence that MnGe forms in the cubic B20 crystal structure as islands exhibiting a very smooth surface. The islands become larger with increasing film thickness. A magnetic characterization reveals that the ordering temperature of MnGe thin films is enhanced compared to bulk material. The properties of the helical magnetic structure obtained from magnetization and magnetoresistivity measurements are compared with films of the related compound MnSi. The much larger Dzyaloshinskii-Moriya interaction in MnGe results in a higher rigidness of the spin helix.