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V. V. Enaldiev

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Published work

8 published item(s)

preprint2021arXiv

A scalable network model for electrically tunable ferroelectric domain structure in twistronic bilayers of two-dimensional semiconductors

Moiré structures in small-angle-twisted bilayers of two-dimensional semiconductors with a broken-symmetry interface form arrays of ferroelectric domains with periodically alternating out-of-plane polarization. Here, we propose a network theory for the tunability of such FE domain structure by applying an electric field perpendicular to the 2D crystal. Using multiscale analysis, we derive a fully parametrized string-theory-like description of the domain wall network and show that it undergoes a qualitative change, after the arcs of partial dislocation like domain walls merge (near the network nodes) into streaks of perfect screw dislocations, which happens at a threshold displacement field dependent on the DWN period.

preprint2020arXiv

Stacking domains and dislocation networks in marginally twisted bilayers of transition metal dichalcogenides

We apply a multiscale modeling approach to study lattice reconstruction in marginally twisted bilayers of transition metal dichalcogenides (TMD). For this, we develop DFT-parametrized interpolation formulae for interlayer adhesion energies of MoSe$_2$, WSe$_2$, MoS$_2$, and WS$_2$, combine those with elasticity theory, and analyze the bilayer lattice relaxation into mesoscale domain structures. Paying particular attention to the inversion asymmetry of TMD monolayers, we show that 3R and 2H stacking domains, separated by a network of dislocations develop for twist angles $θ^{\circ}<θ^{\circ}_P\sim 2.5^{\circ}$ and $θ^{\circ}<θ^{\circ}_{AP}\sim 1^{\circ}$ for, respectively, bilayers with parallel (P) and antiparallel (AP) orientation of the monolayer unit cells and suggest how the domain structures would manifest itself in local probe scanning of marginally twisted P- and AP-bilayers.

preprint2016arXiv

Resonant Enhancement of Second Harmonic Generation by Edge States in Transition Metal Dichalcogenide Monolayers

We derive a low-energy theory for edge states in transition metal dichalcogenide monolayers for a two-band $\bm{kp}$-Hamiltonian in case of uncoupled valleys. In the absence of spin-orbit interaction at the edge, these states possess a linear dispersion described by a single phenomenological parameter characterizing the edge structure. Depending on the sign of the parameter, the edge state spectrum can either cross the band gap or lie outside of it. In the first case, the presence of edge states leads to resonant enhancement of the second harmonic generation at frequencies about the half of the band gap, in agreement with recent experiments. The value of the phenomenological boundary parameter is extracted from the resonance frequency position.

preprint2015arXiv

Boundary Conditions and Surface States Spectra in Topological Insulators

We study spectra of surface states in 2D topological insulators (TIs) based on HgTe/(Hg,Cd)Te quantum wells and 3D Bi$_2$Se$_3$-type compounds by constructing a class of feasible time-reversal invariant boundary conditions (BCs) for an effective ${\bf k}{\bf p}$-Hamiltonian and a tight-binding model of the topological insulators. The BCs contain some phenomenological parameters which implicitly depend on both bulk Hamiltonian parameters and crystal potential behavior near the crystal surface. Space symmetry reduces the number of the boundary parameters to four real parameters in the 2D case and three in the 3D case. We found that the boundary parameters may strongly affect not only an energy spectrum but even the very existence of these states inside the bulk gap near the Brillouin zone center. Nevertheless, we reveal in frames of the tight-binding model that when surface states do not exist in the bulk gap in the Brillouin zone center they cross the gap in other points of the Brillouin zone in agreement with the bulk-boundary correspondence.

preprint2015arXiv

Resonant electron scattering by graphene antidot

The edge states which were observed on a linear edge of graphene may also persist on a curved edge. We calculate the elastic transport scattering cross section on a graphene nanohole supporting the edge states. Resonant peaks in the gate voltage dependence of conductivity of graphene with such nanoholes are obtained. Position and height of the resonances are determined by the localization depth of the quasibound edge states, and width -- by their lifetime. The scattering amplitude near the resonant energies has a strong valley asymmetry. We evaluate the effect of moderate edge rippling, inhomogeneity of boundary parameter along the edge, and Coulomb effects (charged nanohole) on the edge states and show that they do not affect the presence of the resonances, but can substantially influence their position, height and width. The local density of states near the nanohole also demonstrates a resonant dependence on gate voltage.

preprint2015arXiv

Transport of Massless Dirac Fermions in Non-topological Type Edge States

There are two types of intrinsic surface states in solids. The first type is formed on the surface of topological insulators. Recently, transport of massless Dirac fermions in the band of "topological" states has been demonstrated. States of the second type were predicted by Tamm and Shockley long ago. They do not have a topological background and are therefore strongly dependent on the properties of the surface. We study the problem of the conductivity of Tamm-Shockley edge states through direct transport experiments. Aharonov-Bohm magneto-oscillations of resistance are found on graphene samples that contain a single nanohole. The effect is explained by the conductivity of the massless Dirac fermions in the edge states cycling around the nanohole. The results demonstrate the deep connection between topological and non-topological edge states in 2D systems of massless Dirac fermions.

preprint2013arXiv

Aharonov-Bohm resistance magneto-oscillations on single-nanohole graphite and graphene structures

Graphene is a stable single atomic layer material exhibiting two-dimensional electron gas of massless Dirac fermions of high mobility. One of the intriguing properties of graphene is a possibility of realization of the Tamm-type edge states. These states differ from the usual surface states caused by defects, impurities and other imperfections at the edge of the system, as well as they differ from the magnetic edge states caused by skipping cyclotron orbits. The Tamm states result from breaking of periodic crystal potential at the edge, they can exist even at zero magnetic field and form a conducting band. Until recently those states have been observed in graphene only by local STM technique and there were no direct experiments on their contribution to transport measurements. Here we present the experiments on Aharonov-Bohm (AB) oscillations of resistance in a single-nanohole graphite and graphene structures, it indicates the presence of conducting edge states cycling around nanohole. An estimation show the penetration depth of the edge states to be as short as about 2 nm. The oscillations persist up to temperature T=115 K and the T-range of their existence increases with a decrease of the nanohole diameter. The proposed mechanism of the AB oscillations based on the resonant intervalley backscattering of the Dirac fermions by the nanohole via the Tamm states. The experimental results are consistent with such a scenario. Our findings show a way towards interference devices operating at high temperatures on the edge states in graphene

preprint2013arXiv

Quantum confinement, energy spectra and backscattering of Dirac fermions in quantum wire in magnetic field

We address the problems of an energy spectrum and backscattering of massive Dirac fermions confined in a cylindrical quantum wire. The Dirac fermions are described by the 3D Dirac equation supplemented by time-reversal-invariant boundary conditions at a surface of the wire. Even in zero magnetic field, spectra quantum-confined and surface states substantially depend on a boundary parameter a0. At the wire surface with a0 > 0 (a0 < 0) the surface states form 1D massive subbands inside (outside) the bulk gap. The longitudinal magnetic field transforms the energy spectra. In the limit of the thick wires and the weak magnetic fields, the 1D massless surface subbands arise at half- integer number of magnetic flux quanta passing through the wire cross section. We reveal conditions when backscattering of the surface Dirac fermions by a non-magnetic impurity is suppressed. In addition, we calculate a conductance formed by the massless surface Dirac fermions in the magnetic field in collisional and ballistic regimes.