Source author record

I. V. Zagorodnev

I. V. Zagorodnev appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

6works
2topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

6 published item(s)

preprint2022arXiv

Oscillations in the radiative damping of plasma resonances in a gated disk of 2D electron gas

We calculate the absorption spectra of a conductive disk in the presence of a metal gate. In our analysis, we use the conductivity described by the Drude model. We examine the frequency and line width of the absorption resonances associated with the excited plasma waves. They are estimated both numerically and analytically for the fundamental and axisymmetric plasma modes. The line width is determined by the collisional and radiative losses. In high mobility samples, the latter may dominate even when the resonant frequencies can be described by a standard quasistatic approximation, i.e., neglecting electromagnetic retardation. Placing a metal near the disk drastically affects the radiative broadening of the line width due to the interference of electromagnetic fields created by the disk and the metal charges. Bringing the disk in close proximity to the gate makes the total field almost vanish. In that case, the line width is defined solely by the collisional broadening. As the disk is moved away from the gate, the line width first shows a reduction since the plasmon transforms into plasmon-polariton, which is dressed with undamped electromagnetic field surrounding the disk. Then it increases and exhibits decaying oscillations, reaching the asymptotic value of the ungated disk.

preprint2015arXiv

Boundary Conditions and Surface States Spectra in Topological Insulators

We study spectra of surface states in 2D topological insulators (TIs) based on HgTe/(Hg,Cd)Te quantum wells and 3D Bi$_2$Se$_3$-type compounds by constructing a class of feasible time-reversal invariant boundary conditions (BCs) for an effective ${\bf k}{\bf p}$-Hamiltonian and a tight-binding model of the topological insulators. The BCs contain some phenomenological parameters which implicitly depend on both bulk Hamiltonian parameters and crystal potential behavior near the crystal surface. Space symmetry reduces the number of the boundary parameters to four real parameters in the 2D case and three in the 3D case. We found that the boundary parameters may strongly affect not only an energy spectrum but even the very existence of these states inside the bulk gap near the Brillouin zone center. Nevertheless, we reveal in frames of the tight-binding model that when surface states do not exist in the bulk gap in the Brillouin zone center they cross the gap in other points of the Brillouin zone in agreement with the bulk-boundary correspondence.

preprint2015arXiv

Orbital Quantization in a System of Edge Dirac Fermions in Nanoperforated Graphene

The dependence of the electric resistance R of nanoperforated graphene samples on the position of the Fermi level, which is varied by the gate voltage Vg, has been studied. Nanoperforation has been performed by irradiating graphene samples on a Si/SiO$_2$ substrate by heavy (xenon) or light (helium) ions. A series of regular peaks have been revealed on the R(Vg) dependence at low temperatures in zero magnetic field. These peaks are attributed to the passage of the Fermi level through an equidistant ladder of levels formed by orbitally quantized states of edge Dirac fermions rotating around each nanohole. The results are in agreement with the theory of edge states for massless Dirac fermions.

preprint2015arXiv

Resonant electron scattering by graphene antidot

The edge states which were observed on a linear edge of graphene may also persist on a curved edge. We calculate the elastic transport scattering cross section on a graphene nanohole supporting the edge states. Resonant peaks in the gate voltage dependence of conductivity of graphene with such nanoholes are obtained. Position and height of the resonances are determined by the localization depth of the quasibound edge states, and width -- by their lifetime. The scattering amplitude near the resonant energies has a strong valley asymmetry. We evaluate the effect of moderate edge rippling, inhomogeneity of boundary parameter along the edge, and Coulomb effects (charged nanohole) on the edge states and show that they do not affect the presence of the resonances, but can substantially influence their position, height and width. The local density of states near the nanohole also demonstrates a resonant dependence on gate voltage.

preprint2015arXiv

Transport of Massless Dirac Fermions in Non-topological Type Edge States

There are two types of intrinsic surface states in solids. The first type is formed on the surface of topological insulators. Recently, transport of massless Dirac fermions in the band of "topological" states has been demonstrated. States of the second type were predicted by Tamm and Shockley long ago. They do not have a topological background and are therefore strongly dependent on the properties of the surface. We study the problem of the conductivity of Tamm-Shockley edge states through direct transport experiments. Aharonov-Bohm magneto-oscillations of resistance are found on graphene samples that contain a single nanohole. The effect is explained by the conductivity of the massless Dirac fermions in the edge states cycling around the nanohole. The results demonstrate the deep connection between topological and non-topological edge states in 2D systems of massless Dirac fermions.

preprint2013arXiv

Aharonov-Bohm resistance magneto-oscillations on single-nanohole graphite and graphene structures

Graphene is a stable single atomic layer material exhibiting two-dimensional electron gas of massless Dirac fermions of high mobility. One of the intriguing properties of graphene is a possibility of realization of the Tamm-type edge states. These states differ from the usual surface states caused by defects, impurities and other imperfections at the edge of the system, as well as they differ from the magnetic edge states caused by skipping cyclotron orbits. The Tamm states result from breaking of periodic crystal potential at the edge, they can exist even at zero magnetic field and form a conducting band. Until recently those states have been observed in graphene only by local STM technique and there were no direct experiments on their contribution to transport measurements. Here we present the experiments on Aharonov-Bohm (AB) oscillations of resistance in a single-nanohole graphite and graphene structures, it indicates the presence of conducting edge states cycling around nanohole. An estimation show the penetration depth of the edge states to be as short as about 2 nm. The oscillations persist up to temperature T=115 K and the T-range of their existence increases with a decrease of the nanohole diameter. The proposed mechanism of the AB oscillations based on the resonant intervalley backscattering of the Dirac fermions by the nanohole via the Tamm states. The experimental results are consistent with such a scenario. Our findings show a way towards interference devices operating at high temperatures on the edge states in graphene