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Researcher profile

V. Pillard

V. Pillard contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2013arXiv

Interface Electronic Structure in a Metal/Ferroelectric Heterostructure under Applied Bias

The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO3/Nb-doped SrTiO3, under in-situ bias voltage is investigated using X-Ray Photoelectron Spectroscopy. The full band alignment is measured and is supported by transport measurements. Barrier heights depend on interface chemistry and on the FE polarization. A differential response of the core levels to applied bias as a function of the polarization state is observed, consistent with Callen charge variations near the interface.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Time-resolved PhotoEmission Spectroscopy on a Metal/Ferroelectric Heterostructure

In thin film ferroelectric capacitor the chemical and electronic structure of the electrode/FE interface can play a crucial role in determining the kinetics of polarization switching. We investigate the electronic structure of a Pt/BaTiO3/SrTiO3:Nb capacitor using time-resolved photoemission spectroscopy. The chemical, electronic and depth sensitivity of core level photoemission is used to probe the transient response of different parts of the upper electrode/ferroelectric interface to voltage pulse induced polarization reversal. The linear response of the electronic structure agrees quantitatively with a simple RC circuit model. The non-linear response due to the polarization switch is demonstrated by the time-resolved response of the characteristic core levels of the electrode and the ferroelectric. Adjustment of the RC circuit model allows a first estimation of the Pt/BTO interface capacitance. The experiment shows the interface capacitance is at least 100 times higher than the bulk capacitance of the BTO film, in qualitative agreement with theoretical predictions from the literature.

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preprint2011arXiv

Step velocity tuning of SrRuO3 step flow growth on SrTiO3

Taking advantage of vicinal (001) SrTiO3 substrates with different mean terrace widths, the heteroepitaxial growth of SrRuO3 in the step flow mode has been mapped as a function of mean step velocity. Transition between stable and unstable step flow is shown to occur at a well-defined critical step velocity, with a step bunching instability observed below this threshold. The ability to pass from unstable to stable step flow during growth upon increasing the mean step velocity is demonstrated. This result is discussed in terms of a stress-based driving force for step bunching in competition with an effective step-up adatom current.

0 citations0 reviewsNo code linkedOpen access