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T. Maroutian

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cond-mat.mtrl-sci cond-mat.other

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preprint2020arXiv

Ultrafast light-induced shear strain probed by time-resolved X-ray diffraction: the model multiferroic BiFeO$_3$ as a case study

Enabling the light-control of complex systems on ultra-short timescales gives rise to rich physics with promising applications. While crucial, the quantitative determination of both the longitudinal and shear photo-induced strains still remains challenging. Here, by scrutinizing asymmetric Bragg peaks pairs $(\pm h01)$ using picosecond time-resolved X-ray diffraction experiments in BiFeO$_3$, we simultaneously determine the longitudinal and shear strains. The relative amplitude of those strains can be explained only if both thermal and non-thermal processes contribute to the acoustic phonon photogeneration process. Importantly, we also reveal a difference of the dynamical response of the longitudinal strain with respect to the shear one due to an interplay of quasi-longitudinal and quasi-transverse acoustic modes, well reproduced by our model.

preprint2014arXiv

Orientational tuning of the Fermi sea of confined electrons at the SrTiO3 (110) and (111) surfaces

We report the existence of confined electronic states at the (110) and (111) surfaces of SrTiO3. Using angle-resolved photoemission spectroscopy, we find that the corresponding Fermi surfaces, subband masses, and orbital ordering are different from the ones at the (001) surface of SrTiO3. This occurs because the crystallographic symmetries of the surface and sub-surface planes, and the electron effective masses along the confinement direction, influence the symmetry of the electronic structure and the orbital ordering of the t2g manifold. Remarkably, our analysis of the data also reveals that the carrier concentration and thickness are similar for all three surface orientations, despite their different polarities. The orientational tuning of the microscopic properties of two-dimensional electron states at the surface of SrTiO3 echoes the tailoring of macroscopic (e.g. transport) properties reported recently in LaAlO3/SrTiO3 (110) and (111) interfaces, and is promising for searching new types of 2D electronic states in correlated-electron oxides.

preprint2013arXiv

Interface Electronic Structure in a Metal/Ferroelectric Heterostructure under Applied Bias

The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO3/Nb-doped SrTiO3, under in-situ bias voltage is investigated using X-Ray Photoelectron Spectroscopy. The full band alignment is measured and is supported by transport measurements. Barrier heights depend on interface chemistry and on the FE polarization. A differential response of the core levels to applied bias as a function of the polarization state is observed, consistent with Callen charge variations near the interface.

preprint2013arXiv

Time-resolved PhotoEmission Spectroscopy on a Metal/Ferroelectric Heterostructure

In thin film ferroelectric capacitor the chemical and electronic structure of the electrode/FE interface can play a crucial role in determining the kinetics of polarization switching. We investigate the electronic structure of a Pt/BaTiO3/SrTiO3:Nb capacitor using time-resolved photoemission spectroscopy. The chemical, electronic and depth sensitivity of core level photoemission is used to probe the transient response of different parts of the upper electrode/ferroelectric interface to voltage pulse induced polarization reversal. The linear response of the electronic structure agrees quantitatively with a simple RC circuit model. The non-linear response due to the polarization switch is demonstrated by the time-resolved response of the characteristic core levels of the electrode and the ferroelectric. Adjustment of the RC circuit model allows a first estimation of the Pt/BTO interface capacitance. The experiment shows the interface capacitance is at least 100 times higher than the bulk capacitance of the BTO film, in qualitative agreement with theoretical predictions from the literature.

preprint2011arXiv

Step velocity tuning of SrRuO3 step flow growth on SrTiO3

Taking advantage of vicinal (001) SrTiO3 substrates with different mean terrace widths, the heteroepitaxial growth of SrRuO3 in the step flow mode has been mapped as a function of mean step velocity. Transition between stable and unstable step flow is shown to occur at a well-defined critical step velocity, with a step bunching instability observed below this threshold. The ability to pass from unstable to stable step flow during growth upon increasing the mean step velocity is demonstrated. This result is discussed in terms of a stress-based driving force for step bunching in competition with an effective step-up adatom current.