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Researcher profile

V. Orlyanchik

V. Orlyanchik contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.supr-concond-mat.dis-nncond-mat.mes-hallcond-mat.str-el

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Published work

3 published item(s)

preprint2013arXiv

Low frequency resistance and critical current fluctuations in Al-based Josephson junctions

We present low-temperature measurements of the low-frequency $1/f$ noise arising from an ensemble of two-level fluctuators in the oxide barrier of Al/AlO$_{x}$/Al Josephson junctions. The fractional noise power spectrum of the critical-current and normal-state resistance have similar magnitudes and scale linearly with temperature, implying an equivalence between the two. Compiling our results and published data, we deduce the area and temperature scaling of the noise for AlO$_{x}$ barrier junctions. We find that the density of two-level fluctuators in the junction barrier is similar to the typical value in glassy systems. We discuss the implications and consistency with recent qubit experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Anomalous Noise in the Pseudogap Regime of YBa$_2$Cu$_3$O$_{7-δ}$

An unusual noise component is found near and below about 250 K in the normal state of underdoped YBCO and Ca-YBCO films. This noise regime, unlike the more typical noise above 250 K, has features expected for a symmetry-breaking collective electronic state. These include large individual fluctuators, a magnetic sensitivity, and aging effects. A possible interpretation in terms of fluctuating charge nematic order is presented.

0 citations0 reviewsNo code linkedOpen access
preprint2002arXiv

Impairing the memory of an electron-glass by IR excitation

We study the influence of various excitations on the anomalous field effect observed in insulating indium-oxide films. In conductance G versus gate-voltage Vg measurements one observes a characteristic cusp around the Vg at which the system has equilibrated. In the absence of any disturbance this cusp may persist for a long time after a new gate voltage was imposed on the sample and hence reflects a memory of the previous equilibrium state. This memory is believed to be related to the correlations between electrons. Here we show that exciting the conduction electrons by exposing the sample to IR light degrades this memory. We argue that any excitation that randomizes the system destroys the correlations and therefore impairs the memory.

0 citations0 reviewsNo code linkedOpen access