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V. N. Mantsevich

V. N. Mantsevich appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.othercond-mat.str-el

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Published work

17 published item(s)

preprint2016arXiv

Control of the non-stationary spin-polarized tunneling currents by applied bias changing

We reveal that for the single Anderson impurity localized between non-magnetic leads of the tunneling contact $"$magnetic$"$ state can be distinguished from the $"$paramagnetic$"$ one only by the analysis of the non-stationary system characteristics or the behavior of the second order correlation functions for the localized electrons occupation numbers. We investigate the response of the system to the sudden shift of the applied bias and to the switching $"$on$"$ the coupling to the second lead of the tunneling contact. We demonstrate that in addition to the changes of the relaxation regimes and typical relaxation time scales, non-stationary spin-polarized currents flowing in the both leads are present in the system. Spin polarization and direction of the non-stationary currents in each lead can be simultaneously inverted by the sudden changing of the applied bias voltage.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

External field induced switching of tunneling current in the coupled quantum dots

We investigated the tunneling current peculiarities in the system of two coupled by means of the external field quantum dots (QDs) weakly connected to the electrodes in the presence of Coulomb correlations. It was found that tuning of the external field frequency induces fast multiple tunneling current switching and leads to the negative tunneling conductivity. Special role of multi-electrons states was demonstrated. Moreover we revealed conditions for bistable behavior of the tunneling current in the coupled QDs with Coulomb correlations.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Time evolution of an entangled initial state in coupled quantum dots with Coulomb correlations

We analyzed the dynamics of the initial singlet electronic state in the two interacting single-level quantum dots (QDs) with Coulomb correlations, weakly tunnel coupled to an electronic reservoir. We obtained correlation functions of all orders for the electrons in the QDs by decoupling high-order correlations between localized and band electrons in the reservoir. We proved that for arbitrary mixed state the concurrence and entanglement can be determined from the average value of particular combinations of electron's pair correlation functions. Analysis of the pair correlation functions time evolution allows to follow the changes of concurrence and entanglement during the relaxation processes. We investigated the dependence of concurrence on the value of Coulomb interaction and the energy levels spacing and found it's non-monotonic behavior in the non-resonant case. We also demonstrated that the behavior of pair correlation functions for two-electron entangled state in coupled QDs points to the fulfillment of the Hund's rule for the strong Coulomb interaction. We revealed the appearance of dynamical inverse occupation of the QDs energy levels during the relaxation processes. Our results open up further perspectives in solid state quantum information based on the controllable dynamics of the entangled electronic states.

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preprint2014arXiv

Tunneling transport through multi-electrons states in coupled quantum dots with Coulomb correlations

We investigated the peculiarities of non-equilibrium charge configurations in the system of two strongly coupled quantum dots (QDs) weakly connected to the reservoirs in the presence of Coulomb correlations. We revealed that total electron occupation demonstrates in some cases significant decreasing with increasing of applied bias - contrary to the situation when Coulomb correlations are absent and found well pronounced ranges of system parameters where negative tunneling conductivity appears due to the Coulomb correlations.

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preprint2013arXiv

In situ visualization of Ni-Nb bulk metallic glasses phase transition

We report the results of the Ni-based bulk metallic glass structural evolution and crystallization behavior in situ investigation. The X-ray diffraction (XRD), transmission electron microscopy (TEM), nano-beam diffraction (NBD), differential scanning calorimetry (DSC), radial distribution function (RDF) and scanning probe microscopy/spectroscopy (STM/STS) techniques were applied to analyze the structure and electronic properties of Ni63.5Nb36.5 glasses before and after crystallization. It was proved that partial surface crystallization of Ni63.5Nb36.5 can occur at the temperature lower than for the full sample crystallization. According to our STM measurements the primary crystallization is originally starting with the Ni3Nb phase formation. It was shown that surface crystallization drastically differs from the bulk crystallization due to the possible surface reconstruction. The mechanism of Ni63.5Nb36.5 glass alloy 2D-crystallization was suggested, which corresponds to the local metastable (3x3)-Ni(111) surface phase formation. The possibility of different surface nano-structures development by the annealing of the originally glassy alloy in ultra high vacuum at the temperature lower, than the crystallization temperature was shown. The increase of mean square surface roughness parameter Rq while moving from glassy to fully crystallized state can be caused by concurrent growth of Ni3Nb and Ni6Nb7 bulk phases. The simple empirical model for the estimation of Ni63.5Nb36.5 cluster size was suggested, and the obtained values (7.64 A, 8.08 A) are in good agreement with STM measurements data (8 A-10 A).

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preprint2012arXiv

Charge and spin configurations in the coupled quantum dots with Coulomb correlations induced by tunneling current

We investigated the peculiarities of non-equilibrium charge states and spin configurations in the system of two strongly coupled quantum dots (QDs) weakly connected to the electrodes in the presence of Coulomb correlations. We analyzed the modification of non-equilibrium charge states and different spin configurations of the system in a wide range of applied bias voltage and revealed well pronounced ranges of system parameters where negative tunneling conductivity appears due to the Coulomb correlations.

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preprint2012arXiv

Coulomb correlations effects on localized charge relaxation in the coupled quantum dots

We analyzed localized charge time evolution in the system of two interacting quantum dots (QD) (artificial molecule) coupled with the continuous spectrum states. We demonstrated that Coulomb interaction modifies relaxation rates and is responsible for non-monotonic time evolution of the localized charge. We suggested new mechanism of this non-monotonic charge time evolution connected with charge redistribution between different relaxation channels in each QD.

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preprint2012arXiv

Localized charge bifurcation in the coupled quantum dots

We analyzed theoretically localized charge relaxation in a double quantum dot (QD) system coupled with continuous spectrum states in the presence of localized electrons Coulomb interaction in a single QD. We have found that for a wide range of system parameters charge relaxation occurs through two stable regimes with significantly different relaxation rates. A peculiar time moment exists in the system at which rapid switching between stable regimes takes place. We consider this phenomenon to be applicable for creation of active elements in nano-electronics based on the fast transition effect between two stable states.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Non-stationary effects in the coupled quantum dots influenced by the electron-phonon interaction

We analyzed time evolution of the localized charge in the system of two interacting single level quantum dots (QDs) coupled with the continuous spectrum states in the presence of electron-phonon interaction. We demonstrated that electron-phonon interaction leads to the increasing of localized charge relaxation rate. We also found that several time scales with different relaxation rates appear in the system in the case of non-resonant tunneling between the dots. We revealed the formation of oscillations in the filling numbers time evolution caused by the emission and adsorption processes of phonons.

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preprint2012arXiv

Non-stationary effects in the system of coupled quantum dots influenced by the Coulomb correlations

We found analytical solution for the time evolution of localized electron density in a system of two coupled single-level quantum dots (QDs) connected with continuous spectrum states in the presence of Coulomb interaction. This solution takes into account QD electrons correlation functions of all orders neglecting any correlations between localized and conduction electron filling numbers. We demonstrated that several time scales with the strongly different relaxation rates appear in the system for a wide range of the Coulomb interaction value. We revealed that specific non monotonic behavior of charge relaxation in QD takes place due to Coulomb correlations. We also found out that besides the usual charge oscillations with the period determined by the detuning between the energy levels of the QDs a new effect of period doubling appears in the presence of Coulomb interaction at particular range of the system parameters.

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preprint2011arXiv

Correlation induced switching of local spatial charge distribution in two-level system

We present theoretical investigation of spatial charge distribution in the two-level system with strong Coulomb correlations by means of Heisenberg equations analysis for localized states total electron filling numbers taking into account pair correlations of local electron density. It was found that tunneling current through nanometer scale structure with strongly coupled localized states causes Coulomb correlations induced spatial redistribution of localized charges. Conditions for inverse occupation of two-level system in particular range of applied bias caused by Coulomb correlations have been revealed. We also discuss possibility of charge manipulation in the proposed system.

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preprint2011arXiv

Non-adiabatic electron charge pumping in coupled semiconductor quantum dots

The possibility of non-adiabatic electron pumping in the system of three coupled quantum dots attached to the leads is discussed. We have found out that periodical changing of energy level position in the middle quantum dot results in non zero mean tunneling current appeared due to non-adiabatic non-equilibrium processes. The same principle can be used for fabrication of a new class of semiconductor electronic devices based on non-stationary non-equilibrium currents. As an example we propose a nanometer quantum emitter with non-stationary inverse level occupation achieved by electron pumping.

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preprint2011arXiv

The effect of Coulomb correlations on non-equilibrium charge redistribution tuned by the tunneling current

It was shown that tunneling current flowing through a system with Coulomb correlations leads to charge redistribution between the different localized states. Simple model consisting of two electron levels have been analyzed by means of Heisenberg motion equations taking into account all order correlations of electron filling numbers in localized states exactly. We consider various relations between Coulomb interaction and localized electron energies. Sudden jumps of electron density at each level in a certain range of applied bias have been found. We found that for some parameter range inverse occupation in the two-level system appeared due to Coulomb correlations. It was shown also that Coulomb correlations lead to appearance of negative tunneling conductivity at certain relation between the values of tunneling rates from the two electronic levels.

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preprint2011arXiv

The influence of tunneling matrix elements modification due to on-site Coulomb interaction on local tunneling conductivity

Interplay between changes of energy levels and tunneling amplitudes caused by localized electrons on-site Coulomb interaction depending on non-equilibrium electron filling numbers is analyzed. Specific features of local tunneling conductivity spectra for different positions of localized states energy relative to the Fermi level have been investigated by means of self-consistent mean field approximation in the presence of non-equilibrium effects. The conditions when modifications of tunneling transfer amplitude due to changes of electron filling numbers in the presence of on-site Coulomb interaction should be taken into account in tunneling conductivity spectra have been revealed.

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preprint2010arXiv

Spatial distribution of local tunneling conductivity due to interference and Coulomb interaction effects for deep and shallow impurities on semiconductor surfaces

Spatial distribution of local tunneling conductivity was investigated for deep and shallow impurities on semiconductor surfaces. Non-equilibrium Coulomb interaction and interference effects were taken into account and analyzed theoretically with the help of Keldysh formalism. Two models were investigated: mean field self-consistent approach for shallow impurity state and Hubbard-{I} model for deep impurity state. We have found that not only above the impurity but also at the distances comparable to the lattice period both effects interference between direct and resonant tunneling channels and on-site Coulomb repulsion of localized electrons strongly modifies form of tunneling conductivity measured by the scanning tunneling microscopy/spectroscopy (STM/STS).

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preprint2009arXiv

Spatial distribution of local density of states in vicinity of impurity on semiconductor surface

We present the results of detailed theoretical investigations of changes in local density of total electronic surface states in 2D anisotropic atomic semiconductor lattice in vicinity of impurity atom for a wide range of applied bias voltage. We have found that taking into account changes in density of continuous spectrum states leads to the formation of a downfall at the particular value of applied voltage when we are interested in the density of states above the impurity atom or even to a series of downfalls for the fixed value of the distance from the impurity. The behaviour of local density of states with increasing of the distance from impurity along the chain differs from behaviour in the direction perpendicular to the chain.

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preprint2009arXiv

Spatial effects of Fano resonance in local tunneling conductivity in vicinity of impurity on semiconductor surface

We present the results of local tunneling conductivity spatial distribution detailed theoretical investigations in vicinity of impurity atom for a wide range of applied bias voltage. We observed Fano resonance in tunneling conductivity resulting from interference between resonant tunneling channel through impurity energy level and direct tunneling channel between the tunneling contact leads. We have found that interference between tunneling channels strongly modifies form of tunneling conductivity measured by the scanning tunneling microscopy/spectroscopy (STM/STS) depending on the distance value from the impurity.

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