Researcher profile

V. Marigliano Ramaglia

V. Marigliano Ramaglia contributes to research discovery and scholarly infrastructure.

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Published work

11 published item(s)

preprint2016arXiv

Charge and heat transport of soft nanosystems in the presence of time-dependent perturbations

Soft nanosystems are electronic nanodevices, such as suspended carbon nanotubes or molecular junctions, whose transport properties are modulated by soft internal degrees of freedom, for example slow vibrational modes. In this review, effects of the electron-vibration coupling on the charge and heat transport of soft nanoscopic systems are theoretically investigated in the presence of time-dependent perturbations, such as a forcing antenna or pumping terms between the leads and the nanosystem. A well established approach valid for non-equilibrium adiabatic regimes is generalized to the case where external time-dependent perturbations are present. Then, a number of relevant applications of the method are reviewed for systems composed by a quantum dot (or molecule) described by a single electronic level coupled to a vibrational mode. Before introducing time-dependent perturbations, the range of validity of the adiabatic approach is discussed showing that a very good agreement with the results of an exact quantum calculation is obtained in the limit of low level occupation. Aim of this review has been to discuss common features of different soft nanosystems under external drive. The most interesting effects induced by time-dependent perturbations are obtained when the external forcing is nearly resonant with the slow vibrational modes. Indeed, not only the external forcing can enhance the electronic response, but it also induces nonlinear regimes where the interplay between electronic and vibrational degrees of freedom plays a major role.

preprint2014arXiv

Effects of different electron-phonon couplings on spectral and transport properties of small molecule single-crystal organic semiconductors

Spectral and transport properties of small molecule single-crystal organic semiconductors have been theoretically analyzed focusing on oligoacenes, in particular on the series from naphthalene to rubrene and pentacene aiming to show that the inclusion of different electron-phonon couplings is of paramount importance to interpret accurately the properties of prototype organic semiconductors. While, in the case of rubrene, the coupling between charge carriers and low frequency inter-molecular modes is sufficient for a satisfactory description of spectral and transport properties, the inclusion of electron coupling to both low frequency inter-molecular and high frequency intra-molecular vibrational modes is needed to account for the temperature dependence of transport properties in smaller oligoacenes.

preprint2014arXiv

Noise-assisted Thouless pump in elastically deformable molecular junctions

We study a Thouless pump realized with an elastically \textit{deformable quantum dot} whose center of mass follows a non-linear stochastic dynamics. The interplay of noise, non-linear effects, dissipation and interaction with an external time-dependent driving on the pumped charge is fully analyzed. The results show that the quantum pumping mechanism not only is not destroyed by the force fluctuations, but it becomes stronger when the forcing signal frequency is tuned close to the resonance of the vibrational mode. The robustness of the quantum pump with temperature is also investigated and an exponential decay of the pumped charge is found when the coupling to the vibrational mode is present. Implications of our results for nano-electromechanical systems are also discussed.

preprint2012arXiv

Probing nonlinear mechanical effects through electronic currents: the case of a nanomechanical resonator acting as electronic transistor

We study a general model describing a self-detecting single electron transistor realized by a suspended carbon nanotube actuated by a nearby antenna. The main features of the device, recently observed in a number of experiments, are accurately reproduced. When the device is in a low current-carrying state, a peak in the current signals a mechanical resonance. On the contrary, a dip in the current is found in high current-carrying states. In the nonlinear vibration regime of the resonator, we are able to reproduce quantitatively the characteristic asymmetric shape of the current-frequency curves. We show that the nonlinear effects coming out at high values of the antenna amplitude are related to the effective nonlinear force induced by the electronic flow. The interplay between electronic and mechanical degrees of freedom is understood in terms of an unifying model including in an intrinsic way the nonlinear effects driven by the external probe.

preprint2011arXiv

Effects of electron coupling to intra- and inter-molecular vibrational modes on the transport properties of single crystal organic semiconductors

Electron coupling to intra- and inter-molecular vibrational modes is investigated in models appropriate to single crystal organic semiconductors, such as oligoacenes. Focus is on spectral and transport properties of these systems beyond perturbative approaches. The interplay between different couplings strongly affects the temperature band renormalization that is the result of a subtle equilibrium between opposite tendencies: band narrowing due to interaction with local modes, band widening due to electron coupling to non local modes. The model provides an accurate description of the mobility as function of temperature: indeed, it has the correct order of magnitude, at low temperatures, it scales as a power-law $T^{-δ}$ with the exponent $δ$ larger than unity, and, at high temperatures, shows an hopping behavior with a small activation energy.

preprint2011arXiv

Electronic transport within a quasi two-dimensional model for rubrene single-crystal field effect transistors

Spectral and transport properties of the quasi two-dimensional adiabatic Su-Schrieffer-Heeger model are studied adjusting the parameters in order to model rubrene single-crystal field effect transistors with small but finite density of injected charge carriers. We show that, with increasing temperature $T$, the chemical potential moves into the tail of the density of states corresponding to localized states, but this is not enough to drive the system into an insulating state. The mobility along different crystallographic directions is calculated including vertex corrections which give rise to a transport lifetime one order of magnitude smaller than spectral lifetime of the states involved in the transport mechanism. With increasing temperature, the transport properties reach the Ioffe-Regel limit which is ascribed to less and less appreciable contribution of itinerant states to the conduction process. The model provides features of the mobility in close agreement with experiments: right order of magnitude, scaling as a power law $T^{-γ}$, with $γ$ close or larger than two, and correct anisotropy ratio between different in-plane directions. Due to a realistic high dimensional model, the results are not biased by uncontrolled approximations.

preprint2011arXiv

Spectral, optical and transport properties of the adiabatic anisotropic Holstein model: Application to slightly doped organic semiconductors

Spectral, optical and transport properties of an anisotropic three-dimensional Holstein model are studied within the adiabatic approximation. The parameter regime is appropriate for organic semiconductors used in single crystal based field effect transistors. Different approaches have been used to solve the model: self-consistent Born approximation valid for weak electron-phonon coupling, coherent potential approximation exact for infinite dimensions, and numerical diagonalization for finite lattices. With increasing temperature, the width of the spectral functions gets larger and larger making the approximation of quasi-particle less accurate. On the contrary, their peak positions are never strongly renormalized in comparison with the bare ones. As expected, the density of states is characterized by an exponential tail corresponding to localized states at low temperature. For weak electron-lattice coupling, the optical conductivity follows a Drude behavior, while, for intermediate electron-lattice coupling, a temperature dependent peak is present at low frequency. For high temperatures and low particle densities, the mobility always exhibits a power-law behavior as function of temperature. With decreasing the particle density, at low temperature, the mobility shows a transition from metallic to insulating behavior. Results are discussed in connection with available experimental data.

preprint2011arXiv

Stochastic dynamics for a single vibrational mode in molecular junctions

We propose a very accurate computational scheme for the dynamics of a classical oscillator coupled to a molecular junction driven by a finite bias, including the finite mass effect. We focus on two minimal models for the molecular junction: Anderson-Holstein (AH) and two-site Su-Schrieffer-Heeger (SSH) models. As concerns the oscillator dynamics, we are able to recover a Langevin equation confirming what found by other authors with different approaches and assessing that quantum effects come from the electronic subsystem only. Solving numerically the stochastic equation, we study the position and velocity distribution probabilities of the oscillator and the electronic transport properties at arbitrary values of electron-oscillator interaction, gate and bias voltages. The range of validity of the adiabatic approximation is established in a systematic way by analyzing the behaviour of the kinetic energy of the oscillator. Due to the dynamical fluctuations, at intermediate bias voltages, the velocity distributions deviate from a gaussian shape and the average kinetic energy shows a non monotonic behaviour. In this same regime of parameters, the dynamical effects favour the conduction far from electronic resonances where small currents are observed in the infinite mass approximation. These effects are enhanced in the two-site SSH model due to the presence of the intermolecular hopping t. Remarkably, for sufficiently large hopping with respect to tunneling on the molecule, small interaction strengths and at intermediate bias (non gaussian regime), we point out a correspondence between the minima of the kinetic energy and the maxima of the dynamical conductance.

preprint2010arXiv

Behavior of quantum entropies in polaronic systems

Quantum entropies and state distances are analyzed in polaronic systems with short range (Holstein model) and long range (Fr$\ddot{o}$hlich model) electron-phonon coupling. These quantities are extracted by a variational wave function which describes very accurately polaron systems with arbitrary size in all the relevant parameter regimes. With the use of quantum information tools, the crossover region from weak to strong coupling regime can be characterized with high precision. Then, the linear entropy is found to be very sensitive to the range of the electron-phonon coupling and the adiabatic ratio. Finally, the entanglement entropy is studied as a function of the system size pointing out that it not bounded, but scales as the logarithm of the size either for weak electron-phonon coupling or for short range interaction. This behavior is ascribed to the peculiar coupling induced by the single electron itinerant dynamics on the phonon subsystem.

preprint2010arXiv

Electron-lattice and strain effects in manganite heterostructures: the case of a single interface

A correlated inhomogeneous mean-field approach is proposed in order to study a tight-binding model of the manganite heterostructures (LaMnO3)2n/(SrMnO3)n with average hole doping x = 1/3. Phase diagrams, spectral and optical properties of large heterostructures (up to 48 sites along the growth direction) with a single interface are discussed analyzing the effects of electron-lattice anti-adiabatic fluctuations and strain. The formation of a metallic ferromagnetic interface is quite robust with varying the strength of electron-lattice coupling and strain, though the size of the interface region is strongly dependent on these interactions. The density of states never vanishes at the chemical potential due to the formation of the interface, but it shows a rapid suppression with increasing the electron-lattice coupling. The in-plane and out-of-plane optical conductivities show sharp differences since the in-plane response has metallic features, while the out-of-plane one is characterized by a transfer of spectral weight to high frequency. The in-plane response mainly comes from the region between the two insulating blocks, so that it provides a clear signature of the formation of the metallic ferromagnetic interface.

preprint2010arXiv

Multiple double-exchange mechanism by Mn$^{2+}$-doping in manganite compounds

Double-exchange mechanisms in RE$_{1-x}$AE$_{x}$MnO$_{3}$ manganites (where RE is a trivalent rare-earth ion and AE is a divalent alkali-earth ion) relies on the strong exchange interaction between two Mn$^{3+}$ and Mn$^{4+}$ ions through interfiling oxygen 2p states. Nevertheless, the role of RE and AE ions has ever been considered "silent" with respect to the DE conducting mechanisms. Here we show that a new path for DE-mechanism is indeed possible by partially replacing the RE-AE elements by Mn$^{2+}$-ions, in La-deficient La$_{x}$MnO$_{3-δ}$ thin films. X-ray absorption spectroscopy demonstrated the relevant presence of Mn$^{2+}$ ions, which is unambiguously proved to be substituted at La-site by Resonant Inelastic X-ray Scattering. Mn$^{2+}$ is proved to be directly correlated to the enhanced magneto-transport properties because of an additional hopping mechanism trough interfiling Mn$^{2+}$-ions, theoretically confirmed by calculations within the effective single band model. The very idea to use Mn$^{2+}$ both as a doping element and an ions electronically involved in the conduction mechanism, has never been foreseen, revealing a new phenomena in transport properties of manganites. More important, such a strategy might be also pursed in other strongly correlated materials.