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Published work
High power lasers have proven being capable to produce high energy gamma rays, charged particles and neutrons to induce all kinds of nuclear reactions. At ELI, the studies with high power lasers will enter for the first time into new domains of power and intensities.
Even after 25 years of research the pairing mechanism and - at least for electron doped compounds - also the order parameter symmetry of the high transition temperature (high-Tc) cuprate superconductors is still under debate. One of the reasons is the complex crystal structure of most of these materials. An exception are the infinite layer (IL) compounds consisting essentially of CuO2 planes. Unfortunately, these materials are difficult to grow and, thus, there are only few experimental investigations. Recently, we succeeded in depositing high quality films of the electron doped IL compound Sr1-xLaxCuO2 (SLCO), with x approximately 0.15, and on the fabrication of well-defined grain boundary Josephson junctions (GBJs) based on such SLCO films. Here we report on a phase sensitive study of the superconducting order parameter based on GBJ SQUIDs from a SLCO film grown on a tetracrystal substrate. Our results show that also the parent structure of the high-Tc cuprates has dx2-y2-wave symmetry, which thus seems to be inherent to cuprate superconductivity.
A chemical etching method was developed for (110) and (001) NdGaO3 single crystal substrates in order to obtain an atomically flat GaO2-x - terminated surface. Depending on the surface step density the substrates were etched in pH-controlled NH4F- or NH4Cl-based solutions, followed by an annealing step at temperatures of 800-1000oC, in air or in oxygen flow, in order to recrystallize the surface. Atomic Force Microscopy (AFM) and high-pressure Reflection High Energy Electron Diffraction (RHEED) were used to analyse the surface morphology of the samples after every treatment. Studies on the chemistry and characteristics of the terminating layer showed that the chemically etched NdGaO3 substrate surface has a GaO2-x termination and that the (110) and (001) NdGaO3 surfaces are characterized by a different free surface energy, which is lower for latter.