Researcher profile

V. Krapek

V. Krapek contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2016arXiv

Polarization anisotropy of the emission from type-II quantum dots

We study the polarization response of the emission from type-II GaAsSb capped InAs quantum dots. The theoretical prediction based on the calculations of the overlap integrals of the single-particle states obtained in the k.p framework is given. This is verified experimentally by polarization resolved photoluminescence measurements on samples with the type-II confinement. We show that the polarization anisotropy might be utilized to find the vertical position of the hole wavefunction and its orientation with respect to crystallographic axes of the sample. A proposition for usage in the information technology as a room temperature photonic gate operating at the communication wavelengths as well as a simple model to estimate the energy of fine-structure splitting for type-II GaAsSb capped InAs QDs are given.

preprint2013arXiv

Doping Induced Spin State Transition in LaCoO3: Dynamical Mean-Field Study

Hole and electron doped LaCoO3 is studied using dynamical mean-field theory. The one-particle spectra are analyzed and compared to the available experimental data, in particular the x-ray absorption spectra. Analyzing the temporal spin-spin correlation functions we find the atomic intermediate spin state is not important for the observed Curie-Weiss susceptibility. Contrary to the commonly held view about the roles played by the t2g and eg electrons we find narrow quasiparticle bands of t2g character crossing the Fermi level accompanied by strongly damped eg excitations.

preprint2010arXiv

Effects of variable anisotropic-strain on the emission of neutral excitons confined in epitaxial quantum dots

We study the effect of elastic anisotropic biaxial strain on the light emitted by neutral excitons confined in different kinds of semiconductor quantum dots (QDs). We find that the light polarization rotates by up to 80 degree and the excitonic fine structure splitting varies by several tens of $μ$eVs as the strain is varied. By means of a continuum model we mainly ascribe the observed effects to substantial changes of the hole wave function. These results show that strain-fields of a few permill magnitude are suffcient to dramatically modify the electronic structure of QDs.