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V. Jovanovic

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cond-mat.mes-hall cond-mat.supr-con

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preprint2010arXiv

Penetration depth of electron-doped-infinite-layer Sr $_{0.88}$ La $_{0.12}$ CuO $_{2+x}$ thin films

The in-plane penetration depth of Sr $_{0.88}$ La $_{0.12}$ CuO $_{2+x}$ thin films at various doping obtained from oxygen reduction has been measured, using AC susceptibility measurements. For the higher doping samples, the superfluid density deviates strongly from the s-wave behavior, suggesting, in analogy with other electron-doped cuprates, a contribution from a nodal hole pocket, or a small gap on the Fermi surface such as an anisotropic s-wave order parameter. The low value of the superfluid densities, likely due to a strong doping-induced disorder, places the superconducting transition of our samples in the phase-fluctuation regime.

preprint2010arXiv

Strain determination in the Si channel above a single SiGe island inside a field effect transistor using nanobeam x-ray diffraction

SiGe islands are used to induce tensile strain in the Si channel of Field Effect Transistors to achieve larger transconductance and higher current driveabilities. We report on x-ray diffraction experiments on a single fully-processed and functional device with a TiN+Al gate stack and source, gate, and drain contacts in place. The strain fields in the Si channel were explored using an x-ray beam focused to 400 nm diameter combined with finite element simulations. A maximum in-plane tensile strain of about 1% in the Si channel was found, which is by a factor of three to four higher than achievable for dislocation-free tensile strained Si in state-of-the-art devices.

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V. Jovanovic

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2 publications

Penetration depth of electron-doped-infinite-layer Sr $_{0.88}$ La $_{0.12}$ CuO $_{2+x}$ thin films

Strain determination in the Si channel above a single SiGe island inside a field effect transistor using nanobeam x-ray diffraction

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V. Jovanovic

Research overview

Is this your work?

2 publications

Penetration depth of electron-doped-infinite-layer Sr0.88_{0.88}0.88​La0.12_{0.12}0.12​CuO2+x_{2+x}2+x​ thin films

Strain determination in the Si channel above a single SiGe island inside a field effect transistor using nanobeam x-ray diffraction

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Penetration depth of electron-doped-infinite-layer Sr $_{0.88}$ La $_{0.12}$ CuO $_{2+x}$ thin films