Researcher profile

V. Harkov

V. Harkov contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Spin dynamics of itinerant electrons: local magnetic moment formation and Berry phase

The state-of-the-art theoretical description of magnetic materials relies on solving effective Heisenberg spin problems or their generalizations to relativistic or multi-spin-interaction cases that explicitly assume the presence of local magnetic moments in the system. We start with a general interacting fermionic model that is often obtained in ab initio electronic structure calculations and show that the corresponding spin problem can be introduced even in the paramagnetic regime, which is characterized by a zero average value of the magnetization. Further, we derive a physical criterion for the formation of the local magnetic moment and confirm that the latter exists already at high temperatures well above the transition to the ordered magnetic state. The use of path-integral techniques allows us to disentangle spin and electronic degrees of freedom and to carefully separate rotational dynamics of the local magnetic moment from Higgs fluctuations of its absolute value. It also allows us to accurately derive the topological Berry phase and relate it to a physical bosonic variable that describes dynamics of the spin degrees of freedom. As the result, we demonstrate that the equation of motion in the case of a large magnetic moment takes a conventional Landau-Lifshitz form that explicitly accounts for the Gilbert damping due to itinerant nature of the original electronic model.

preprint2021arXiv

Coexisting charge density wave and ferromagnetic instabilities in monolayer InSe

Recently fabricated InSe monolayers exhibit remarkable characteristics that indicate the potential of this material to host a number of many-body phenomena. Here, we consistently describe collective electronic effects in hole-doped InSe monolayers using advanced many-body techniques. To this end, we derive a realistic electronic-structure model from first principles that takes into account the most important characteristics of this material, including a flat band with prominent van Hove singularities in the electronic spectrum, strong electron-phonon coupling, and weakly-screened long-ranged Coulomb interactions. We calculate the temperature-dependent phase diagram as a function of band filling and observe that this system is in a regime with coexisting charge density wave and ferromagnetic instabilities that are driven by strong electronic Coulomb correlations. This regime can be achieved at realistic doping levels and high enough temperatures, and can be verified experimentally. We find that the electron-phonon interaction does not play a crucial role in these effects, effectively suppressing the local Coulomb interaction without changing the qualitative physical picture.