Researcher profile

V. G. Yefremenko

V. G. Yefremenko contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Scintillation yield from electronic and nuclear recoils in superfluid $^4$He

Superfluid $^4$He is a promising target material for direct detection of light ($<$ 1 GeV) dark matter. Possible signal channels available for readout in this medium include prompt photons, triplet excimers, and roton and phonon quasiparticles. The relative yield of these signals has implications for the sensitivity and discrimination power of a superfluid $^4$He dark matter detector. Using a 16~cm$^3$ volume of 1.75~K superfluid $^4$He read out by six immersed photomultiplier tubes, we measured the scintillation from electronic recoils ranging between 36.3 and 185 keV$_\mathrm{ee}$, yielding a mean signal size of $1.25^{+0.03}_{-0.03}$~phe/keV$_\mathrm{ee}$, and nuclear recoils from 53.2 to 1090 keV$_\mathrm{nr}$. We compare the results of our relative scintillation yield measurements to an existing semiempirical model based on helium-helium and electron-helium interaction cross sections. We also study the behavior of delayed scintillation components as a function of recoil type and energy, a further avenue for signal discrimination in superfluid $^4$He.

preprint2019arXiv

Developing AlMn films for Argonne TES fabrication

The reference design for the next-generation cosmic microwave background (CMB) experiment, CMB-S4, relies on large arrays of transition edge sensor (TES) bolometers coupled to Superconducting Quantum Interference Device (SQUID)-based readout systems. Mapping the CMB to near cosmic variance limits will enable the search for signatures of inflation and constrain dark energy and neutrino physics. AlMn TESes provide simple film manufacturing and highly uniform arrays over large areas to meet the requirements of the CMB-S4 experiment. TES parameters such as critical temperature and normal resistance must be tuned to experiment specifications and can be varied based on geometry and steps in the fabrication process such as deposition layering, geometry, and baking time and temperature. Using four-terminal sensing, we measured $T_C$ and $R_N$ of AlMn 2000 ppm films and devices of varying thicknesses fabricated at Argonne National Laboratory to motivate device geometries and fabrication processes to tune $T_C$ to 150-200 mK and $R_N$ to $\sim$10 mOhms. Measurements of IV curves and time constants for the resulting devices of varying leg length were made using time-division SQUID multiplexing, and determined $T_C$, $G$, $k$, $f_{3db}$, and $R_N$. We present the results of these tests along with the geometries and fabrication steps used to tune the device parameters to the desired limits.