Source author record

V. G. Tyuterev

V. G. Tyuterev appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mtrl-sci astro-ph.EP astro-ph.GA astro-ph.IM astro-ph.SR

Catalog footprint

What is connected

3works

5topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2026arXiv

The HITRAN2024 methane update

Spectroscopic parameters of methane from many different studies were gathered to improve the HITRAN database towards its 2024 version. After a validation process using high-resolution FTS and CRDS spectra, about 80,000 lines of the four most abundant isotopologues were replaced from the dyad to the triacontad regions. These changes amount to 51,000 transition wavenumbers, 18,000 line intensities, 33,000 pressure-broadening half-widths, and 3300 assignments. 44,000 new lines were added with 16,000 old lines removed, extending the database from 12,000 cm$^{-1}$ up to 14,000 cm$^{-1}$, and covering some gaps. A greater focus was brought on the pentad, octad, and tetradecad regions, targeted by several remote sensing instruments. In these regions, comparisons of spectral fits from multiple line lists were performed, taking only the parameters that provide best fit for each line. In the $ν_3$ band, in addition to replacing the previous values, speed-independent pressure broadening parameters of $^{12}$CH$_4$ were gathered and used to fit Padé-approximant functions. These functions then replaced any outdated experimental data in $ν_3$, missing data in the new lines, as well as the values that were determined to be outside their physical boundaries. The CH$_3$D broadening parameters were replaced in the same manner, for missing and low or high values, using a semi-empirical formula instead.

preprint2015arXiv

Electron-phonon relaxation and excited electron distribution in gallium nitride

We develop a theory of energy relaxation in semiconductors and insulators highly excited by the long-acting external irradiation. We derive the equation for the non-equilibrium distribution function of excited electrons. The solution for this function breaks up into the sum of two contributions. The low-energy contribution is concentrated in a narrow range near the bottom of the conduction band. It has the typical form of a Fermi distribution with an effective temperature and chemical potential. The effective temperature and chemical potential in this low-energy term are determined by the intensity of carriers' generation, the speed of electron-phonon relaxation, rates of inter-band recombination and electron capture on the defects. In addition, there is a substantial high-energy correction. This high-energy 'tail' covers largely the conduction band. The shape of the high-energy 'tail' strongly depends on the rate of electron-phonon relaxation but does not depend on the rates of recombination and trapping. We apply the theory to the calculation of a non-equilibrium distribution of electrons in irradiated GaN. Probabilities of optical excitations from the valence to conduction band and electron-phonon coupling probabilities in GaN were calculated by the density functional perturbation theory. Our calculation of both parts of distribution function in gallium nitride shows that when the speed of electron-phonon scattering is comparable with the rate of recombination and trapping then the contribution of the non-Fermi 'tail' is comparable with that of the low-energy Fermi-like component. So the high-energy contribution can affect essentially the charge transport in the irradiated and highly doped semiconductors.

preprint2012arXiv

Electron-phonon relaxation and excited electron distribution in zinc oxide and anatase

We propose a first-principle method for evaluations of the time-dependent electron distribution function of excited electrons in the conduction band of semiconductors. The method takes into account the excitations of electrons by external source and the relaxation to the bottom of conduction band via electron-phonon coupling. The methods permits calculations of the non-equilibrium electron distribution function, the quasi-stationary distribution function with steady-in-time source of light, the time of setting of the quasi-stationary distribution and the time of energy loss via relaxation to the bottom of conduction band. The actual calculations have been performed for titanium dioxide in the anatase structure and zinc oxide in the wurtzite structure. We find that the quasi-stationary electron distribution function for ZnO is a fermi-like curve that rises linearly with increasing excitation energy whereas the analogous curve for anatase consists of a main peak and a shoulder. The calculations demonstrate that the relaxation of excited electrons and the setting of the quasi-stationary distribution occur within the time no more than 500 fsec for ZnO and 100 fsec for anatase. We also discuss the applicability of the effective phonon model with energy-independent electron-phonon transition probability. We find that the model only reproduces the trends in changing of the characteristic times whereas the precision of such calculations is not high. The rate of energy transfer to phonons at the quasi-stationary electron distribution also have been evaluated and the effect of this transfer on the photocatalyses has been discussed. We found that for ZnO this rate is about 5 times less than in anatase.