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Researcher profile

V. G. Sathe

V. G. Sathe contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-el

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Published work

5 published item(s)

preprint2022arXiv

Correlation between spin-phonon coupling and magneto-electric effects in CoFe2O4/PMN-PT nanocomposite: Raman Spectroscopy and XMCD study

We have investigated the coupling of lattice with spin via strain interactions in the CoFe2O4/PMN-PT composite system. X-ray diffraction and Raman spectroscopic studies illustrate a remarkable modification in CoFe2O4lattice across Curie temperature (450 K) of PMN-PT. Subsequently, CoFe2O4/PMN-PT composite reveals a sudden drop in magnetic moment across Tc of PMN-PT (450 K). However,theindependent CoFe2O4phasedisplaystypical ferromagnetic behaviour across this temperature. These findings establish spin-lattice coupling owing to th interfacial strain transfer between CoFe2O4 and PMN-PT in composite. The strain intractions leads to magneto-electric coupling, evidenced by measuring magentization and magneto-electric coefficient for the electric field poled and unploed CoFe2O4/PMN-PT composite samples. X-ray magnetic circular dichroism (XMCD) analysis establishes that the cation (Fe3+/Co2+) redistribution occurs on tetrahedral and octahedral site in the electrically poled CoFe2O4/PMN-PT composite, confirming the coupling between magnetic and electric ordering in the composite. The magneto-electric coupling coefficient alpha vs dc magnetic field curves revealed hysteretic behavior and enhanced α values after electric poling, which originates from the strain induced modifications in the magnetic domains configuration of composite in the poled samples. These findings suggest that the existence of spin lattice coupling may leads to the mechanism of strong magneto-electric effects via strain interactions in CoFe2O4/PMN-PT composite.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Optical control of in-plane domain configuration and domain wall motion in ferroelectric and ferroelastic

The sensitivity of ferroelectric domain walls to external stimuli makes them functional entities in nanoelectronic devices. Specifically, optically driven domain reconfiguration with in-plane polarization is advantageous and thus highly sought. Here, we show the existence of in-plane polarized sub-domains imitating a single domain state and reversible optical control of its domain wall movement in a single-crystal of ferroelectric BaTiO3. Similar optical control in the domain configuration of non-polar ferroelastic material indicates long-range ferroelectric polarization is not essential for the optical control of domain wall movement. Instead, flexoelectricity is found to be an essential ingredient for the optical control of the domain configuration and hence, ferroelastic materials would be another possible candidate for nanoelectronic device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Imaging of Strain Driven Magnetic Domains and Strong Spin-Phonon Coupling in Epitaxial Thin Films of SrRuO3

Epitaxial thin films of SrRuO3 with large strain disorder were grown using pulsed laser deposition method which showed two distinct transition temperatures in Magnetic measurements. For the first time, we present visual evolution of magnetic domains across the two transitions using Magnetic force microscopy on these films. The study clearly showed that the magnetic anisotropy corresponding to the two transitions is different. It is observed that the perpendicular magnetic anisotropy is dominating in films which results in domain spin orientation preferably in out of plane direction. The Raman studies showed that the lattice is highly influenced by the magnetic order. The analysis of the phonon spectra around magnetic transition reveals the existence of strong spin-phonon coupling and the calculations resulted in spin-phonon coupling strength (λ) values of λ ~ 5 cm-1 and λ ~ 8.5 cm-1, for SrRuO3 films grown on LSAT and SrTiO3 single crystal substrates, respectively.

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preprint2019arXiv

Role of the V-V dimerization in insulator-metal transition and optical transmittance of pure and doped VO2 thin films

Insulator to metal (IMT) transition (T$_t$ $\sim$ 341 K) in the VO2 accompanies transition from an infrared (IR) transparent to IR opaque phase. Tailoring of the IMT and associated IR switching behavior can offer potential thermochromic applications. Here we report on effects of the W and the Tb doping on the IMT and associated structural, electronic structure and optical properties of the VO2 thin film. Our results show that the W doping significantly lowers IMT temperature ($\sim$ 292 K to $\sim$ 247 K for 1.3\% W to 3.7\% W) by stabilizing the metallic rutile, $\it{R}$, phase while Tb doping does not alter the IMT temperature much and retains the insulating monoclinic, $\it{M1}$, phase at room temperature. It is observed that the W doping albeit significantly reduces the IR switching temperature but is detrimental to the solar modulation ability, contrary to the Tb doping effects where higher IR switching temperature and solar modulation ability is observed. The IMT behavior, electrical conductivity and IR switching behavior in the W and the Tb doped thin films are found to be directly associated with the spectral changes in the V 3$\it{d_{\|}}$ states.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Strain Healing of Spin-Orbit Coupling: A Cause for Enhanced Magnetic Moment in Epitaxial SrRuO3 Thin Films

Enhanced magnetic moment and coercivity in SrRuO3 thin films are significant issues for advanced technological usages and hence are researched extensively in recent times. Most of the previous reports on thin films with enhanced magnetic moment attributed the high spin state for the enhancement. Our magnetization results show high magnetic moment of 3.3 Bohr-magnetron/Ru ion in the epitaxial thin films grown on LSAT substrate against 1.2 Bohr-magnetron/Ru ion observed in bulk compound. Contrary to the expectation the Ru ions are found to be in low spin state and the orbital moment is shown to be contributing significantly in the enhancement of magnetic moment. We employed x-ray absorption spectroscopy and resonant valance band spectroscopy to probe the spin state and orbital contributions in these films. The existence of strong spin-orbit coupling responsible for the de-quenching of the 4d orbitals is confirmed by the observation of the non-statistical large branching ratio at the Ru M2,3 absorption edges. The relaxation of orbital quenching by strain engineering provides a new tool for enhancing magnetic moment. Strain disorder is shown to be an efficient mean to control the spin-orbit coupling.

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