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V. Drchal

V. Drchal contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci cond-mat.other cond-mat.mes-hall

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preprint2020arXiv

Magnetic properties of Mn-doped Bi$_2$Se$_3$ topological insulators: ab initio calculations

Doping Bi$_2$Se$_3$ by magnetic ions represents an interesting problem since it may break the time reversal symmetry needed to maintain the topological insulator character. Mn dopants in Bi$_2$Se$_3$ represent one of the most studied examples here. However, there is a lot of open questions regarding their magnetic ordering. In the experimental literature different Curie temperatures or no ferromagnetic order at all are reported for comparable Mn concentrations. This suggests that magnetic ordering phenomena are complex and highly susceptible to different growth parameters, which are known to affect material defect concentrations. So far theory focused on Mn dopants in one possible position, and neglected relaxation effects as well as native defects. We have used ab initio methods to calculate the Bi$_2$Se$_3$ electronic structure influenced by magnetic Mn dopants, and exchange interactions between them. We have considered two possible Mn positions, the substitutional and interstitial one, and also native defects. We have found a sizable relaxation of atoms around Mn, which affects significantly magnetic interactions. Surprisingly, very strong interactions correspond to a specific position of Mn atoms separated by van der Waals gap. Based on the calculated data we performed spin dynamics simulations to examine systematically the resulting magnetic order for various defect contents. We have found under which conditions the experimentally measured Curie temperatures ${T_{\rm{C}}}$ can be reproduced, noticing that interstitial Mn atoms appear to be important here. Our theory predicts the change of ${T_{\rm{C}}}$ with a shift of Fermi level, which opens the way to tune the system magnetic properties by selective doping.

preprint2016arXiv

Defect-induced magnetic structure of CuMnSb

Ab initio total energy calculations show that the antiferromagnetic (111) order is not the ground state for the ideal CuMnSb Heusler alloy in contrast to the results of neutron diffraction experiments. It is known, that Heusler alloys usually contain various defects depending on the sample preparation. We have therefore investigated magnetic phases of CuMnSb assuming the most common defects which exist in real experimental conditions. The full-potential supercell approach and a Heisenberg model approach using the coherent potential approximation are adopted. The results of the total energy supercell calculations indicate that defects that bring Mn atoms close together promote the antiferromagnetic (111) structure already for a low critical defect concentrations ($\approx$ 3%). A detailed study of exchange interactions between Mn-moments further supports the above stabilization mechanism. Finally, the stability of the antiferromagnetic (111) order is enhanced by inclusion of electron correlations in narrow Mn-bands. The present refinement structure analysis of neutron scattering experiment supports theoretical conclusions.

preprint2016arXiv

Electronic and transport properties of the Mn-doped topological insulator Bi$_{2}$Te$_{3}$: A first-principles study

We present a first-principles study of the electronic, magnetic, and transport properties of the topological insulator Bi$_{2}$Te$_{3}$ doped with Mn atoms in substitutional (Mn$_{\rm Bi}$) and interstitial van der Waals gap positions (Mn$_{\rm i}$), which act as acceptors and donors, respectively. The effect of native Bi$_{\rm Te}$- and Te$_{\rm Bi}$-antisite defects and their influence on calculated electronic transport properties is also investigated. We have studied four models representing typical cases, namely (i) Bi$_{2}$Te$_{3}$ with and without native defects, (ii) Mn$_{\rm Bi}$ defects with and without native defects, (iii) the same but for Mn$_{\rm i}$ defects, and (iv) the combined presence of Mn$_{\rm Bi}$ and Mn$_{\rm i}$. It was found that lattice relaxations around Mn$_{\rm Bi}$ defects play an important role for both magnetic and transport properties. The resistivity is strongly influenced by the amount of carriers, their type, and by the relative positions of the Mn-impurity energy levels and the Fermi energy. Our results indicate strategies to tune bulk resistivities, and also help to uncover the location of Mn atoms in measured samples. Calculations indicate that at least two of the considered defects have to be present simultaneously in order to explain the experimental observations, and the role of interstitials may be more important than expected.

preprint2011arXiv

Pressure dependence of Curie temperature and resistivity in complex Heusler alloys

Using first-principles electronic structure calculations, we have studied the dependence of the Curie temperature on external hydrostatic pressure for random Ni2MnSn Heusler alloys doped with Cu and Pd atoms, over the entire range of dopant concentrations. The Curie temperatures are calculated by applying random-phase approximation to the Heisenberg Hamiltonian whose parameters are determined using the linear response and multiple scattering methods, based on density-functional theory. In (Ni1-x,Pdx)2MnSn alloys, the Curie temperature is found to increase with applied pressure over the whole concentration range. The crossover from the increase to the decrease of the Curie temperature with pressure takes place for Cu concentrations larger than about 70% in (Ni1-x,Cux)2MnSn Heusler alloys. The results for the reference Ni2MnSn Heusler alloy agree well with a previous theoretical study of E. Sasioglu, L. M. Sandratskii and P. Bruno Phys. Rev. B 71 214412 (2005) and also reasonably well with available experimental data. Results for the spin-disorder-induced part of the resistivity in (Ni1-x,Pdx)2MnSn Heusler alloys, calculated by using the disordered local moment model, are also presented. Finally, a qualitative understanding of the results, based on Anderson's superexchange interaction and Stearn's model of the indirect exchange interaction between localized and itinerant d electrons, is provided.

preprint2010arXiv

Magnetism of mixed quaternary Heusler alloys: (Ni,T)$_{2}$MnSn (T=Cu,Pd) as a case study

The electronic properties, exchange interactions, finite-temperature magnetism, and transport properties of random quaternary Heusler Ni$_{2}$MnSn alloys doped with Cu- and Pd-atoms are studied theoretically by means of {\it ab initio} calculations over the entire range of dopant concentrations. While the magnetic moments are only weakly dependent on the alloy composition, the Curie temperatures exhibit strongly non-linear behavior with respect to Cu-doping in contrast with an almost linear concentration dependence in the case of Pd-doping. The present parameter-free theory agrees qualitatively and also reasonably well quantitatively with the available experimental results. An analysis of exchange interactions is provided for a deeper understanding of the problem. The dopant atoms perturb electronic structure close to the Fermi energy only weakly and the residual resistivity thus obeys a simple Nordheim rule. The dominating contribution to the temperature-dependent resistivity is due to thermodynamical fluctuations originating from the spin-disorder, which, according to our calculations, can be described successfully via the disordered local moments model. Results based on this model agree fairly well with the measured values of spin-disorder induced resistivity.