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J. Kudrnovský

J. Kudrnovský appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.othercond-mat.mes-hall

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Published work

8 published item(s)

preprint2020arXiv

Magnetic properties of Mn-doped Bi$_2$Se$_3$ topological insulators: ab initio calculations

Doping Bi$_2$Se$_3$ by magnetic ions represents an interesting problem since it may break the time reversal symmetry needed to maintain the topological insulator character. Mn dopants in Bi$_2$Se$_3$ represent one of the most studied examples here. However, there is a lot of open questions regarding their magnetic ordering. In the experimental literature different Curie temperatures or no ferromagnetic order at all are reported for comparable Mn concentrations. This suggests that magnetic ordering phenomena are complex and highly susceptible to different growth parameters, which are known to affect material defect concentrations. So far theory focused on Mn dopants in one possible position, and neglected relaxation effects as well as native defects. We have used ab initio methods to calculate the Bi$_2$Se$_3$ electronic structure influenced by magnetic Mn dopants, and exchange interactions between them. We have considered two possible Mn positions, the substitutional and interstitial one, and also native defects. We have found a sizable relaxation of atoms around Mn, which affects significantly magnetic interactions. Surprisingly, very strong interactions correspond to a specific position of Mn atoms separated by van der Waals gap. Based on the calculated data we performed spin dynamics simulations to examine systematically the resulting magnetic order for various defect contents. We have found under which conditions the experimentally measured Curie temperatures ${T_{\rm{C}}}$ can be reproduced, noticing that interstitial Mn atoms appear to be important here. Our theory predicts the change of ${T_{\rm{C}}}$ with a shift of Fermi level, which opens the way to tune the system magnetic properties by selective doping.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Electronic and transport properties of the Mn-doped topological insulator Bi$_{2}$Te$_{3}$: A first-principles study

We present a first-principles study of the electronic, magnetic, and transport properties of the topological insulator Bi$_{2}$Te$_{3}$ doped with Mn atoms in substitutional (Mn$_{\rm Bi}$) and interstitial van der Waals gap positions (Mn$_{\rm i}$), which act as acceptors and donors, respectively. The effect of native Bi$_{\rm Te}$- and Te$_{\rm Bi}$-antisite defects and their influence on calculated electronic transport properties is also investigated. We have studied four models representing typical cases, namely (i) Bi$_{2}$Te$_{3}$ with and without native defects, (ii) Mn$_{\rm Bi}$ defects with and without native defects, (iii) the same but for Mn$_{\rm i}$ defects, and (iv) the combined presence of Mn$_{\rm Bi}$ and Mn$_{\rm i}$. It was found that lattice relaxations around Mn$_{\rm Bi}$ defects play an important role for both magnetic and transport properties. The resistivity is strongly influenced by the amount of carriers, their type, and by the relative positions of the Mn-impurity energy levels and the Fermi energy. Our results indicate strategies to tune bulk resistivities, and also help to uncover the location of Mn atoms in measured samples. Calculations indicate that at least two of the considered defects have to be present simultaneously in order to explain the experimental observations, and the role of interstitials may be more important than expected.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Room-temperature antiferromagnetic memory resistor

The bistability of ordered spin states in ferromagnets (FMs) provides the magnetic memory functionality. Traditionally, the macroscopic moment of ordered spins in FMs is utilized to write information on magnetic media by a weak external magnetic field, and the FM stray field is used for reading. However, the latest generation of magnetic random access memories demonstrates a new efficient approach in which magnetic fields are replaced by electrical means for reading and writing. This concept may eventually leave the sensitivity of FMs to magnetic fields as a mere weakness for retention and the FM stray fields as a mere obstacle for high-density memory integration. In this paper we report a room-temperature bistable antiferromagnetic (AFM) memory which produces negligible stray fields and is inert in strong magnetic fields. We use a resistor made of an FeRh AFM whose transition to a FM order 100 degrees above room-temperature, allows us to magnetically set different collective directions of Fe moments. Upon cooling to room-temperature, the AFM order sets in with the direction the AFM moments pre-determined by the field and moment direction in the high temperature FM state. For electrical reading, we use an antiferromagnetic analogue of the anisotropic magnetoresistance (AMR). We report microscopic theory modeling which confirms that this archetypical spintronic effect discovered more than 150 years ago in FMs, can be equally present in AFMs. Our work demonstrates the feasibility to realize room-temperature spintronic memories with AFMs which greatly expands the magnetic materials base for these devices and offers properties which are unparalleled in FMs.

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preprint2012arXiv

Half-metallicity and magnetism of GeTe doped with transition metals V, Cr and Mn: a theoretical study from the viewpoint of application in spintronics

This work presents results for the magnetic properties of the compound GeTe doped with 3d transition metals V, Cr and Mn from the viewpoint of potential application in spintronics. We report a systematic density-functional study of the electronic structure, magnetic and cohesive properties of these ternary compounds in both rock salt and zinc blende structures. In both cases, it is the Ge sublattice that is doped with the three transition metals. Some of these compounds are found to be half-metallic at their optimized cell volumes. For these particular cases, we calculate both exchange interactions and the Curie temperatures in order to provide some theoretical guidance to experimentalists trying to fabricate materials suitable for spintronic devices. Discussions relating our results to the existing experimental studies are provided whenever applicable and appropriate. Apparent discrepancy between experimental observations and our theoretical result for the case of Mn-doping is discussed in detail, pointing out various physical reasons and possible resolutions of the apparent discrepancy.

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preprint2012arXiv

Non-collinear magnetic ordering in compressed FePd$_3$ ordered alloy: a first principles study

By means of ab initio calculations based on the density functional theory we investigated magnetic phase diagram of ordered FePd$_3$ alloy as a function of external pressure. Considering several magnetic configurations we concluded that the system under pressure has a tendency to non-collinear spin alignment. Analysis of the Heisenberg exchange parameters $J_{ij}$ revealed strong dependence of iron-iron magnetic couplings on polarization of Pd atoms. To take into account the latter effect we built an extended Heisenberg model with higher order (biquadratic) terms. Minimizing the energy of this Hamiltonian, fully parameterized using the results of ab initio calculations, we found a candidate for a ground state of compressed FePd$_3$, which can be seen as two interpenetrating "triple-Q" phases.

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preprint2010arXiv

Exchange interactions and Curie temperatures in Cr-based alloys in Zinc Blende structure: volume- and composition-dependence from first-principles calculations

We present calculations of the exchange interactions and Curie temperatures in Cr-based pnictides and chalcogenides of the form CrX with X=As, Sb, S, Se and Te, and the mixed alloys CrAs$_{50}$X$_{50}$ with X=Sb, S, Se, and Te. The calculations are performed for Zinc Blende (ZB) structure for 12 values of the lattice parameter between 5.44 and 6.62 Å, appropriate for some typical II-VI and III-V semiconducting substrates. Electronic structure is calculated via the linear muffin-tin-orbitals (LMTO) method in the atomic sphere approximation (ASA), using empty spheres to optimize ASA-related errors. Whenever necessary, the results have been verified using the full-potential version of the method, FP-LMTO. The disorder effect in the As-sublattice for CrAs$_{50}$X$_{50}$ (X=Sb, S, Se, Te) alloys is taken into account via the coherent potential approximation (CPA). Exchange interactions are calculated using the linear response method for the ferromagnetic (FM) reference states of the alloys, as well as the disordered local moments (DLM) states. These results are then used to estimate the Curie temperature from the low and high temperature side of the ferromagnetic/paramagnetic transition. Estimates of the Curie temperature are provided, based on the mean field and the more accurate random phase approximations. Dominant antiferromagnetic exchange interactions for some low values of the lattice parameter for the FM reference states in CrS, CrSe and CrTe prompted us to look for antiferromagnetic (AFM) configurations for these systems with energies lower than the corresponding FM and DLM values. Results for a limited number of such AFM calculations are discussed, identifying the AFM[111] state as a likely candidate for the ground state for these cases.

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preprint2010arXiv

First principles theoretical studies of half-metallic ferromagnetism in CrTe

Using full-potential linear augmented plane wave method (FP-LAPW) and the density functional theory, we have carried out a systematic investigation of the electronic, magnetic, and cohesive properties of the chalcogenide CrTe in three competing structures: rock-salt (RS), zinc blende (ZB) and the NiAs-type (NA) hexagonal. Although the ground state is of NA structure, RS and ZB are interesting in that these fcc-based structures, which can possibly be grown on many semiconductor substrates, exhibit half-metallic phases above some critical values of the lattice parameter. We find that the NA structure is not half-metallic at its equilibrium volume, while both ZB and RS structures are. The RS structure is more stable than the ZB, with an energy that is lower by 0.25 eV/atom. While confirming previous results on the half-metallic phase in ZB structure, we provide hitherto unreported results on the half-metallic RS phase, with a gap in the minority channel and a magnetic moment of 4.0 $μ_{B}$ per formula unit. A comparison of total energies for the ferromagnetic (FM), non-magnetic (NM), and antiferromagnetic (AFM) configurations shows the lowest energy configuration to be FM for CrTe in all the three structures. The FP-LAPW calculations are supplemented by linear muffin-tin orbital (LMTO) calculations using both local density approximation (LDA) and LDA+U method. The exchange interactions and the Curie temperatures calculated via the linear response method in ZB and RS CrTe are compared over a wide range of the lattice parameter. The calculated Curie temperatures for the RS phase are consistently higher than those for the ZB phase.

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preprint2010arXiv

Magnetism of mixed quaternary Heusler alloys: (Ni,T)$_{2}$MnSn (T=Cu,Pd) as a case study

The electronic properties, exchange interactions, finite-temperature magnetism, and transport properties of random quaternary Heusler Ni$_{2}$MnSn alloys doped with Cu- and Pd-atoms are studied theoretically by means of {\it ab initio} calculations over the entire range of dopant concentrations. While the magnetic moments are only weakly dependent on the alloy composition, the Curie temperatures exhibit strongly non-linear behavior with respect to Cu-doping in contrast with an almost linear concentration dependence in the case of Pd-doping. The present parameter-free theory agrees qualitatively and also reasonably well quantitatively with the available experimental results. An analysis of exchange interactions is provided for a deeper understanding of the problem. The dopant atoms perturb electronic structure close to the Fermi energy only weakly and the residual resistivity thus obeys a simple Nordheim rule. The dominating contribution to the temperature-dependent resistivity is due to thermodynamical fluctuations originating from the spin-disorder, which, according to our calculations, can be described successfully via the disordered local moments model. Results based on this model agree fairly well with the measured values of spin-disorder induced resistivity.

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