Researcher profile

V. Bouchiat

V. Bouchiat contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2014arXiv

Electrical switch to the resonant magneto-phonon effect in graphene

We report a comprehensive study of the tuning with electric fields of the resonant magneto-exciton optical phonon coupling in gated graphene. For magnetic fields around $B \sim 25$ T which correspond to the range of the fundamental magneto-phonon resonance, the electron-phonon coupling can be switched on and off by tuning the position of the Fermi level in order to Pauli block the two fundamental inter Landau level excitations. The effects of such a profound change in the electronic excitation spectrum are traced through investigations of the optical phonon response in polarization resolved magneto-Raman scattering experiments. We report on the observation of a splitting of the phonon feature with satellite peaks developing, at particular values of the Landau level filling factor, on the low or on the high energy side of the phonon, depending on the relative energy of the discrete electronic excitation and of the optical phonon. Shifts of the phonon energy as large as $\pm60$ cm$^{-1}$ are observed close to the resonance. The intraband electronic excitation, the cyclotron resonance, is shown to play a relevant role in the observed spectral evolution of the phonon response.

preprint2010arXiv

Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon

The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent compatibility with silicon technology, could prove useful in nanoelectronic applications. Here we report the confinement of holes in quantum-dot devices made by directly contacting individual SiGe nanocrystals with aluminium electrodes, and the production of hybrid superconductorsemiconductor devices, such as resonant supercurrent transistors, when the dot is strongly coupled to the electrodes. Charge transport measurements on weakly coupled quantum dots reveal discrete energy spectra, with the confined hole states displaying anisotropic gyromagnetic factors and strong spin-orbit coupling strength with pronounced gate-voltage and magnetic-field dependence.

preprint2009arXiv

Tunable Superconducting Phase Transition in Metal-Decorated Graphene Sheets

Using typical experimental techniques it is difficult to separate the effects of carrier density and disorder on the superconducting transition in two dimensions. Using a simple fabrication procedure based on metal layer dewetting, we have produced graphene sheets decorated with a non-percolating network of nanoscale tin clusters. These metal clusters both efficiently dope the graphene substrate and induce long-range superconducting correlations. This allows us to study the superconducting transition at fixed disorder and variable carrier concentration. We find that despite structural inhomogeneity on mesoscopic length scales (10-100 nm), this material behaves electronically as a homogenous dirty superconductor. Our simple self-assembly method establishes graphene as an ideal tunable substrate for studying induced two-dimensional electronic systems at fixed disorder and our technique can readily be extended to other order parameters such as magnetism.