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D. Kalita

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hep-ex cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2024arXiv

Measurement of branching fractions and direct $CP$ asymmetries for $B \to Kπ$ and $B\toππ$ decays at Belle II

We report measurements of the branching fractions and direct $\it{CP}$ asymmetries of the decays $B^0 \to K^+ π^-$, $B^+ \to K^+ π^0$, $B^+ \to K^0 π^+$, and $B^0 \to K^0 π^0$, and use these for testing the standard model through an isospin-based sum rule. In addition, we measure the branching fraction and direct $\it{CP}$ asymmetry of the decay $B^+ \to π^+π^0$ and the branching fraction of the decay $B^0 \to π^+π^-$. The data are collected with the Belle II detector from $e^+e^-$ collisions at the $Υ(4S)$ resonance produced by the SuperKEKB asymmetric-energy collider and contain $387\times 10^6$ bottom-antibottom meson pairs. Signal yields are determined in two-dimensional fits to background-discriminating variables, and range from 500 to 3900 decays, depending on the channel. We obtain $-0.03 \pm 0.13 \pm 0.04$ for the sum rule, in agreement with the standard model expectation of zero and with a precision comparable to the best existing determinations.

preprint2023arXiv

Search for rare decays $B^{+} \to D_{s}^{(\ast)+}η$, $D_{s}^{(\ast)+}\bar{K}^{0}$, $D^{+}η$, and $D^{+}K^{0}$

We present a study of rare decay modes $B^{+} \to D_{s}^{+}h^{0}$, $B^{+} \to D_{s}^{\ast+}h^{0}$, and $B^{+} \to D^{+}h^{0}$, where $h^{0}$ denotes the neutral mesons $η$ or $K^{0}$, using a data sample of $(772 \pm 10 ) \times 10^{6}$ $B\bar{B}$ events produced at the $Υ(4S)$ resonance. The data were collected by the Belle detector operating at the asymmetric-energy KEKB collider. We observe no evidence for these decays, so we provide upper limits at the 90$\%$ confidence level on the branching fractions of $B^{+} \to D_{s}^{+}h^{0}$, $D_{s}^{\ast+}h^{0}$, and $D^{+}h^{0}$ decay modes. Along with rare decay modes, we report improved measurements of the color-suppressed decay branching fractions $\mathcal{B}(\bar{B}^{0} \to D^{0}η)$ = (26.6 $\pm$ 1.2 $\pm$ 2.1) $\times$ $10^{-5}$ and $\mathcal{B}(\bar{B}^{0} \to D^{0}\bar{K}^{0})$ = (5.6 $\pm$ 0.5 $\pm$ 0.2) $\times$ $10^{-5}$. The first and second uncertainties are statistical and systematic, respectively.

preprint2022arXiv

Search for the decay $B_s^0 \to η^\prime K_S^0$

We report the results of the first search for the decay $B_s^0 \to η^\prime K_S^0$ using $121.4\,{\rm fb}^{-1}$ of data collected at the $Υ(5S)$ resonance with the Belle detector at the KEKB asymmetric-energy $e^+ e^-$ collider. We observe no signal and set a 90\% confidence-level upper limit of $8.16 \times 10^{-6}$ on the $B_s^0 \to η^\prime K_S^0$ branching fraction.

preprint2016arXiv

Nanofaceting as a stamp for periodic graphene charge carrier modulations

The exceptional electronic properties of monoatomic thin graphene sheets triggered numerous original transport concepts, pushing quantum physics into the realm of device technology for electronics, optoelectronics and thermoelectrics. At the conceptual pivot point is the particular twodimensional massless Dirac fermion character of graphene charge carriers and its volitional modification by intrinsic or extrinsic means. Here, interfaces between different electronic and structural graphene modifications promise exciting physics and functionality, in particular when fabricated with atomic precision. In this study we show that quasiperiodic modulations of doping levels can be imprinted down to the nanoscale in monolayer graphene sheets. Vicinal copper surfaces allow to alternate graphene carrier densities by several 10^13 carriers per cm^2 along a specific copper high-symmetry direction. The process is triggered by a self-assembled copper faceting process during high-temperature graphene chemical vapor deposition, which defines interfaces between different graphene doping levels at the atomic level.

preprint2014arXiv

Interplay between Raman shift and thermal expansion in graphene: temperature-dependent measurements and analysis of substrate corrections

Measurements and calculations have shown significant disagreement regarding the sign and variations of the thermal expansion coefficient (TEC) of graphene $α(T)$. Here we report dedicated Raman scattering experiments conducted for graphene monolayers deposited on silicon nitride substrates and over the broad temperature range 150--900~K. The relation between those measurements for the G band and the graphene TEC, which involves correcting the measured signal for the mismatch contribution of the substrate, is analyzed based on various theoretical candidates for $α(T)$. Contrary to calculations in the quasiharmonic approximation, a many-body potential reparametrized for graphene correctly reproduces experimental data. These results indicate that the TEC is more likely to be positive above room temperature.